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STW22NM60, STW25NM50N, STW25NM60N

Table of contents:
Info of STW22NM60
Info of STW25NM50N
Info of STW25NM60N

STW22NM60, STW25NM50N, STW25NM60N Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:9800 D/C:TO

STW22NM60, STW25NM50N, STW25NM60N Datasheet download

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Part Number: STW25NM50N

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 9800

D/C: TO

Description: MOSFET N-CH 600V 21A TO-247

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STW22NM60 General Description

This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall performances that are significantly better than that of similar competition's products.

STW22NM60 Maximum Ratings

Symbol	Parameter	Value			Unit
Symbol	Parameter	STP22NM60 STB22NM60/1	STF22NM60	STW22NM60	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600			V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600			V
V_GS	Gate- source Voltage	± 30			V
I_D	Drain Current (continuos) at T_C = 25	22	22(^*)	22	A
I_D	Drain Current (continuos) at T_C = 100	12.6	12.6^(*)	12.6	A
I_DM()	Drain Current (pulsed)	80	80(^*)	80	A
P_TOT	Total Dissipation at T_C = 25	192	45	210	W
	Derating Factor	1.2	0.36	1.2	W/
dv/dt (1)	Peak Diode Recovery voltage slope	15			V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	-	V
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

() Pulse width limited by safe operating area;
(*)Limited only by maximum temperature allowed
(1) I_SD22A, di/dt400A/s, V_DD V_(BR)DSS, T_j T_JMAX

STW22NM60 Features

` TYPICAL R_DS(on) = 0.19
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE

STW22NM60 Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

STW25NM50N Parameters

Technical/Catalog Information	STW25NM50N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	140 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	2565pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	84nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW25NM50N STW25NM50N 497 4675 5 ND 49746755ND 497-4675-5

STW25NM50N General Description

The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STW25NM50N Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	TO- 220/D²PAK/ I²PAK/TO-247	TO-220FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	500		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	500		V
V_GS	Gate- source Voltage	± 25		V
I_D	Drain Current (continuos) at T_C = 25	22	22(*)	A
I_D	Drain Current (continuos) at T_C = 100	14	14(*)	A
I_DM()	Drain Current (pulsed)	88	88(*)	A
P_TOT	Total Dissipation at T_C = 25	160	40	W
	Derating Factor	1.28	0.32	W/
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
T_stg	Storage Temperature	55 to 150
T_j	Max. Operating Junction Temperature	150

() Pulse width limited by safe operating area
(1) I_SD22A, di/dt 400A/s, V_DD 80% V_(BR)DSS.
(*) Limited only by maximum temperature allowed

STW25NM50N Features

· HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE

STW25NM50N Typical Application

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system iniaturization and higher efficiencies.

STW25NM60N Parameters

Technical/Catalog Information	STW25NM60N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	160 mOhm @ 10.5A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 50V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	84nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW25NM60N STW25NM60N 497 5025 5 ND 49750255ND 497-5025-5

STW25NM60N General Description

The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

STW25NM60N Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	TO-220/I²PAK TO-247/D²PAK	TO-220FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600		V
V_GS	Gate- source Voltage	±25		V
I_D	Drain Current (continuos) at T_C = 25	20	20(*)	A
I_D	Drain Current (continuos) at T_C = 100	12.8	12.8(*)	A
I_DM(1)	Drain Current (pulsed)	80	80(*)	A
P_TOT	Total Dissipation at T_C = 25	160	40	W
	Derating Factor	1.28	0.32	W/
dv/dt (2)	Peak Diode Recovery voltage slope	TBD		V/ns
T_stg	Storage Temperature	55 to 150
T_j	Max. Operating Junction Temperature	150

(*) Limited only by maximum temperature allowed
(1) Pulse width limited by safe operating area
(2) I_SD 20 A, di/dt 400 A/s, V_DD =80%V_(BR)DSS.

STW25NM60N Features

` WORLD'S LOWEST ON RESISTANCE
` TYPICAL R_DS(on) = 0.140
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE

STW25NM60N Typical Application

The MDmesh™ II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies .

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