MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:TO
STW5NB100, STW5NB90, STW5NK100Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-247
D/C: TO
Description: MOSFET N-CH 1000V 3.5A TO-247
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PDF/DataSheet Download
Datasheet: STW5NB100
File Size: 55542 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW5NB90
File Size: 87366 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW5NK100Z
File Size: 393460 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
1000 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
1000 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
4.3 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
2.7 | A |
| IDM(•) |
Drain Current (pulsed) |
17 | A |
| PTOT |
Total Dissipation at Tc = 25 |
160 | W |
|
Derating Factor |
1.28 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
| Technical/Catalog Information | STW5NK100Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 3.5A |
| Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 1.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1154pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW5NK100Z STW5NK100Z 497 7623 5 ND 49776235ND 497-7623-5 |
The SuperMESHTM series is obtained through an extreme optimization of ST's well establishe stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmeshTM products.
| Symbol | Parameter | Value | Unit | |
| STP5NK100Z STW5NK100Z |
STF5NK100Z | |||
| VDS | Drain-source Voltage (VGS = 0) |
1000 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 ) |
1000 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25 |
3.5 | 3.5(*) | A |
| ID | Drain Current (continuous) at TC = 100 | 2.2 | 2.2(*) | A |
| IDM(`) | Drain Current (pulsed) | 15 | 14(*) | A |
| PTOT | Total Dissipation at TC = 25 |
125 | 30 | W |
| Derating Factor | 1 | 0.24 | W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) | 4000 | V | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | |
| VISO | Insulation Withstand Voltage (DC) | 2500 | V | |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
||
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