MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:FLMP D/C:2010+
FDJ1028N_NL, FDJ1032C, FDJ1032C_NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: FLMP
D/C: 2010+
Description: MOSFET N/P-CH 20V FLMP SC-75
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PDF/DataSheet Download
Datasheet: FDJ1027P
File Size: 138148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDJ1032C
File Size: 666255 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDJ1027P
File Size: 138148 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDJ1032C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.2A, 2.8A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3.2A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 200pF @ 10V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 3nC @ 4.5V |
| Package / Case | SC75-6 FLMP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDJ1032C FDJ1032C |
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
|
Symbol |
Parameter |
Q1 |
Q2 |
Units |
|
VDSS |
Drain-Source Voltage |
20 |
20 |
V |
|
VGSS |
Gate-Source Voltage |
±8 |
±12 |
V |
|
ID |
Drain Current Continuous (Note 1a) Pulsed |
2.8 |
3.2 |
A |
|
12 |
13 | |||
|
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) |
1.5 |
W | |
|
0.9 | ||||
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C | |
|
Thermal Characteristics | ||||
|
RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
80 |
°C/W | |
|
RJC |
Thermal Resistance, Junction-to-Case (Note 1a) |
5 | ||
`Q12.8 A, 20 V. RDS(ON)= 160 m@ VGS= 4.5 V
RDS(ON)= 230 m@ VGS= 2.5 V
RDS(ON)= 390 m@ VGS= 1.8 V
`Q23.2 A, 20 V. RDS(ON)= 90 m@ VGS= 4.5 V
RDS(ON)= 130 m@ VGS= 2.5 V
`Low gate charge
`High performance trench technology for extremely lowRDS(ON)
`FLMP SC75 package: Enhanced thermal performance in industry-standard package size
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