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NDB4050, NDB4050L, NDB4060

Table of contents:
Info of NDB4050
Info of NDB4050L
Info of NDB4060

NDB4050, NDB4050L, NDB4060 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:96+

NDB4050, NDB4050L, NDB4060 Datasheet download

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Part Number: NDB4050

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-263

D/C: 96+

Description: MOSFET N-CH 60V 15A D2PAK

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NDB4050 Parameters

Technical/Catalog Information	NDB4050
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	100 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	50W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDB4050 NDB4050 NDB4050CT ND NDB4050CTND NDB4050CT

NDB4050 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB4050 Maximum Ratings

Symbol	Parameter	NDP4050	NDB4050	Units
V_DSS	Drain-Source Voltage	50		V
V_DGR	Drain-Gate Voltage (R_GS < 1 MW)	50		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P 50 µs)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	± 15		A
		± 45
P_D	Total Power Dissipation Derate above 25°C	50		W
		0.33		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

NDB4050 Features

`15A, 50V. R_DS(ON) = 0.10 @ V_GS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDB4050L Parameters

Technical/Catalog Information	NDB4050L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 25V
Power - Max	50W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDB4050L NDB4050L NDB4050LCT ND NDB4050LCTND NDB4050LCT

NDB4050L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB4050L Maximum Ratings

Symbol	Parameter	NDP4050L	NDB4050L	Units
V_DSS	Drain-Source Voltage	50		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	50		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	± 16		V
		± 25
I_D	Drain Current - Continuous - Pulsed	15		A
		45
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	50		W
		0.33		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

NDB4050L Features

·15A, 50V. R_DS(ON) = 0.1W @ V_GS = 5V
·Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design for extremely low R_DS(ON).
·TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

NDB4060 Parameters

Technical/Catalog Information	NDB4060
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	100 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	50W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDB4060 NDB4060 NDB4060CT ND NDB4060CTND NDB4060CT

NDB4060 General Description

NDB4060 Maximum Ratings

Symbol	Parameter	NDP4050	NDB4050	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS 1 MW)	60		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	± 15		A
		± 45
P_D	Total Power Dissipation Derate above 25°C	50		W
		0.33		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

NDB4060 Features

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