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TIM7785-35SL,TIM7785-30SL,TIL5942,
TIM7785-35SL
Mfg:Toshiba Vendor:Other Category:Other
TIM7785-30SL
Vendor:Other Category:Other
The TIM7785-30SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 45 dBm at 7.7 GHz to 8.5 GHz;(2)high gain: G1db = 6.0 dB at 7.7 GHz to 8.5 GHz;(3)broad b...TIM7785-16UL
Mfg:Toshiba Vendor:Other Category:Other
TIM7785-16SL
Vendor:Other Category:Other
TIM7785-16
Vendor:Other Category:Other
The TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 42.5 dBm at 7.7 GHz to 8.5 GHz;(2)high gain: G1db = 5.0 dB at 7.7 GHz to 8.5 GHz;(3)broad b...TIM7179-8UL
Mfg:Toshiba Vendor:Other Category:Other
TIM7179-45SL
Mfg:Toshiba Vendor:Other Category:Other
TIM6472-8UL
Mfg:Toshiba Vendor:Other Category:Other
TIM6472-4UL
Mfg:Toshiba Vendor:Other Category:Other
TIM6472-4SL
Vendor:Other Category:Other
TIM6472-45SL
Mfg:Toshiba Vendor:Other Category:Other
TIM6472-35SL
Vendor:Other Category:Other
The TIM6472-35SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 45.5 dBm at 6.4 GHz to 7.2 GHz;(2)high gain: G1db = 8.0 dB at 6.4 GHz to 7.2 GHz;(3)broad...TIM6472-12UL
Mfg:Toshiba Vendor:Other Category:Other
TIM5964-80SL
Mfg:Toshiba Vendor:Other Category:Other
TIM5964-8
Vendor:Other Category:Other
The TIM5964-8 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 39 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 8.0 dB at 5.9 GHz to 6.4 GHz;(3)internally...TIM5964-6UL
Vendor:Other Category:Other
TIM5964-60SL
Mfg:Toshiba Vendor:Other Category:Other
TIM5964-4UL
Mfg:Toshiba Vendor:Other Category:Other
TIM5964-4A
Vendor:Other Category:Other
The TIM5964-4A is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 36.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 8.5 dB at 5.9 GHz to 6.4 GHz;(3)interna...TIM5964-45SL
Vendor:Other Category:Other
The TIM5964-45SL is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 46.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 9.0 dB at 5.9 GHz to 6.4 GHz;(3)broad...TIM5964-35SLA-422
Vendor:Other Category:Other
The TIM5964-35SLA-422 is one member of the TIM5964-35SLA family which has six points of features:(1)low intermodulation distortion:IM3=-45 dBc at Po= 35.0dBm, single carrier level;(2)high power:P1dB=45.5dBm at 5.9GHz to ...TIM5964-35SLA-251
Mfg:Toshiba Vendor:Other Category:Other
TIM5964-35SLA
Mfg:Toshiba Pack:Transistor Vendor:Other Category:Other
TIM5964-30SL
Mfg:Toshiba Vendor:Other Category:Other
TIM5964-25UL
Vendor:Other Category:Other
TIM5964-16UL
Vendor:Other Category:Other
TIM5964-16SL
Vendor:Other Category:Other
The TIM5964-16SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 42.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 8.0 dB at 5.9 GHz to 6.4 GHz;(3)inter...TIM5964-12UL
Mfg:Toshiba Vendor:Other Category:Other
TIM5359-8SL
Mfg:Toshiba Vendor:Other Category:Other
TIM5359-60SL
Vendor:Other Category:Other
TIM5359-4UL
Mfg:Toshiba Vendor:Other Category:Other
TIM5359-4SL
Vendor:Other Category:Other
TIM5359-45SL
Mfg:Toshiba Vendor:Other Category:Other
TIM5359-4
Vendor:Other Category:Other
The TIM5359-4 is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 36.0 dBm at 5.3 GHz to 5.9 GHz;(2)high gain: G1db = 9.0 dB at 5.3 GHz to 5.9 GHz;(3)broad ba...TIM5359-35SL
Mfg:Toshiba Vendor:Other Category:Other
TIM5053-8SL
Vendor:Other Category:Other
TIM5053-16SL
