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FDJ1028N, FDJ127P, FDJ128N

FDJ1028N, FDJ127P, FDJ128N Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:SOT-463  D/C:05+nopb

FDJ128N Picture

FDJ1028N, FDJ127P, FDJ128N Datasheet download

Five Points

Part Number: FDJ128N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SOT-463

D/C: 05+nopb

Description: MOSFET N-CHAN 20V 5.5A SC75-6

 

 
 
 
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FDJ1028N Suppliers

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  • FDJ1027P

  • D/C: 01+&   Adddate: 2024-04-25
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FDJ128N

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-04-25
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)

About FDJ1028N

PDF/DataSheet Download

Datasheet: FDJ1028N

File Size: 552804 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDJ127P Suppliers

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  • FDJ1027P

  • D/C: 01+&   Adddate: 2024-04-25
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FDJ128N

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-04-25
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)

About FDJ127P

PDF/DataSheet Download

Datasheet: FDJ127P

File Size: 176146 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDJ128N Suppliers

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  • FDJ128N

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-04-25
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • FDJ1027P

  • D/C: 01+&   Adddate: 2024-04-25
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FDJ128N

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-04-25
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)

About FDJ128N

PDF/DataSheet Download

Datasheet: FDJ128N

File Size: 178845 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDJ1028N Parameters

Technical/Catalog InformationFDJ1028N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs90 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds 200pF @ 10V
Power - Max1.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseSC-75-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDJ1028N
FDJ1028N

FDJ1028N General Description

This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON)and thermal properties of the device are optimized for battery power management applications.

FDJ1028N Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
3.2
A
12
PD
Power Dissipation for single Operation (Note 1a)
1.5
W
TJ,TSTG


Operating and Storage Junction Temperature Range
55 to+150
°C
Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient (Note 1a)
80
°C/W
RJC

Thermal Resistance, Junction-to-Case
5

FDJ1028N Features

`3.2 A, 20 V. RDS(ON)= 90 m@ VGS= 4.5 V
                      RDS(ON)=130m@ VGS= 2.5 V
`Low gate charge
`High performance trench technology for extremely lowRDS(ON)
`FLMP SC75 package: Enhanced thermal performance in industry-standard package size

FDJ1028N Typical Application

·Battery management

FDJ127P Parameters

Technical/Catalog InformationFDJ127P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.1A
Rds On (Max) @ Id, Vgs60 mOhm @ 4.1A, 4.5V
Input Capacitance (Ciss) @ Vds 780pF @ 10V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 4.5V
Package / CaseSC-75-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDJ127P
FDJ127P

FDJ127P General Description

This P-Channel -1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications.

FDJ127P Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
± 8
V
ID
Drain Current Continuous (Note 1a)

Pulsed
4.1
A
-16
PD
Power Dissipation (Note 1)
1.6
W
TJ,TSTG
Operating and Storage Junction Temperature Range
55to+150
°C

FDJ127P Features

• 4.1 A, 20 V. RDS(ON) = 60 m @ VGS = 4.5 V
                           RDS(ON) = 85 m @ VGS = 2.5 V
                           RDS(ON) = 133 m @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC75-6 surface mount package

FDJ127P Typical Application

• Battery management
• Load switch

FDJ127P Connection Diagram

FDJ128N Parameters

Technical/Catalog InformationFDJ128N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs35 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds 543pF @ 10V
Power - Max1.6W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs8nC @ 5V
Package / CaseSC-75-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDJ128N
FDJ128N
FDJ128NDKR ND
FDJ128NDKRND
FDJ128NDKR

FDJ128N General Description

This N-Channel -2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FDJ128N Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current Continuous (Note 1a)

Pulsed
5.5
A
16
PD
Power Dissipation for Single Operation (Note 1a)
1.6
W
TJ,TSTG
Operating and Storage Junction Temperature Range
55to+150
°C

FDJ128N Features

• 5.5 A, 20 V. RDS(ON) = 35 m @ VGS = 4.5 V
                      RDS(ON) = 51 m @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC75-6 surface mount
package

FDJ128N Typical Application

• Battery management

FDJ128N Connection Diagram

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