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STW20NM50FD, STW20NM60, STW20NM60FD

Table of contents:
Info of STW20NM50FD
Info of STW20NM60
Info of STW20NM60FD

STW20NM50FD, STW20NM60, STW20NM60FD Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 247 D/C:08+/09+

STW20NM50FD, STW20NM60, STW20NM60FD Datasheet download

Five Points

Part Number: STW20NM50FD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 247

D/C: 08+/09+

Description: MOSFET N-CH 600V 20A TO-247

Price Break

1
10
100
250
500
1000
2500

Unit Price

6.50000
6.25000
4.75000
4.00000
3.50000
3.32500
3.18750

Extended Price

6.50
62.50
475.00
1000.00
1750.00
3325.00
7968.75

(All prices are in USD) Prices for reference only

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STW20NM50FD Parameters

Technical/Catalog Information	STW20NM50FD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1380pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NM50FD STW20NM50FD 497 2717 5 ND 49727175ND 497-2717-5

STW20NM50FD General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.

STW20NM50FD Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	500	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	500	V
V_GS	Gate-Source Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25	20	A
I_D	Drain Current (continuous) at T_c = 100	14	A
I_DM(`)	Drain Current (pulsed)	80	A
P_TOT	Total Dissipation at T_c = 25	214	W
	Derating Factor	1.42	W/
dv/dt(1)	Peak Diode Recovery voltage slope	20	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area (1) I_SD 14 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX

(*)Limited only by maximum temperature allowed

STW20NM50FD Typical Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

STW20NM60 Parameters

Technical/Catalog Information	STW20NM60
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	290 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	192W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NM60 STW20NM60 497 3263 5 ND 49732635ND 497-3263-5

STW20NM60 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

STW20NM60 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	600	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	20	A
I_D	Drain Current (continuous) at T_c = 100	12.6	A
I_DM(•)	Drain Current (pulsed)	80	A
P_TOT	Total Dissipation at T_c = 25	214	W
	Derating Factor	1.44	W/
dv/dt(1)	Peak Diode Recovery voltage slope	15	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area

STW20NM60 Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

STW20NM60FD Parameters

Technical/Catalog Information	STW20NM60FD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	290 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	37nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW20NM60FD STW20NM60FD 497 5415 5 ND 49754155ND 497-5415-5

STW20NM60FD General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

STW20NM60FD Maximum Ratings

Symbol	Parameter	Value			Unit
		STP20NM60FD	STF20NM60D	STW20NM60FD
V_CES	Collector-Emitter Voltage (V_GS= 0)	600			V
V_ECR	Drain-gate Voltage (R_GS = 20 kW)	600			V
V_GE	Gate-Emitter Voltage	± 30			V
I_C	Collector Current (continuous) at T_C = 25°C	20	20 (*)	20	A
I_C	Collector Current (continuous) at T_C = 125°C	12.6	12.6 (*)	12.6	A
I_CM(•)	Collector Current (pulsed)	80	80 (*)	80	A
P_tot	Total Dissipation at T_c= 25 ^oC	192	45	214	W
	Derating Factor	1.20	0.36	1.42	W/^oC
d_{v/dt (1)}	Peak Diode Recovery voltage slope	20			V/ns
V_ISO	Insulation Withstand Voltage (DC)	--	2500	--	V
T_j T_stg	Storage Temperature Operating Junction Temperature	65 to 150			^oC

STW20NM60FD Features

TYPICAL RDS(on) = 0.26W
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

STW20NM60FD Typical Application

ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

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