Mfg:Toshiba Vendor:Other Category:Other
TIM4450-8SL
Mfg:Toshiba Vendor:Other Category:Other
TIM4450-60SL
Mfg:Toshiba Vendor:Other Category:Other
TIM4450-4UL
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
TIM4450-35SL
Mfg:Toshiba Vendor:Other Category:Other
TIM4450-16UL
Mfg:Toshiba Vendor:Other Category:Other
TIM3742-8UL
Mfg:Toshiba Vendor:Other Category:Other
TIM3742-8SL
Vendor:Other Category:Other
TIM3742-4UL
Vendor:Other Category:Other
TIM3742-4SL-341
Vendor:Other Category:Other
TIM3742-4SL
Vendor:Other Category:Other
The TIM3742-4SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 36.5 dBm at 3.7 GHz to 4.2 GHz;(2)high gain: G1db = 10.5 dB at 3.7 GHz to 4.2 GHz;(3)inter...TIM3742-35SL
Mfg:Toshiba Vendor:Other Category:Other
TIM3742-25UL
Mfg:Toshiba Vendor:Other Category:Other
TIM3742-16SL-341
Mfg:Toshiba Vendor:Other Category:Other
TIM3742-16SL
Vendor:Other Category:Other
The TIM3742-16SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)low intermodulation distortion: IM3= -45 dBc at Po = 31.5 dBm, single carrier level;(2)high power: P1db = 42...TIM3742-12UL
Mfg:Toshiba Vendor:Other Category:Other
TIM3536-60
Vendor:Other Category:Other
The TIM3536-60 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 48 dBm at 3.5 GHz to 3.6 GHz;(2)high gain: G1db = 9 dB at 3.5 GHz to 3.6 GHz;(3)internally ...TIM3438-16SL
Mfg:Toshiba Vendor:Other Category:Other
TIM226
Vendor:Other Category:Other
The Type TIM radial molded solid tantalum capacitor TIM226 is great for saving board space with its higher profile and smaller board space requirement. It is ideal for high density packaging coupled with low DCL an...TIM1415-2
Vendor:Other Category:Other
TIM1414-7
Vendor:Other Category:Other
The TIM1414-7 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 38.5 dBm at 14.0 GHz to 14.5 GHz;(2)high gain: G1db = 6.5 dB at 14.0 GHz to 14.5 GHz;(3)broa...TIM1414-5L
Vendor:Other Category:Other
TIM1414-5-252
Vendor:Other Category:Other
The TIM1414-5-252 is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 37.5 dBm at 13.75 GHz to 14.5 GHz;(2)high gain: G1db = 5.5 dB at 13.75 GHz to 14.5 GHz;(...TIM1414-4LA
Mfg:Toshiba Vendor:Other Category:Other
TIM1414-30L
Vendor:Other Category:Other
TIM1414-2L
Mfg:Toshiba Vendor:Other Category:Other
TIM1414-18L-252
Mfg:Toshiba Vendor:Other Category:Other
TIM1414-18L
Mfg:Toshiba Vendor:Other Category:Other
TIM1414-15L
Mfg:Toshiba Vendor:Other Category:Other
TIM1414-10LA
Mfg:Toshiba Vendor:Other Category:Other
TIM1314-30L
Mfg:Toshiba Vendor:Other Category:Other
TIM1213-5
Mfg:Toshiba Vendor:Other Category:Other
TIM1213-4L
Mfg:Toshiba Vendor:Other Category:Other
TIM1213-15L
Vendor:Other Category:Other
TIM1112-8
Vendor:Other Category:Other
The TIM1112-8 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 39.5 dBm at 11.7 GHz to 12.7 GHz;(2)high gain: G1db = 5.0 dB at 11.7 GHz to 12.7 GHz;(3)broa...TIM1112-4
Vendor:Other Category:Other
The TIM1112-4 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 36.5 dBm at 11.7 GHz to 12.7 GHz;(2)high gain: G1db = 7.5 dB at 11.7 GHz to 12.7 GHz;(3)broa...TIM1112-2
Vendor:Other Category:Other
The TIM1112-2 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 33.5 dBm at 11.7 GHz to 12.7 GHz;(2)high gain: G1db = 7.5 dB at 11.7 GHz to 12.7 GHz;(3)broa...TIM1112-15L
Vendor:Other Category:Other
TIM1011-8L
Mfg:Toshiba Vendor:Other Category:Other
