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STW26NM50, STW26NM60, STW28NK60Z

Table of contents:
Info of STW26NM50
Info of STW26NM60
Info of STW28NK60Z

STW26NM50, STW26NM60, STW28NK60Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:02+ D/C:1500

STW26NM50, STW26NM60, STW28NK60Z Datasheet download

Five Points

Part Number: STW26NM50

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 02+

D/C: 1500

Description: MOSFET N-CH 600V 27A TO-247

Price Break

1
10
100
250
500
1000
2500

Unit Price

10.40000
10.00000
7.60000
6.40000
5.60000
5.32000
5.10000

Extended Price

10.40
100.00
760.00
1600.00
2800.00
5320.00
12750.00

(All prices are in USD) Prices for reference only

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STW26NM50 Parameters

Technical/Catalog Information	STW26NM50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	120 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	313W
Packaging	Tube
Gate Charge (Qg) @ Vgs	106nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW26NM50 STW26NM50 497 3264 5 ND 49732645ND 497-3264-5

STW26NM50 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip echnique yields overall dynamic performance that is significantly better than that of similar competition's products.

STW26NM50 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	500	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	500	V
V_GS	Gate-Source Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25	30	A
I_D	Drain Current (continuous) at T_c = 100	18.9	A
I_DM(`)	Drain Current (pulsed)	120	A
P_TOT	Total Dissipation at T_c = 25	313	W
	Derating Factor	2.5	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	6000	V
dv/dt(1)	Peak Diode Recovery voltage slope	15	V/ns
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area (1) I_SD 14 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX

STW26NM50 Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STW26NM50 Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

STW26NM60 Parameters

Technical/Catalog Information	STW26NM60
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	135 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	313W
Packaging	Tube
Gate Charge (Qg) @ Vgs	102nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW26NM60 STW26NM60 497 3265 5 ND 49732655ND 497-3265-5

STW26NM60 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

STW26NM60 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	600	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	30	A
I_D	Drain Current (continuous) at T_c = 100	18.9	A
I_DM(.)	Drain Current (pulsed)	120	A
P_TOT	Total Dissipation at T_c = 25	313	W
	Derating Factor	2.5	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	6000	V
dv/dt(1)	Peak Diode Recovery voltage slope	15	V/ns
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

(•)Pulse width limited by safe operating area
(1)I_SD 26A, di/dt 200A/µs, V_DD V_(BR)DSS, T_j T_JMAX.

STW26NM60 Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

STW28NK60Z Parameters

Technical/Catalog Information	STW28NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	185 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds	6350pF @ 25V
Power - Max	350W
Packaging	Tube
Gate Charge (Qg) @ Vgs	264nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW28NK60Z STW28NK60Z 497 4424 5 ND 49744245ND 497-4424-5

STW28NK60Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MSmesh™ products.

STW28NK60Z Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain-gate Voltage (R_GS = 20 K)	600	V
V_GS	Gate- source Voltage	±30	V
I_D	Drain Current (continuous) at T_C = 25°C	27	A
I_D	Drain Current (continuous) at T_C= 100°C	17	A
I_DM*	Drain Current (pulsed)	108	A
P_TOT	Total Dissipation at T_C = 25°C	350	W
	Derating Factor	2.77	W/°C
V_ESD(G-S)	Gate source ESD (HBM-C = 100pF, R = 1.5 K)	6000	V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg Tj	Storage Temperature Operating Junction Temperature	-55 to 150	°C

(*) Pulse width limited by safe operating area
(1) I_SD 27 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_J T_JMAX

STW28NK60Z Features

` TYPICAL RDS(on) = 0.155
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY

STW28NK60Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES
· WELDING MACHINES
· LIGHTING

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