STW80NF12, STW80NF55, STW80NF55-06 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
STW80NF12, STW80NF55, STW80NF55-06 Datasheet download
Part Number: STW80NF12
MFG: ST
Package Cooled: 09+
D/C: TO
STW80NF12, STW80NF55, STW80NF55-06
- Table of contents:
Info of STW80NF12
Info of STW80NF55
Info of STW80NF55-06
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About STW80NF12
PDF/DataSheet Download
Datasheet: STW80NF12
File Size: 513597 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STW80NF55-06
PDF/DataSheet Download
Datasheet: STW80NF55-06
File Size: 117037 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STW80NF55-06
PDF/DataSheet Download
Datasheet: STW80NF55-06
File Size: 117037 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STW80NF12 General Description
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency,high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
STW80NF12 Maximum Ratings
| Symbol | Parameter | Value | Unit | |
| STB_P_W80NF12 | STP80NF12FP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
120 | V | |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
120 | V | |
| VGS |
Gate-source Voltage |
±20 | V | |
| ID(*) |
Drain Current (continuous) at Tc = 25 |
80 | 80(#) | A |
| ID |
Drain Current (continuous) at Tc = 100 |
60 | 60(#) | A |
| IDM(•) |
Drain Current (pulsed) |
320 | 320(#) | A |
| Ptot |
Total Dissipation at Tc = 25 |
300 | 45 | W |
|
Derating Factor |
2.0 | 0.3 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
10 |
V/ns | |
|
EAS (2) |
Single Pulse Avalanche Energy |
700 |
mJ | |
|
VISO |
Insulation Withstand Voltage (DC) |
------ |
2500 |
V |
| Tstg |
Storage Temperature |
-55 to 175 | ||
| Tj |
Max. Operating Junction Temperature | |||
STW80NF12 Typical Application
· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL
· UPS AND MOTOR CONTROL
STW80NF55-06 General Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STW80NF55-06 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
55 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
55 | V |
| VGS |
Gate-source Voltage |
±20 | V |
| ID (*) |
Drain Current (continuous) at Tc = 25 |
80 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
80 | A |
| IDM(•) |
Drain Current (pulsed) |
320 | A |
| PToT |
Total Dissipation at Tc = 25 |
300 | W |
|
Derating Factor |
2 | W/ | |
|
EAS (1) |
Single Pulse Avalanche Energy |
1 |
J |
| Tstg |
Storage Temperature |
-65 to 175 | |
| Tj |
Max. Operating Junction Temperature |
STW80NF55-06 Typical Application
·DC-AC & DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT
·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·AUTOMOTIVE ENVIRONMENT
·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
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