TIM1011-5L
Mfg:Toshiba Vendor:Other Category:Other
TIM1011-4L
Mfg:Toshiba Vendor:Other Category:Other
TIM1011-2L
Mfg:Toshiba Vendor:Other Category:Other
TIM1011-15L
Mfg:Toshiba Vendor:Other Category:Other
TIM1011-10L
Vendor:Other Category:Other
TIM0910-5
Vendor:Other Category:Other
TIM0910-4
Vendor:Other Category:Other
TIM0910-2
Vendor:Other Category:Other
The TIM0910-2 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 33.5 dBm at 9.5 GHz to 10.5 GHz;(2)high gain: G1db = 7.5 dB at 9.5 GHz to 10.5 GHz;(3)broad ...TIM0910-15L
Vendor:Other Category:Other
The TIM0910-15L is designed as one kind of microwave power GaAs FET device that has four points of features:(1)low intermodulation distortion: IM3= -45 dBc at Po = 30.0 dBm, single carrier level;(2)high power: P1db = 42....TIM
Vendor:Other Category:Other
Radial Leaded, Solid Tantalum Capacitor TIMTIL925
D/C:07+ Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL923 has one channel in a 4-pin package, the TIL924 has two channels in a 8-pin pack...TIL924
Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL923 has one channel in a 4-pin package, the TIL924 has two channels in a 8-pin pack...TIL923A
Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL923 has one channel in a 4-pin package, the TIL924 has two channels in a 8-pin pack...TIL923
Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL923 has one channel in a 4-pin package, the TIL924 has two channels in a 8-pin pack...TIL922
Vendor:Other Category:Other
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one channel...TIL921
Vendor:Other Category:Other
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one channel...TIL920A
Vendor:Other Category:Other
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one channel...TIL920
Mfg:TI Vendor:Other Category:Other
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one channel...TIL917C
Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL917 has one channel in a 4-pin package, the TIL918 has two channels in an 8-pin pac...TIL917B
Pack:DIP-4 Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL917 has one channel in a 4-pin package, the TIL918 has two channels in an 8-pin pac...TIL917A
Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL917 has one channel in a 4-pin package, the TIL918 has two channels in an 8-pin pac...TIL917
Vendor:Other Category:Other
These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL917 has one channel in a 4-pin package, the TIL918 has two channels in an 8-pin pac...TIL601
Vendor:Other Category:Other
The TIL601 is a type of N-P-N planar silicon phototransistor. Features of TIL601 are:(1)hermetically-sealed pill packa ge; (2)recommended for application in character recognition, tape and card readers, velocity indicato...TIL5942A
Mfg:ti D/C:08+ Vendor:Other Category:Other
The TIL5942 and TIL5942A consist of an advanced current-mode-PWM controller and a TL1431 adjustable precision shunt regulator, incorporated in a single package. The controller provides a photodetector, an improved MOSFET...TIL5942
Mfg:TI Pack:SOP14 D/C:07+/08+ Vendor:Other Category:Other
The TIL5942 and TIL5942A consist of an advanced current-mode-PWM controller and a TL1431 adjustable precision shunt regulator, incorporated in a single package. The controller provides a photodetector, an improved MOSFET...