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STW8NA60, STW8NA80, STW8NB100

Table of contents:
Info of STW8NA60
Info of STW8NA80
Info of STW8NB100

STW8NA60, STW8NA80, STW8NB100 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:9800 D/C:TO

STW8NA60, STW8NA80, STW8NB100 Datasheet download

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Part Number: STW8NB100

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 9800

D/C: TO

Description: MOSFET N-CH 1KV 7.3A TO-247

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STW8NA60 Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STW8NA60	STH8NA60FI	Unit
V_DS	Drain-source Voltage (VGS = 0)	600		V
V_DGR	Drain- gate Voltage (RGS = 20 kW)	600		V
V_GS	Gate-source Voltage	± 30		V
I_D	Drain Current (continuous) at Tc = 25 oC	8	5	A
I_D	Drain Current (continuous) at Tc = 100 oC	5.1	3.2	A
I_DM^(•)	Drain Current (pulsed)	32	32	A
P_tot	Total Dissipation at Tc = 25 oC	150	60	W
	Derating Factor	1.2	0.48	W/_^oC
V_ISO	Insulation Withstand Voltage (DC)	-	4000	V
T_stg	Storage Temperature	-65 to 150		^oC
T_j	Max.Operating Junction Temperature	150		^oC

STW8NA60 Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

STW8NA80 General Description

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

STW8NA80 Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STW18NB80	STH18NB80FI	Unit
V_DS	Drain-source Voltage (V_GS = 0)	800		V
V_DGR	Drain-gate Voltage (R_GS = 20 kW)	800		V
V_GS	Gate- source Voltage	±30		V
I_D	Drain Current (continuos) at T_C= 25°C	7.2	4.5	A
I_D	Drain Current (continuos) at T_C= 100°C	4.5	2.8	A
I_DM ₍₎	Drain Current (pulsed)	28.8	28.8	A
P_TOT	Total Dissipation at T_C= 25°C	170	70	W
	Derating Factor	1.4	0.56	W/°C
V_ISO	Insulation Withstand Voltage (DC)	-	4000	V
T_stg	Storage Temperature	65 to 150		°C
T_j	Max. Operating Junction Temperature	150		°C

STW8NA80 Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE

STW8NB100 Parameters

Technical/Catalog Information	STW8NB100
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	1.45 Ohm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	95nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STW8NB100 STW8NB100 497 2646 5 ND 49726465ND 497-2646-5

STW8NB100 General Description

Using the latest high voltage MESH OVERLAY^TMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STW8NB100 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	1000	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	1000	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at T_c= 25	8	A
I_D	Drain Current (continuous) at T_c = 100	5	A
I_DM(•)	Drain Current (pulsed)	32	A
P_TOT	Total Dissipation at T_c = 25	190	W
	Derating Factor	1.52	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 8A, di/dt 200A/µs, V_DD V_(BR)DSS, T_jT_JMAX.

STW8NB100 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLY (SMPS)
· DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE

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