STW9NA60, STW9NA80, STW9NB80 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
STW9NA60, STW9NA80, STW9NB80 Datasheet download
Part Number: STW9NA60
MFG: ST
Package Cooled: 09+
D/C: TO
MFG:ST Package Cooled:09+ D/C:TO
STW9NA60, STW9NA80, STW9NB80 Datasheet download
MFG: ST
Package Cooled: 09+
D/C: TO
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PDF/DataSheet Download
Datasheet: STW9NA60
File Size: 126209 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW9NA80
File Size: 135293 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW9NB80
File Size: 88555 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Symbol |
Parameter |
Value |
Unit | |
STW9NA60 |
STH9NA60FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
600 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
6.4 |
9.5 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
4 |
6 |
A |
IDM () |
Drain Current (pulsed) | 38 |
38 |
A |
PTOT |
Total Dissipation at TC = 25°C |
70 |
160 |
W |
Derating Factor |
0.56 |
1.28 |
W/°C | |
VISO |
Insulation Withstand Voltage (DC) |
- |
4000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
Symbol |
Parameter |
Value |
Unit | |
STW9NA80 |
STH9NA80FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
800 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
9.1 |
5.9 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
6 |
3.9 |
A |
IDM () |
Drain Current (pulsed) |
36.4 |
36.4 |
A |
PTOT |
Total Dissipation at TC = 25°C |
190 |
80 |
W |
Derating Factor |
1.52 |
0.64 |
W/°C | |
VISO |
Insulation Withstand Voltage (DC) |
- |
4000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND
UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
800 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 | V |
VGS |
Gate-source Voltage |
±30 | V |
ID |
Drain Current (continuous) at Tc = 25 |
9.3 | A |
ID |
Drain Current (continuous) at Tc = 100 |
5.8 | A |
IDM(•) |
Drain Current (pulsed) |
37 | A |
PTOT |
Total Dissipation at Tc = 25 |
190 | W |
Derating Factor |
1.52 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
Tstg |
Storage Temperature |
-65 to 150 | |
Tj |
Max. Operating Junction Temperature |
150 |