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This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
FDJ1027P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
± 8
V
ID
PD
Drain Current Continuous (Note 1a)
Pulsed
2.8
A
12
Power Dissipation for Single Operation (Note 1a) (Note 1b)
1.5
0.9
TJ,TSTG
Operating and Storage Junction Temperature Range
55to+150
°C
FDJ1027P Features
• 2.8 A, 20 V RDS(ON) = 160 m @ VGS = 4.5 V RDS(ON) = 230 m @ VGS = 2.5 V RDS(ON) = 390 m @ VGS = 1.8 V • Low gate charge, High Power and Current handling capability • High performance trench technology for extremely low RDS(ON) • FLMP SC75 package: Enhanced thermal performance in industry-standard package size