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NDB510A, NDB510AE, NDB510B

NDB510A, NDB510AE, NDB510B Selling Leads, Datasheet

MFG:NSC  Package Cooled:D2PAK  D/C:TO-

NDB510A, NDB510AE, NDB510B Picture

NDB510A, NDB510AE, NDB510B Datasheet download

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Part Number: NDB510A

 

MFG: NSC

Package Cooled: D2PAK

D/C: TO-

 

 

 
 
 
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About NDB510A

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Datasheet: NDB510A

File Size: 74239 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDB510AE

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Datasheet: NDB510AE

File Size: 74239 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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Datasheet: NDB510B

File Size: 74239 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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NDB510A General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB510A Maximum Ratings

Symbol
Parameter
NDP510A NDP510AE
NDB510A NDB510AE
NDP510B NDP510BE
NDB510B NDB510BE
Units
VDSS
Drain-Source Voltage
100
V
VDGR
Drain-Gate Voltage (RGS < 1 M)
100
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
15
13
A
60
52
PD
Total Power Dissipation
Derate above 25°C
75
W
0.5
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB510A Features

`15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDB510AE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB510AE Maximum Ratings

Symbol
Parameter
NDP510A NDP510AE
NDB510A NDB510AE
NDP510B NDP510BE
NDB510B NDB510BE
Units
VDSS
Drain-Source Voltage
100
V
VDGR
Drain-Gate Voltage (RGS < 1 M)
100
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
15
13
A
60
52
PD
Total Power Dissipation
Derate above 25°C
75
W
0.5
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB510AE Features

`15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDB510B General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB510B Maximum Ratings

Symbol
Parameter
NDP510A NDP510AE
NDB510A NDB510AE
NDP510B NDP510BE
NDB510B NDB510BE
Units
VDSS
Drain-Source Voltage
100
V
VDGR
Drain-Gate Voltage (RGS < 1 M)
100
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
15
13
A
60
52
PD
Total Power Dissipation
Derate above 25°C
75
W
0.5
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB510B Features

`15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

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