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HYB 514175BJ-50,HYB 514171BJ-60,HY64UD16162M,
HYB 514175BJ-50
Vendor:Other Category:Other
The HYB 514175BJ-50 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 514175BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, bo...HYB 514171BJ-60
Vendor:Other Category:Other
The feature of HYB 514171BJ-60: * 262 144 words by 16-bit organization* 0 to 70 C operating temperature* Fast access and cycle time* RAS access time:50 ns (-50 version)60 ns (-60 version)* CAS15ns (-50, -60 version)* Cy...HYB 514171BJ-50
Vendor:Other Category:Other
The features of HYB 514171BJ-50: * 262 144 words by 16-bit organization* 0 to 70 C operating temperature* Fast access and cycle time* RAS access time:50 ns (-50 version)60 ns (-60 version)* CAS15ns (-50, -60 version)* C...HYB 514100BJ-60
Vendor:Other Category:Other
The HYB 514100BJ-60 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit. The HYB 514100BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, ...HYB 514100BJ-50
Vendor:Other Category:Other
The HYB 514100BJ-50 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit. The HYB 514100BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, ...HYB 5118165BSJ
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HYB 5118160BSJ-60
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HYB 5118160BSJ-50
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HYB 5117805BSJ-60
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The HYB 5117805BSJ-60 are 16 MBit dynamic RAMs based on the die revisions "G" & "F" and organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon gate process technology, as well as...HYB 5117805BSJ-50
Vendor:Other Category:Other
The HYB 5117805BSJ-50 are 16 MBit dynamic RAMs based on the die revisions "G" & "F" and organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon gate process technology, as well as...HYB 5117800BSJ-70
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HYB 5117800BSJ-60
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HYB 5117800BSJ-50
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HYB 5117405BJ-60
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<FONT face=Verdana>The HYB 5117405BJ-60 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate...HYB 5117405BJ-50
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 5117405BJ-50 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate...HYB 5116405BJ-60
Vendor:Other Category:Other
The HYB 5116405BJ-60 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as w...HYB 5116405BJ-50
Vendor:Other Category:Other
The HYB 5116405BJ-50 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as w...HYB 511000BJL
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HYB 511000BJ
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HYB 5(3)117800
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The HYB 5(3)117800 are 16 MBit dynamic RAMs based on the die revisions "G" & "F" and organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon gate process technology, as well as ad...HYB 39S64800BT-8
Vendor:Other Category:Other
The HYB 39S64400/HYB 39S64800BT-8/160BT are four bank Synchronous DRAM's organized as 4 banks * 4MBit *4, 4 banks * 2 MBit *8 and 4 banks * 1 Mbit *16 respectively. These synchronous devices achieve high speed data trans...HYB 39S64800BT-7.5
Vendor:Other Category:Other
The HYB 39S64800BT-7.5 are four bank Synchronous DRAM's organized as 4 banks * 4MBit *4, 4 banks * 2 MBit *8 and 4 banks * 1 Mbit *16 respectively. These synchronous devices achieve high speed data transfer rates by empl...HYB 39S64400BT-8
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The HYB 39S64400BT-8 are four bank Synchronous DRAM's organized as 4 banks * 4MBit *4, 4 banks * 2 MBit *8 and 4 banks * 1 Mbit *16 respectively. These synchronous devices achieve high speed data transfer rates by employ...HYB 39S64400BT-7.5
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The HYB 39S64400BT-7.5 are four bank Synchronous DRAM's organized as 4 banks * 4MBit *4, 4 banks * 2 MBit *8 and 4 banks * 1 Mbit *16 respectively. These synchronous devices achieve high speed data transfer rates by empl...HYB 39S256800T
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The HYB 39S256800T are four bank Synchronous DRAM's organized as 4 banks * 16 MBit * 4, 4 banks * 8 MBit * 8 and 4 banks * 4 MBit * 16 respectively. These synchronous devices achieve high speed data transfer rates for C...HYB 39S256400T
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The HYB 39S256400T are four bank Synchronous DRAM's organized as 4 banks * 16 MBit * 4, 4 banks * 8 MBit * 8 and 4 banks * 4 MBit * 16 respectively. These synchronous devices achieve high speed data transfer rates for C...HYB 39S256160T
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The HYB 39S256160T are four bank Synchronous DRAM's organized as 4 banks * 16 MBit * 4, 4 banks * 8 MBit * 8 and 4 banks * 4 MBit * 16 respectively. These synchronous devices achieve high speed data transfer rates for C...HYB 39S16400CT-8
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The HYB 39S16400CT-8 are dual bank Synchronous DRAM's based on SIEMENS 0.25 mm process and organized as 2 banks ´ 2 MBit ´ 4, 2 banks ´ 1 MBit ´ 8 and 2 banks ´ 512 kbit ´ 16 respectiv...HYB 39S16400CT-10
