MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:9800 D/C:TO
STW80NE06-10, STW80NF06, STW80NF10 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 9800
D/C: TO
Description: MOSFET N-CH 60V 80A TO-247
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PDF/DataSheet Download
Datasheet: STW80NE06-10
File Size: 84470 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STW80NF06
File Size: 231049 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW80NF10
File Size: 257916 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STW80NF06 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 3850pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW80NF06 STW80NF06 497 3266 5 ND 49732665ND 497-3266-5 |
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
| VGS |
Gate-source Voltage |
± 20 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
80 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
80 |
A |
| IDM(•) |
Drain Current (pulsed) |
320 |
A |
| Ptot |
l Dissipation at Tc = 25 |
300 |
W |
|
Derating Factor |
2 |
W/oC | |
| EAS (1) |
Single Pulse Avalanche Energy |
870 |
mJ |
| Tstg |
Storage Temperature |
-65 to 175 |
oC |
| Tj |
Max. Operating Junction Temperature |
175 |
oC |
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
100 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 | V |
| VGS |
Gate-source Voltage |
±20 | V |
| ID(*) |
Drain Current (continuous) at Tc = 25 |
80 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
50 | A |
| IDM(•) |
Drain Current (pulsed) |
320 | A |
| Ptot |
Total Dissipation at Tc = 25 |
300 | W |
|
Derating Factor |
2 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
9 |
V/ns |
|
EAS (2) |
Single Pulse Avalanche Energy |
245 |
mJ |
| Tstg |
Storage Temperature |
-65 to 175 | |
| Tj |
Max. Operating Junction Temperature |
175 |
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