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STW7NC80Z, STW7NC90Z, STW7NK90Z

Table of contents:
Info of STW7NC80Z
Info of STW7NC90Z
Info of STW7NK90Z

STW7NC80Z, STW7NC90Z, STW7NK90Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:00(hot sell))

STW7NC80Z, STW7NC90Z, STW7NK90Z Datasheet download

Five Points

Part Number: STW7NK90Z

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 09+

D/C: 00(hot sell))

Description: MOSFET N-CH 900V 5.8A TO-247

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STW7NC80Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

STW7NC80Z Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	800	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	800	V
V_GS	Gate-source Voltage	±25	V
I_D	Drain Current (continuous) at T_c= 25	6	A
I_D	Drain Current (continuous) at T_c = 100	3.8	A
I_DM(•)	Drain Current (pulsed)	24	A
P_TOT	Total Dissipation at T_c = 25	160	W
P_TOT	Derating Factor	1.28	W/
I_GS	Gate-source Current (*)	±50	mA
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=15K)	3	KV
dv/dt(1)	Peak Diode Recovery voltage slope	3	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 6A, di/dt 100A/µs, V_DD V_(BR)DSS, T_j T_JMAX.

STW7NC80Z Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STW7NC80Z Typical Application

· SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT

STW7NK90Z Parameters

Technical/Catalog Information	STW7NK90Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	2 Ohm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60.5nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW7NK90Z STW7NK90Z 497 7624 5 ND 49776245ND 497-7624-5

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