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The HYB 39S16400CT-10/800/160CT are dual bank Synchronous DRAM's based on SIEMENS 0.25 mm process and organized as 2 banks ´ 2 MBit ´ 4, 2 banks ´ 1 MBit ´ 8 and 2 banks ´ 512 kbit ´ 1...HYB 39S128800
Vendor:Other Category:Other
The HYB 39S128400/HYB 39S128800/160CT are four bank Synchronous DRAM's organized as 4 banks * 8MBit x4, 4 banks * 4MBit x8 and 4 banks * 2Mbit x16 respectively. These synchronous devices achieve high speed data transfer ...HYB 39S128400
Vendor:Other Category:Other
The HYB 39S128400/800/160CT are four bank Synchronous DRAM's organized as 4 banks * 8MBit x4, 4 banks * 4MBit x8 and 4 banks * 2Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates by e...HYB 39S128160CT(L)
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The HYB 39S128400/800/HYB 39S128160CT(L) are four bank Synchronous DRAM's organized as 4 banks * 8MBit x4, 4 banks * 4MBit x8 and 4 banks * 2Mbit x16 respectively. These synchronous devices achieve high speed data transf...HYB 3165805J-60
Vendor:Other Category:Other
This HYB 3165805J-60 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desi...HYB 3165805J-50
Vendor:Other Category:Other
This HYB 3165805J-50 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desi...HYB 3165800J-50
Vendor:Other Category:Other
This device HYB 3165800J-50 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in SIEMENS/IBM's most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and pr...HYB 3165405J-50
Vendor:Other Category:Other
This HYB 3165405J-50 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process de...HYB 3165405BJ-40
Vendor:Other Category:Other
This HYB 3165405BJ-40 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS' most advanced 0,25 m m-CMOS silicon gate process technology. The circuit and process design allow this d...HYB 3165165T(L) -60
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HYB 3164805J-60
Vendor:Other Category:Other
This HYB 3164805J-60 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desi...HYB 3164805J-50
Vendor:Other Category:Other
This HYB 3164805J-50 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desi...HYB 3164800J-60
Vendor:Other Category:Other
This device HYB 3164800J-60 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in SIEMENS/IBM's most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and pr...HYB 3164800J-50
Vendor:Other Category:Other
This device HYB 3164800J-50 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in SIEMENS/IBM's most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and pr...HYB 3164405J-50
Vendor:Other Category:Other
This HYB 3164405J-50 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process de...HYB 3164405BJ-40
Vendor:Other Category:Other
This HYB 3164405BJ-40 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS' most advanced 0,25 m m-CMOS silicon gate process technology. The circuit and process design allow this d...HYB 3164165BT(L) -60
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HYB 3164165BT(L) -50
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HYB 3164165BT(L) -40
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HYB 3164165ATL-60
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This device HYB 3164165ATL-60 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process ...HYB 3164165ATL-50
Vendor:Other Category:Other
This device HYB 3164165ATL-50 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process ...HYB 3164165AT-60
Vendor:Other Category:Other
This device HYB 3164165AT-60 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process d...HYB 3164165AT-50
Vendor:Other Category:Other
This device HYB 3164165AT-50 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process d...HYB 3164165AT-40
Vendor:Other Category:Other
This device HYB 3164165AT-40 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process d...HYB 3164165AT(L) -60
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HYB 3164165AT(L) -50
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HYB 3164165AT(L) -40
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HYB 3164160AT-40
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This device HYB 3164160AT-40 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and process ...HYB 314405BJL-70
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The HYB 314405BJL-70 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margi...HYB 314405BJL-60
Vendor:Other Category:Other
The HYB 314405BJL-60 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margi...HYB 314405BJL-50
Vendor:Other Category:Other
The HYB 314405BJL-50 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margi...HYB 314405BJ-70
Vendor:Other Category:Other
The HYB 314405BJ-70 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margin...HYB 314405BJ-60
Vendor:Other Category:Other
The HYB 314405BJ-60 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margin...HYB 314405BJ-50
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The HYB 314405BJ-50 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margin...HYB 314400BJ-60
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The HYB 314400BJ-60 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.The HYB 314400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, bo...HYB 314400BJ-50
