STW55NE10, STW5NA100, STW5NA90 Selling Leads, Datasheet
MFG:TO-3P Package Cooled:ST D/C:dc99
STW55NE10, STW5NA100, STW5NA90 Datasheet download
Part Number: STW55NE10
MFG: TO-3P
Package Cooled: ST
D/C: dc99
MFG:TO-3P Package Cooled:ST D/C:dc99
STW55NE10, STW5NA100, STW5NA90 Datasheet download
MFG: TO-3P
Package Cooled: ST
D/C: dc99
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PDF/DataSheet Download
Datasheet: STW55NE10
File Size: 88515 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW5NA100
File Size: 101543 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW5NA90
File Size: 56169 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
100 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 | V |
VGS |
Gate-source Voltage |
±20 | V |
ID |
Drain Current (continuous) at Tc = 25 |
55 | A |
ID |
Drain Current (continuous) at Tc = 100 |
35 | A |
IDM(.) |
Drain Current (pulsed) |
220 | A |
PTOT |
Total Dissipation at Tc = 25 |
180 | W |
Derating Factor |
1.2 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
9 |
V/ns |
Tstg |
Storage Temperature |
-65 to 175 | |
Tj |
Max. Operating Junction Temperature |
175 |
Symbol |
Parameter |
Value |
Unit | |
STW5NA100 |
STH5NA100FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
1000 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
1000 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
4.6 |
2.9 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
2.9 |
1.8 |
A |
IDM () |
Drain Current (pulsed) | 18.4 |
18.4 |
A |
PTOT |
Total Dissipation at TC = 25°C |
150 |
60 |
W |
Derating Factor |
1.2 |
0.48 |
W/°C | |
VISO |
Insulation Withstand Voltage (DC) |
- |
4000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
Symbol |
Parameter |
Value |
Unit | |
STW5NA90 |
STH5NA90FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
900 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
900 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
5.3 |
3.5 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
3.4 |
2.2 |
A |
IDM () |
Drain Current (pulsed) | 21.2 |
21.2 |
A |
PTOT |
Total Dissipation at TC = 25°C |
150 |
60 |
W |
Derating Factor |
1.2 |
0.48 |
W/°C | |
VISO |
Insulation Withstand Voltage (DC) |
- |
4000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |