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STW30NM60D, STW33N20, STW34NB20

Table of contents:
Info of STW30NM60D
Info of STW33N20
Info of STW34NB20

STW30NM60D, STW33N20, STW34NB20 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 247 D/C:TO

STW30NM60D, STW33N20, STW34NB20 Datasheet download

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Part Number: STW30NM60D

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 247

D/C: TO

Description: MOSFET N-CH 200V 34A TO-247

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STW30NM60D Parameters

Technical/Catalog Information	STW30NM60D
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	145 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	2520pF @ 25V
Power - Max	312W
Packaging	Tube
Gate Charge (Qg) @ Vgs	115nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW30NM60D STW30NM60D 497 4426 5 ND 49744265ND 497-4426-5

STW30NM60D General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

STW30NM60D Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	600	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	30	A
I_D	Drain Current (continuous) at T_c = 100	18.9	A
I_DM(.)	Drain Current (pulsed)	120	A
P_TOT	Total Dissipation at T_c = 25	312	W
	Derating Factor	2.5	W/
dv/dt(1)	Peak Diode Recovery voltage slope	20	V/ns
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(. ) Pulse width limited by safe operating area
(1) I_SD 30A, di/dt 400A/µs, V_DD V_(BR)DSS, T_j T_JMAX.

STW30NM60D Features

· TYPICAL R_DS(on) = 0.125 Ω
· HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE RATED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE
· FAST INTERNAL RECOVERY DIODE

STW30NM60D Typical Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

STW34NB20 Parameters

Technical/Catalog Information	STW34NB20
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	75 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW34NB20 STW34NB20 497 2659 5 ND 49726595ND 497-2659-5

STW34NB20 General Description

Using the latest high voltage MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STW34NB20 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	200	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	200	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25 oC	34	A
I_D	Drain Current (continuous) at T_c = 100	21	A
I_DM(•)	Drain Current (pulsed)	136	A
P_tot	Total Dissipation at T_c = 25 oC	180	W
	Derating Factor	1.44	W/
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

STW34NB20 Typical Application

·SWITCH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
·HIGH CURRENT, HIGH SPEED SWITCHING

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