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NDB5060, NDB5060L, NDB5068L

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Info of NDB5060
Info of NDB5060L
Info of NDB5068L

NDB5060, NDB5060L, NDB5068L Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT263 D/C:09+

NDB5060, NDB5060L, NDB5068L Datasheet download

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Part Number: NDB5060L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SOT263

D/C: 09+

Description: MOSFET N-CH 60V 26A D2PAK

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NDB5060 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB5060 Maximum Ratings

Symbol	Parameter	NDP5060	NDB5060	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	60		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	±20		V
		±40
I_D	Drain Current - Continuous - Pulsed	26		A
		78
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	68		W
		0.45		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB5060 Features

`26 A, 60 V. R_DS(ON) = 0.05 @ V_GS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDB5060L Parameters

Technical/Catalog Information	NDB5060L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	35 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	840pF @ 30V
Power - Max	68W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	24nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDB5060L NDB5060L NDB5060LDKR ND NDB5060LDKRND NDB5060LDKR

NDB5060L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB5060L Maximum Ratings

Symbol	Parameter	NDP5060L	NDB5060L	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	60		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	± 16		V
		± 25
I_D	Drain Current - Continuous - Pulsed	26		A
		78
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	68		W
		0.45		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB5060L Features

`26 A, 60 V. R_DS(ON) = 0.05 @ V_GS= 5 V
R_DS(ON) = 0.035 @ V_GS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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