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Mfg: Pack:97 D/C:SOT-252 Vendor:Other Category:Other
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·The 17-215 SMD Taping is much smaller than lead frame type components, thus enable smaller board size, higher packing density, reduced storage space and finally smaller equipment to be obtained.·Besides, lightweight mak...
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The Hamamatsu C4187 is a framing streak camera specially designed for the observation and analysis of ultra-fast optical phenomena. The interchangeable plug-in units give easy access to two types of imaging operations: F...
Mfg:ANAREN Pack:N/A D/C:N/A Vendor:Other Category:Other
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Single and dual bridge compression load cells C3P1, C3P2
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High efficiency (low DCR) choke coil C3-K for batterydriven portable electronic equipment power supplies (DC-DC converter, switching power supply) and other electronic equipment.
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Mfg:FUJI Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Photon counting units C3866 are designed to convert single photoelectron pulses from a photomultiplier tube into 5 V digital signals by use of the built-in amplifier and discriminator circuits. Photon counting with a hig...
Mfg:SANKEN Pack:TO-3P Vendor:Other Category:Other
The C3830 is a bench-top type multipurpose power supply incorporating a high voltage power supply. C3830 provides maximum output of -1.5 kV for a photomultiplier tube and constant voltage power supplies that provide ±5 V...
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Hamamatsu C3704 series UV TRON driving circuits are low current consuming, signal processing circuits for the UV TRON, well known as a high sensitivity ultraviolet detecting tube. The C3704 series can be operated as a UV...
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Mfg:DSI D/C:n/a Vendor:Other Category:Other
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Mfg:GE D/C:06+ Vendor:Other Category:Other
Mfg:GE D/C:06+ Vendor:Other Category:Other
Mfg:GE D/C:06+ Vendor:Other Category:Other
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C340 is a member of C*Core processor series with excellent performance, low consumption and 32-bit RISC. It is the core in the area of high-end embedded application design. The main features of C340 include low consumpti...
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Hamamatsu C3360 is a highly regulated bench-top power supply with -5kV, 1mA output. C3360 is designed especially for operations of microchannel plate incorporated photomultipliers (MCP-PMT), electron multipliers, and mic...
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Hamamatsu C3350 is a highly regulated bench-top power supply with ±3kV, 10mA output. The LED panel meter on the front panel allows easy and precise voltage monitoring. C3350 is especially suited for laboratory uses inclu...
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Mfg:ANAREN Pack:N/A D/C:N/A Vendor:Other Category:Other
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Designed to meet today's requirements for low jitter 5V applications. The C32xx Series utilizes fundamental and 3rd overtone crystal designs for excellent jitter performance. Available on 1 6 m m t a p e a n d r e e l i...
Mfg:CPM 05+ Vendor:Other Category:Other
The C328 JPEG compression module performs as a video camera or a JPEG compressed still camera and can be attached to a wireless or PDA host. Users can send out a snapshot command from the host in order to capture a full ...
Mfg:TDK Pack:120000 D/C:09+ Vendor:Other Category:Other
Mfg:TDK Pack:120000 D/C:09+ Vendor:Other Category:Other
Mfg:TDK D/C:O9+ Vendor:TDK Corporation (VA) Category:Capacitors
CAP CER 1.5UF 50V X7R 1210
Mfg:TDK D/C:O9+ Vendor:TDK Corporation Category:Capacitors
CAP CER 1.5UF 50V X7R 1210
Mfg:TDK D/C:O9+ Vendor:TDK Corporation Category:Capacitors
CAP CER 1.0UF 50V X7R 20% 1210
D/C:38596 Vendor:TDK Corporation (VA) Category:Capacitors
CAP CER 1UF 50V X7R 10% 1210
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The C3225X5R1E226KT is designed as one kind of ceramic capacitors for smoothing(SMD). C3225X5R1E226KT is one member of the C series with some features such as:(1)low ESR and excellent frequency characteristics make this ...
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The C3225X5R1C226KT is designed as one kind of ceramic capacitors for smoothing(SMD).It is one member of the C series with some features such as:(1)low ESR and excellent frequency characteristics make this capacitor a su...
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The C3225X5R0J476MT is designed as one kind of ceramic capacitors for smoothing(SMD).It is one member of the C series with some features such as:(1)low ESR and excellent frequency characteristics make this capacitor a su...
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The C3225X5R0J107MT is a high-performance 60-A rated, nonisolated, power module and it uses the latest multi-phase switched-mode topology which provides a small, ready-to-use module, that can power the most densely popul...
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The C3216X5ROJ226K is designed as one kind of ceramic capacitor that can be used in applications like snapper circuits for switching power supply, ringer circuits for telephone and modem, or other general high voltage ci...
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The C3216X5R1A226KT is designed as one kind of ceramic capacitors for smoothing(SMD).It is one member of the C series with some features such as:(1)low ESR and excellent frequency characteristics make this capacitor a su...
