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NDB7061L, NDB706AEC, NDB706AL

Table of contents:
Info of NDB7061L
Info of NDB706AEC
Info of NDB706AL

NDB7061L, NDB706AEC, NDB706AL Selling Leads, Datasheet

MFG:MOT/ON Package Cooled:6000 D/C:TO-

NDB7061L, NDB706AEC, NDB706AL Datasheet download

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Part Number: NDB7061L

MFG: MOT/ON

Package Cooled: 6000

D/C: TO-

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NDB7061L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB7061L Maximum Ratings

Symbol	Parameter	NDP7060L	NDB7060L	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	60		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	± 16		V
		± 25
I_D	Drain Current - Continuous - Pulsed	60		A
		180
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	130		W
		0.87		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDB7061L Features

`60 A, 60 V. R_DS(ON) = 0.018 @ V_GS= 5 V
R_DS(ON) = 0.013 @ V_GS= 10 V.
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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