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STW60N10, STW60N10FI, STW60NE10

Table of contents:
Info of STW60N10
Info of STW60N10FI
Info of STW60NE10

STW60N10, STW60N10FI, STW60NE10 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:05+

STW60N10, STW60N10FI, STW60NE10 Datasheet download

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Part Number: STW60NE10

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-3P

D/C: 05+

Description: MOSFET N-CH 100V 60A TO-247

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STW60N10 Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STH/STW60N10	STH60N10FI	Unit
V_DS	Drain-source Voltage (V_GS= 0)	100		V
V_DGR	Drain-gate Voltage (R_GS= 20 kW)	100		V
V_GS	Gate- source Voltage	±20		V
I_D	Drain Current (continuos) at T_C = 25°C	60	36	A
I_D	Drain Current (continuos) at T_C = 100°C	42	22	A
I_{DM ()}	Drain Current (pulsed)	240	240	A
P_TOT	Total Dissipation at T_C= 25°C	200	70	W
	Derating Factor	1.33	0.56	W/°C
V_ISO	Insulation Withstand Voltage (DC)	-	4000	V
T_stg	Storage Temperature	65 to 150		°C
T_j	Max. Operating Junction Temperature	150		°C

STW60N10 Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)

STW60N10 Connection Diagram

STW60NE10 Parameters

Technical/Catalog Information	STW60NE10
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	22 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5300pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	185nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STW60NE10 STW60NE10 497 2643 5 ND 49726435ND 497-2643-5

STW60NE10 General Description

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size^TM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STW60NE10 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	100	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	100	V
V_GS	Gate-source Voltage	±20	V
I_D	Drain Current (continuous) at T_c= 25	60	A
I_D	Drain Current (continuous) at T_c = 100	42	A
I_DM^(.)	Drain Current (pulsed)	240	A
P_TOT	Total Dissipation at T_c = 25	180	W
	Derating Factor	1.2	W/
dv/dt(1)	Peak Diode Recovery voltage slope	9	V/ns
T_stg	Storage Temperature	-65 to 175
T_j	Max. Operating Junction Temperature	175

(•)Pulse width limited by safe operating area
(1)I_SD 60, di/dt 200A/µs, V_DD V_(BR)DSS, T_jT_JMAX.

STW60NE10 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)

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