Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON)and thermal properties of the device are optimized for battery power management applications.
FDJ1028N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
3.2
A
12
PD
Power Dissipation for single Operation (Note 1a)
1.5
W
TJ,TSTG
Operating and Storage Junction Temperature Range
55 to+150
°C
Thermal Characteristics
RJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
80
°C/W
RJC
Thermal Resistance, Junction-to-Case
5
FDJ1028N Features
`3.2 A, 20 V. RDS(ON)= 90 m@ VGS= 4.5 V RDS(ON)=130m@ VGS= 2.5 V `Low gate charge `High performance trench technology for extremely lowRDS(ON) `FLMP SC75 package: Enhanced thermal performance in industry-standard package size
FDJ1028N Typical Application
·Battery management
FDJ127P Parameters
Technical/Catalog Information
FDJ127P
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
4.1A
Rds On (Max) @ Id, Vgs
60 mOhm @ 4.1A, 4.5V
Input Capacitance (Ciss) @ Vds
780pF @ 10V
Power - Max
1.6W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
10nC @ 4.5V
Package / Case
SC-75-6
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDJ127P FDJ127P
FDJ127P General Description
This P-Channel -1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications.
FDJ127P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
± 8
V
ID
Drain Current Continuous (Note 1a)
Pulsed
4.1
A
-16
PD
Power Dissipation (Note 1)
1.6
W
TJ,TSTG
Operating and Storage Junction Temperature Range
55to+150
°C
FDJ127P Features
• 4.1 A, 20 V. RDS(ON) = 60 m @ VGS = 4.5 V RDS(ON) = 85 m @ VGS = 2.5 V RDS(ON) = 133 m @ VGS = 1.8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package
This N-Channel -2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDJ128N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current Continuous (Note 1a)
Pulsed
5.5
A
16
PD
Power Dissipation for Single Operation (Note 1a)
1.6
W
TJ,TSTG
Operating and Storage Junction Temperature Range
55to+150
°C
FDJ128N Features
• 5.5 A, 20 V. RDS(ON) = 35 m @ VGS = 4.5 V RDS(ON) = 51 m @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package