MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:9800 D/C:TO
STW14NM50, STW14NM50FD, STW150NF55 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 9800
D/C: TO
Description: MOSFET N-CH 55V 120A TO-247
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PDF/DataSheet Download
Datasheet: STW14NM50
File Size: 53058 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW14NM50FD
File Size: 665420 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW150NF55
File Size: 564345 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STW14NM50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 550V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
| Power - Max | 175W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW14NM50 STW14NM50 497 3259 5 ND 49732595ND 497-3259-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprierati strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 500 | V |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 500 | V |
| VGS | Gate-Source Voltage | ± 30 | V |
| ID | Drain Current (continuous) at Tc = 25 | 14 | A |
| ID | Drain Current (continuous) at Tc = 100 |
8.8 | A |
| IDM(1) | Drain Current (pulsed) | 56 | A |
| PTOT | Total Dissipation at Tc = 25 | 175 | W |
| Derating Factor | 1.28 | W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 6 | V/ns |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
(`) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
(*)Limited only by maximum temperature allowed
The MDmesh™ family is very suitablr for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
| Technical/Catalog Information | STW14NM50FD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW14NM50FD STW14NM50FD |
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
| Symbol | Parameter |
Value |
Unit | ||
| TO-220/ D2PAK/I2PAK |
TO-220FP |
TO-247 | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | ||
| VGS | Gate- source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuos) at TC = 25 |
12 |
12(*) |
14 |
A |
| ID | Drain Current (continuos) at TC = 100 |
7.5 |
7.5(*) |
8.8 |
A |
| IDM() | Drain Current (pulsed) |
48 |
48(*) |
56 |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
35 |
175 |
W |
| Derating Factor |
1.28 |
0.28 |
1.4 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
-
|
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
- 65 to 150 - 65 to 150 |
| ||
| Technical/Catalog Information | STW150NF55 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 4400pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW150NF55 STW150NF55 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
55 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
55 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID(**) |
Drain Current (continuous) at Tc = 25 |
120 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
106 |
A |
|
IDM(`) |
Drain Current (pulsed) |
480 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
300 |
W |
|
Derating Factor |
2.0 |
W/
| |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
8 |
V/ns |
| EAS (2) | Single Pulse Avalanche Energy | 850 | mJ |
|
Tstg |
Storage Temperature |
-55 to 175 |
|
|
Tj |
Max. Operating Junction Temperature |
-55 to 175 |
|
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