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STW20NK50Z, STW20NK70Z, STW20NM50

Table of contents:
Info of STW20NK50Z
Info of STW20NK70Z
Info of STW20NM50

STW20NK50Z, STW20NK70Z, STW20NM50 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:2009+ROHS D/C:06+

STW20NK50Z, STW20NK70Z, STW20NM50 Datasheet download

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Part Number: STW20NK50Z

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 2009+ROHS

D/C: 06+

Description: MOSFET N-CH 550V 20A TO-247

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STW20NK50Z Parameters

Technical/Catalog Information	STW20NK50Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	270 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	119nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NK50Z STW20NK50Z 497 3261 5 ND 49732615ND 497-3261-5

STW20NK50Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STW20NK50Z Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP10NK80Z	STP10NK80ZFP
V_DS	Drain-source Voltage (V_GS= 0)	500		V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	500		V
V_GS	Gate-Source Voltage	± 30		V
I_D	Drain Current (continuous) at T_c = 25	20	20 (*)	A
I_D	Drain Current (continuous) at T_c= 100	10	10 (*)	A
I_DM(`)	Drain Current (pulsed)	64	64 (*)	A
P_TOT	Total Dissipation at T_c= 25	190	190	W
	Derating Factor	1.51	1.51	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	2500		V
Tstg	Storage Temperature	-55 to 150
Tj	Operating Junction Temperature	-55 to 150

(•)Pulse width limited by safe operating area (1)ISD0.3A, di/dt100A/µs, V_DD0V(BR)DSS, Tj0 TJMAX
(*) Limited only by maximum temperature allowed

STW20NK50Z Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

STW20NK70Z Parameters

Technical/Catalog Information	STW20NK70Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	700V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	285 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	350W
Packaging	Tube
Gate Charge (Qg) @ Vgs	185nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NK70Z STW20NK70Z 497 3559 5 ND 49735595ND 497-3559-5

STW20NK70Z General Description

STW20NK70Z Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	700	V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	700	V
V_GS	Gate- source Voltage	±30	V
I_D	Drain Current (continuos) at T_C = 25	20	A
I_D	Drain Current (continuos) at T_C = 100	12	A
I_DM ^(`)	Drain Current (pulsed)	80	A
P_tot	Total Dissipation at T_C = 25	300	W
	Derating Factor	2.4	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	TBD	V
dv/dt ⁽¹⁾	Peak Diode Recovery voltage slope	TBD	V/ns
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 17A, di/dt TBDA/µs, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed

STW20NK70Z Features

` TYPICAL R_DS(on) = 0.25
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY

STW20NK70Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES

STW20NM50 Parameters

Technical/Catalog Information	STW20NM50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1480pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NM50 STW20NM50 497 3262 5 ND 49732625ND 497-3262-5

STW20NM50 General Description

The STW20NM50 is a kind of N-channel MDmesh™ power MOSFET. The MDmesh™ is a revolutionary MOSFET technology integrating the Multiple Drain process with the PowerMESH™ horizontal layout. It is designed for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

There are some features as follows: (1) typical RDS(on)=0.20; (2) high dv/dt and avalanche capabilities; (3) 100% avalanche tested; (4) low input capacitance and gate charge; (5) low gate input resistance; (6) tight process control and high manufacturing yields.

What comes next is about the absolute maximum ratings. (1): VDS (drain-source voltage (VGS=0)) is 500 V; (2): VDGR (drain-gate voltage (RGS=20 k)) is 500 V; (3): VGS (gate-source voltage) is ±30 V; (4): ID (drain current (continuous) at TC=25) is 20 A; (5): ID (drain current (continuous) at TC=100) is 12.6 A; (6): IDM (drain current (pulsed)) is 80 A; (7): PTOT (total dissipation at TC=25) is 214 W; (8): dv/dt (peak diode recovery voltage slope) is 15 V/ns; (9): Tstg (storage temperature range) is from -65 to 150; (10): Tj (maximum operating junction temperature) is 150.

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