STW6NA80, STW6NA90, STW6NB100 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
STW6NA80, STW6NA90, STW6NB100 Datasheet download
Part Number: STW6NA80
MFG: ST
Package Cooled: 09+
D/C: TO
MFG:ST Package Cooled:09+ D/C:TO
STW6NA80, STW6NA90, STW6NB100 Datasheet download
MFG: ST
Package Cooled: 09+
D/C: TO
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PDF/DataSheet Download
Datasheet: STW6NA80
File Size: 142202 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW6NA90
File Size: 75680 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW6NB100
File Size: 88820 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Symbol |
Parameter |
Value |
Unit | |
STW6NA80 |
STH6NA80FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
800 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
5.4 |
3.4 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
3.4 |
2.1 |
A |
IDM () |
Drain Current (pulsed) |
22 |
22 |
A |
PTOT |
Total Dissipation at TC = 25°C |
150 |
60 |
W |
Derating Factor |
1.2 |
0.48 |
W/°C | |
VISO |
Insulation Withstand Voltage (DC) |
- |
4000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
Using the latest high voltage technology,STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
1000 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
1000 | V |
VGS |
Gate-source Voltage |
±30 | V |
ID |
Drain Current (continuous) at Tc = 25 |
5.4 | A |
ID |
Drain Current (continuous) at Tc = 100 |
3.4 | A |
IDM(•) |
Drain Current (pulsed) |
21 | A |
PTOT |
Total Dissipation at Tc = 25 |
160 | W |
Derating Factor |
1.28 | W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
Tstg |
Storage Temperature |
-65 to 150 | |
Tj |
Max. Operating Junction Temperature |
150 |