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The HYB 314400BJ-50 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.The HYB 314400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, bo...HYB 314175BJL-65
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The HYB 314175BJL-65 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margin...HYB 314175BJL-60
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The HYB HYB 314175BJL-60 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation m...HYB 314175BJL-55
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The HYB HYB 314175BJL-55 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation m...HYB 314175BJL-50
Vendor:Other Category:Other
The HYB HYB 314175BJL-50 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation m...HYB 314175BJ-65
Vendor:Other Category:Other
The HYB 314175BJ-65 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins...HYB 314175BJ-60
Vendor:Other Category:Other
The HYB 314175BJ-60 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margin...HYB 314175BJ-55
Vendor:Other Category:Other
The HYB 314175BJ-55 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margin...HYB 314175BJ-50
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The HYB 314175BJ-50 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margin...HYB 314171BJL-70
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The HYB 314171BJL-70 is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both in...HYB 314171BJL-60
Vendor:Other Category:Other
The HYB 314171BJL-60 is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both in...HYB 314171BJL-50
Vendor:Other Category:Other
The HYB 314171BJL-50 is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both in...HYB 314171BJ-70
Vendor:Other Category:Other
The HYB 314171BJ-60 is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both int...HYB 314171BJ-60
Vendor:Other Category:Other
The HYB HYB 314171BJ-60 is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both...HYB 314171BJ-50
Vendor:Other Category:Other
The HYB HYB 314171BJ-50 is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both...HYB 314100BJL-70
Vendor:Other Category:Other
The HYB HYB 314100BJL-70 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation ma...HYB 314100BJL-60
Vendor:Other Category:Other
The HYB 314100BJL-60 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margin...HYB 314100BJL-50
Vendor:Other Category:Other
The HYB 314100BJL-50 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margin...HYB 314100BJ-70
Vendor:Other Category:Other
The HYB 314100BJ-70 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins...HYB 314100BJ-60
Vendor:Other Category:Other
The HYB 314100BJ-60 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins...HYB 314100BJ-50
Vendor:Other Category:Other
The HYB 314100BJ-50 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins...HYB 3118165BSJ
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HYB 3118160BSJ-60
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HYB 3118160BSJ-50
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HYB 3117405BJ/BT-60
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<FONT face=Verdana>The HYB 3117405BJ/BT-60 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon g...HYB 3117405BJ/BT-50
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 3117405BJ/BT-50 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon g...HYB 3116405BJ/BT(L)-60
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 3116405BJ/BT(L)-60 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silico...HYB 3116405BJ/BT(L)-50
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 3116405BJ/BT(L)-50 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silico...HY92-12LF
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The HY92-12LF is a 90-degree hybrid tuned for the 0.880.96 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 sur...HY92-12
Mfg:ALPHA Vendor:Other Category:Other
The HY92-12 is a 90 degree hybrid tuned for the 0.880.96 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 leade...HY86-12LF
Vendor:Other Category:Other
90 Degree Hybrid The HY86-12LF is a 90 degree hybrid tuned for the 0.820.90 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available...HY86-12
Mfg:ALPHA Pack:SMD-8 Vendor:Other Category:Other
The HY86-12 is a 90 degree hybrid tuned for the 0.820.90 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 leade...HY7-P
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HY-7110
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The HY-7110 is a miniature proportionally controlled heater whose temperature can be programmed with a single external resistor. This device is ideally suited for regulating the temperature of sensitive electronic compon...HY64UD16322M
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The HY64UD16322M is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The operates in the extended ...HY64UD16322A
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The HY64UD16322A is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The operates in the extended ...HY64UD16162M
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The HY64UD16162M is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended ...