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STW50N10, STW50NB20, STW52NK25Z

Table of contents:
Info of STW50N10
Info of STW50NB20
Info of STW52NK25Z

STW50N10, STW50NB20, STW52NK25Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:00(hot sell))

STW50N10, STW50NB20, STW52NK25Z Datasheet download

Five Points

Part Number: STW50NB20

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-247

D/C: 00(hot sell))

Description: MOSFET N-CH 250V 52A TO-247

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STW50N10 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	100	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	100	V
V_GS	Gate-source Voltage	±20	V
I_D	Drain Current (continuous) at T_c= 25 oC	50	A
I_D	Drain Current (continuous) at T_c = 100 oC	35	A
I_DM(•)	Drain Current (pulsed)	200	A
P_tot	Total Dissipation at T_c = 25 oC	180	W
	Derating Factor	1.2	W/
T_stg	Storage Temperature	-65 to 175
T_j	Max. Operating Junction Temperature	175

STW50N10 Typical Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·POWER MOTOR CONTROL
·DC-DC & DC-AC CONVERTERS
·SYNCRONOUS RECTIFICATION

STW50NB20 Parameters

Technical/Catalog Information	STW50NB20
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	55 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	3400pF @ 25V
Power - Max	280W
Packaging	Tube
Gate Charge (Qg) @ Vgs	115nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STW50NB20 STW50NB20 497 2670 5 ND 49726705ND 497-2670-5

STW50NB20 General Description

Using the latest high voltage technology,STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STW50NB20 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	200	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	200	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	50	A
I_D	Drain Current (continuous) at T_c = 100	32	A
I_DM(•)	Drain Current (pulsed)	200	A
P_TOT	Total Dissipation at T_c = 25	280	W
	Derating Factor	2.24	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD50A, di/dt 200A/µs, V_DD V_(BR)DSS, T_jT_JMAX.

STW50NB20 Typical Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITCH MODE POWER SUPPLIES(SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

STW52NK25Z Parameters

Technical/Catalog Information	STW52NK25Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	45 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	4850pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	160nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW52NK25Z STW52NK25Z 497 4428 5 ND 49744285ND 497-4428-5

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