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NDB408B, NDB408BE, NDB408L

NDB408B, NDB408BE, NDB408L Selling Leads, Datasheet

MFG:MOT/ON  Package Cooled:09+  D/C:TO-

NDB408B, NDB408BE, NDB408L Picture

NDB408B, NDB408BE, NDB408L Datasheet download

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Part Number: NDB408B

 

MFG: MOT/ON

Package Cooled: 09+

D/C: TO-

 

 

 
 
 
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About NDB408B

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Datasheet: NDB408B

File Size: 74813 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDB408BE

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Datasheet: NDB408BE

File Size: 74813 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDB4050

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Datasheet: NDB4050

File Size: 68582 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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NDB408B General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB408B Maximum Ratings

Symbol
Parameter
NDP408A NDP408AE
NDB408A NDB408AE
NDP408B NDP408BE
NDB408B NDB408BE
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1 M)
60
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
12
11
A
36
33
PD
Total Power Dissipation
Derate above 25°C
50
W
0.33
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB408B Features

·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDB408BE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB408BE Maximum Ratings

Symbol
Parameter
NDP408A NDP408AE
NDB408A NDB408AE
NDP408B NDP408BE
NDB408B NDB408BE
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1 M)
60
V
VGSS
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 20
V
± 40
ID
Drain Current - Continuous
- Pulsed
12
11
A
36
33
PD
Total Power Dissipation
Derate above 25°C
50
W
0.33
W/
TJ,TSTG
Operating and Storage Temperature Range
-65 to 175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275

NDB408BE Features

·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

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