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STW9N150, STW9N90Z, STW9NC80ZF1

STW9N150, STW9N90Z, STW9NC80ZF1 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:TO-247  D/C:06+

STW9N150 Picture

STW9N150, STW9N90Z, STW9NC80ZF1 Datasheet download

Five Points

Part Number: STW9N150

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-247

D/C: 06+

Description: MOSFET N-CH 1500V 8A TO-247

 

 
 
 
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STW9N150 Suppliers

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  • STW10NK80Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NK90Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NM80

  • Vendor: ST D/C: 07+&   Adddate: 2024-05-01
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About STW10NA50

PDF/DataSheet Download

Datasheet: STW10NA50

File Size: 248884 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Download : Click here to Download

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STW9N90Z Suppliers

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  • STW10NK80Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NK90Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)

About STW10NA50

PDF/DataSheet Download

Datasheet: STW10NA50

File Size: 248884 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Download : Click here to Download

Related PDF Download

Related Part Number

STW9NC80ZF1 Suppliers

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  • STW10NK80Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NK90Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NM80

  • Vendor: ST D/C: 07+&   Adddate: 2024-05-01
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About STW10NA50

PDF/DataSheet Download

Datasheet: STW10NA50

File Size: 248884 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Download : Click here to Download

Related PDF Download

Related Part Number

STW9N150 Parameters

Technical/Catalog InformationSTW9N150
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1500V (1.5kV)
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs2.5 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 3255pF @ 25V
Power - Max320W
PackagingTube
Gate Charge (Qg) @ Vgs89.3nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW9N150
STW9N150
497 8465 5 ND
49784655ND
497-8465-5

STW9N150 General Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

STW9N150 Maximum Ratings

Symbol
Parameter
Value
Unit
VDS
VGS
ID
ID
IDM(1)
PTOT

Tj
Tstg
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor

Operating junction temperature
Storage temperature
1500
± 30
8
5
32
350
0.37

55 to 150
V
V
A
A
A
W
W/°C

°C

STW9N150 Features

100% avalanche tested
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching
Very low on-resistance

STW9N150 Typical Application

Switching application

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