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NDB508AE, NDB508B, NDB508BE

NDB508AE, NDB508B, NDB508BE Selling Leads, Datasheet

MFG:MOT/ON  Package Cooled:09+  D/C:TO-

NDB508AE, NDB508B, NDB508BE Picture

NDB508AE, NDB508B, NDB508BE Datasheet download

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Part Number: NDB508AE

 

MFG: MOT/ON

Package Cooled: 09+

D/C: TO-

 

 

 
 
 
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About NDB508AE

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Datasheet: NDB508AE

File Size: 75207 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDB508B

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Datasheet: NDB508B

File Size: 75207 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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Datasheet: NDB508BE

File Size: 75207 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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NDB508AE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB508AE Maximum Ratings

Symbol
Parameter
NDP508A NDP508AE
NDB508A NDB508AE
NDP508B NDP508BE
NDB508B NDB508BE
Units
VDSS
Drain-Source Voltage
80
V
VDGR
Drain-Gate Voltage (RGS 1 M)
80
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
19
17
A
57
51
PD
Total Power Dissipation
Derate above 25°C
75
W
0.5
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB508AE Features

`19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDB508B General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB508B Maximum Ratings

Symbol
Parameter
NDP508A NDP508AE
NDB508A NDB508AE
NDP508B NDP508BE
NDB508B NDB508BE
Units
VDSS
Drain-Source Voltage
80
V
VDGR
Drain-Gate Voltage (RGS 1 M)
80
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
19
17
A
57
51
PD
Total Power Dissipation
Derate above 25°C
75
W
0.5
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB508B Features

`19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDB508BE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB508BE Maximum Ratings

Symbol
Parameter
NDP508A NDP508AE
NDB508A NDB508AE
NDP508B NDP508BE
NDB508B NDB508BE
Units
VDSS
Drain-Source Voltage
80
V
VDGR
Drain-Gate Voltage (RGS 1 M)
80
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
19
17
A
57
51
PD
Total Power Dissipation
Derate above 25°C
75
W
0.5
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB508BE Features

`19 and 17A, 80V. RDS(ON) = 0.08 and 0.10.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

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