Vendor:Other Category:Other
The C3216X5R10J476MT is designed as one kind of ceramic capacitors for smoothing(SMD).It is one member of the C series with some features such as:(1)low ESR and excellent frequency characteristics make this capacitor a s...
Vendor:Other Category:Other
The C3216X5R0J226KT is designed as one kind of ceramic capacitors for smoothing(SMD).It is one member of the C series with some features such as:(1)low ESR and excellent frequency characteristics make this capacitor a su...
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Pack:TO220 D/C:07+/08+ Vendor:Other Category:Other
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Mfg:NIEC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
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Mfg:NIEC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
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Mfg:NIEC Pack:TO-263 D/C:08+ Vendor:Other Category:Other
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Mfg:NIEC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
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Mfg:NIEC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
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Mfg:NIEC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
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Multi-Element silicon avalanche photodiode made using a double-diffused ''reach-through'' structure. C30985E structure provides high responsivity up to 1060 nm as well as fast rise and fall times at all wavelengths. Feat...
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General purpose silicon avalanche photodiode C30956EH made using a double-diffused "reach-through" structure. This photodiode C30956EH is designed such that it's long wave response (>900 nm) has been enhanced without ...
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General purpose silicon avalanche photodiode C30956E made using a double-diffused "reach-through" structure. This photodiode C30956E is designed such that it's long wave response (>900 nm) has been enhanced without in...
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General purpose silicon avalanche photodiode made using a double-diffused "reach-through" structure. This photodiode C30955EH is designed such that it's long wave response (>900 nm) has been enhanced without introduci...
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General purpose silicon avalanche photodiode C30955E made using a double-diffused "reach-through" structure. This photodiode C30955E is designed such that it's long wave response (>900 nm) has been enhanced without in...
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General purpose silicon avalanche photodiode C30954EH made using a double-diffused "reach-through" structure. C30954EH photodiode is designed such that it's long wave response (>900 nm) has been enhanced without intro...
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General purpose silicon avalanche photodiode made using a double-diffused "reach-through" structure. C30954E photodiode is designed such that it's long wave response (>900 nm) has been enhanced without introducing any...
Pack:CAN12 Vendor:Other Category:Other
Si PIN Modules - High Bandwidth - 40MHz to 100MHz The C30950 uses bipolar amps.
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Quadrant silicon photodiodes C30927E-03 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the l...
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Quadrant silicon photodiodes C30927E-02 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the l...
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Quadrant silicon photodiodes C30927E-01 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the l...
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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extr...
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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. C30921E structure provides high responsivity between 400 and 1000 nm as well as e...
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Si PIN Modules - High Bandwidth - 40 MHz to 100 MHz The C30919E use biopolar amps.
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RCA development type C30904E is silicon avalanche photodiodes containing a light pipe which is an integral part of the package. These avalche photodiodes are made using a double-diffused "reach through"structure. This st...
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The C30902S-TC APD comes with a 1-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep the ...
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The C30902SH-TC APD comes with a 1-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep the...
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The C30902SH-DTC APD comes with a 2-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep th...
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The C30902S-DTC APD comes with a 2-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep the...
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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extr...
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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extr...
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The C3088 is a 1/4" color camera module with digital output. It uses OmniVision's CMOS image sensor OV6620. Combining CMOS technology together with an easy to use digital interface makes C3088 a low cost solution for hig...
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This family of N-type silicon p-i-n photodiodes C30831 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types maki...
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This C30822 family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodesC30810 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodes C30809 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodes C30808 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodes C30807 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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The C3077-70/-71 incorporates a next generation 2/3-inch CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter function enables monitoring of...
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The C3077-70/-71 incorporates a next generation 2/3-inch CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter function enables monitoring of...
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PerkinElmer's C30741 series of N-type Si PIN photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximal sensitivity is @ 800 nm. These epitaxial=struc...
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PerkinElmer's C30741 series of N-type Si PIN photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximal sensitivity is @ 800 nm. These epitaxial=struc...
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NEW - The short wavelength enhanced silicon avalanche photodiode (APD) by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700...
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The C30737 type avalanche photodiode provides high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameters of th...
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The C30723G is a large area InGaAs Pin photodiode providing a high responsivity from 900 nm to 1700 nm. Features: TO-8 package High responsivity High shunt resistance, low dark current Low capacitance for fast response t...
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The C30665G is a large area InGaAs Pin photodiode providing a high responsivity from 900 nm to 1700 nm. Features: TO-5 package High responsivity High shunt resistance, low dark current Low capacitance for fast response t...
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The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrument...
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Fast response, high quantum efficiency and low noise in the spectral range between 1100 nm and 1700 nm. C30662EH are optimized for use at a wavelength of 1540 nm and suitable for use in eye-safe laser range finding syste...
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