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NDB4060A, NDB408AE, NDB408AL

Table of contents:
Info of NDB4060A
Info of NDB408AE
Info of NDB408AL

NDB4060A, NDB408AE, NDB408AL Selling Leads, Datasheet

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NDB4060A, NDB408AE, NDB408AL Datasheet download

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Part Number: NDB4060A

MFG: FAIRCHILD

Package Cooled: www.dayue-hk.com

D/C: 09+ ROHS

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NDB408AE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB408AE Maximum Ratings

Symbol	Parameter	NDP408A NDP408AE NDB408A NDB408AE	NDP408B NDP408BE NDB408B NDB408BE	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (RGS < 1 M)	60		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs)	± 20		V
		± 40
I_D	Drain Current - Continuous - Pulsed	12	11	A
		36	33
P_D	Total Power Dissipation Derate above 25°C	50		W
		0.33		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

NDB408AE Features

·12 and 11A, 80V. R_DS(ON) = 0.16 and 0.20W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low R_DS(ON).
·TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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