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NDB603, NDB6030, NDB6030L

Table of contents:
Info of NDB603
Info of NDB6030
Info of NDB6030L

NDB603, NDB6030, NDB6030L Selling Leads, Datasheet

MFG:FSC Package Cooled:TO-263 D/C:TO-263

NDB603, NDB6030, NDB6030L Datasheet download

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Part Number: NDB603

MFG: FSC

Package Cooled: TO-263

D/C: TO-263

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NDB6030 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB6030 Maximum Ratings

Symbol	Parameter	NDP6030	NDB6030	Units
V_DSS	Drain-Source Voltage	30		V
V_DGR	Drain-Gate Voltage (R_GS < 1 M)	30		V
V_GSS	Gate-Source Voltage - Continuous	±20		V
I_D	Drain Current - Continuous - Pulsed	46		A
		135
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	75		W
		0.5		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB6030 Features

·46 A, 30 V. R_DS(ON) = 0.018 @ V_GS=10 V.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design for extremely low R_DS(ON).
·TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications

NDB6030L General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB6030L Maximum Ratings

Symbol	Parameter	NDP603AL	NDB603AL	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage - Continuous	± 16		V
I_D	Drain Current - Continuous - Pulsed	52		A
		156
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	75		W
		0.5		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

NDB6030L Features

`52 A, 30 V. R_DS(ON) = 0.0135 @ V_GS=10 V
R_DS(ON) = 0.020 @ V_GS=4.5 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`High density cell design for extremely low R_DS(ON).
`175°C maximum junction temperature rating.

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