Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STW80NF55-08 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain- gate Voltage (RGS = 20 k)
55
V
VGS
Gate-source Voltage
±20
V
ID(*)
Drain Current (continuous) at Tc = 25
80
A
ID
Drain Current (continuous) at Tc = 100
80
A
IDM(.)
Drain Current (pulsed)
320
A
PTOT
Total Dissipation at Tc = 25
300
W
Derating Factor
2
W/
EAS (1)
Single Pulse Avalanche Energy
870
mJ
Tstg
Storage Temperature
-65 to 175
Tj
Max. Operating Junction Temperature
175
(•)Pulse width limited by safe operating area (1) Starting Tj = 25°C, ID = 40A, VDD = 40V (*) Current Limited by wire bonding
STW80NF55-08 Typical Application
· DC-AC & DC-DC CONVERTERS · HIGH CURRENT, HIGH SPEED SWITCHING · SOLENOID AND RELAY DRIVERS · MOTOR CONTROL, AUDIO AMPLIFIERS