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STW45NM50FD, STW45NM60, STW47NM50

STW45NM50FD, STW45NM60, STW47NM50 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:TO-247  D/C:dc0522

STW45NM50FD Picture

STW45NM50FD, STW45NM60, STW47NM50 Datasheet download

Five Points

Part Number: STW45NM50FD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-247

D/C: dc0522

Description: MOSFET N-CH 650V 45A TO-247

 

 
 
 
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STW45NM50FD Suppliers

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  • STW10NK80Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NK90Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
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  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)

About STW45NM50FD

PDF/DataSheet Download

Datasheet: STW45NM50FD

File Size: 261368 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STW45NM60 Suppliers

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  • STW45NM60

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
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  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW45NM60

  • Vendor: ST Pack: IC D/C: 2019+& Qty: 6000 Note: NEW  Adddate: 2024-05-01
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  • HRS Industries Limited   China
    Contact: Ms.stella chan  
    Tel: 0086-755-29994447
    Fax: 0086-755-29994442
    (33)

About STW45NM60

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Datasheet: STW45NM60

File Size: 262398 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STW47NM50 Suppliers

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  • STW10NK80Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NK90Z

  • Vendor: ST Qty: 1235  Adddate: 2024-05-01
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)
  • STW11NM80

  • Vendor: ST D/C: 07+&   Adddate: 2024-05-01
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About STW47NM50

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Datasheet: STW47NM50

File Size: 120002 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STW45NM50FD Parameters

Technical/Catalog InformationSTW45NM50FD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs100 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max417W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW45NM50FD
STW45NM50FD
497 2718 5 ND
49727185ND
497-2718-5

STW45NM50FD General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

STW45NM50FD Maximum Ratings

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain- gate Voltage (RGS = 20 k) 500 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at Tc = 25 45 A
ID
Drain Current (continuous) at Tc = 100
28.4 A
IDM(`) Drain Current (pulsed) 180 A
PTOT Total Dissipation at Tc = 25 417 W
Derating Factor 2.08 W/
dv/dt(1) Peak Diode Recovery voltage slope 20 V/ns
Tstg Storage Temperature 65 to 150
Tj
Max. Operating Junction Temperature 150

(`) Pulse width limited by safe operating area (1) ISD 45A, di/dt400A/µs, VDD V(BR)DSS, Tj TJMAX.

 

 

STW45NM50FD Typical Application

ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

STW45NM60 Parameters

Technical/Catalog InformationSTW45NM60
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs110 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds 3800pF @ 25V
Power - Max417W
PackagingTube
Gate Charge (Qg) @ Vgs134nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW45NM60
STW45NM60
497 2768 5 ND
49727685ND
497-2768-5

STW45NM60 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

STW45NM60 Maximum Ratings

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

600 V
VDGR

Drain- gate Voltage (RGS = 20 k)

600 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

45 A
ID

Drain Current (continuous) at Tc = 100

28 A
IDM(•)

Drain Current (pulsed)

180 A
PTOT

Total Dissipation at Tc = 25

417 W

Derating Factor

3.33 W/

dv/dt(1)

Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150
(•)Pulse width limited by safe operating area
(1)ISD 45A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.

STW45NM60 Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

STW47NM50 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

STW47NM50 Maximum Ratings

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

500 V
VDGR

Drain- gate Voltage (RGS = 20 k)

500 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

45 A
ID

Drain Current (continuous) at Tc = 100

28.4 A
IDM(•)

Drain Current (pulsed)

180 A
PTOT

Total Dissipation at Tc = 25

417 W

Derating Factor

2.08 W/

dv/dt(1)

Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150
(•)Pulse width limited by safe operating area
(1)ISD 45A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.

STW47NM50 Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

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