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HYB18T1G800C2C-25F,HYB18T1G800BFL,HYB 514175BJ-55,
HYB18T1G800C2C-25F
Vendor:Other Category:Other
HYB18T1G800BFL
Vendor:Other Category:Other
The 1-Gbit DDR2 DRAM HYB18T1G800BFL is a high-speed Double-Data-Rate- Two CMOS Synchronous DRAM device, containing 1,073,741,824 bits and internally configured as anoctal quadbank DRAM. The 1-Gbit device is organized as ...HYB18T1G800BF-3S
Vendor:Other Category:Other
HYB18T1G800BF-3.7
Mfg:Qimonda Vendor:Other Category:Other
HYB18T1G800BF-3
Vendor:Other Category:Other
HYB18T1G800BF-2.5
Vendor:Other Category:Other
HYB18T1G800BC-2.5
Vendor:Other Category:Other
HYB18T1G800AF
Vendor:Other Category:Other
The 1Gb Double-Data-Rate-2 (DDR2) DRAMs HYB18T1G800AF are high-speed CMOS Double Data Rate 2 Synchronous DRAM devices con-taining 1,073,741,824 bits and is internally configured as a octal bank DRAM. The 1Gb chip is org...HYB18T1G400CF-3S
Vendor:Other Category:Other
HYB18T1G400CF-3
Vendor:Other Category:Other
HYB18T1G400CF-25F
Vendor:Other Category:Other
HYB18T1G400CF-2.5
Vendor:Other Category:Other
HYB18T1G400C4F-3S
Vendor:Other Category:Other
HYB18T1G400C4F-25F
Vendor:Other Category:Other
HYB18T1G400C2F-3S
Vendor:Other Category:Other
HYB18T1G400C2F-25F
Vendor:Other Category:Other
HYB18T1G400C2F-2.5
Vendor:Other Category:Other
HYB18T1G400C2C-3S
Vendor:Other Category:Other
HYB18T1G400BF-3S
Vendor:Other Category:Other
HYB18T1G400BF-3.7
Vendor:Other Category:Other
HYB18T1G400BF-3
Vendor:Other Category:Other
HYB18T1G400BCL
Vendor:Other Category:Other
The 1-Gbit DDR2 DRAM HYB18T1G400BCL is a high-speed Double-Data-Rate- Two CMOS Synchronous DRAM device, containing 1,073,741,824 bits and internally configured as anoctal quadbank DRAM. The 1-Gbit device is organized as ...HYB18T1G400AF
Vendor:Other Category:Other
The 1Gb Double-Data-Rate-2 (DDR2) DRAMs HYB18T1G400AF are high-speed CMOS Double Data Rate 2 Synchronous DRAM devices con-taining 1,073,741,824 bits and is internally configured as a octal bank DRAM. The 1Gb chip is org...HYB18T1G161C2F-20
Vendor:Other Category:Other
HYB18T1G161C2F-16
Vendor:Other Category:Other
HYB18T1G160CFL-3S
Vendor:Other Category:Other
HYB18T1G160CFL-2.5
Vendor:Other Category:Other
HYB18T1G160CF-3S
Vendor:Other Category:Other
HYB18T1G160CF-3
Vendor:Other Category:Other
HYB18T1G160CF-25F
Vendor:Other Category:Other
HYB18T1G160C4F-3S
Vendor:Other Category:Other
HYB18T1G160C4F-25F
Vendor:Other Category:Other
HYB18T1G160C4F-2.5
Vendor:Other Category:Other
HYB18T1G160C2FL-3S
Vendor:Other Category:Other
HYB18T1G160C2FL-2.5
Vendor:Other Category:Other
HYB18T1G160C2F-3S
Vendor:Other Category:Other
HYB18T1G160C2F-25F
Vendor:Other Category:Other
HYB18T1G160C2F-2.5
Vendor:Other Category:Other
HYB18T1G160C2F-1.9
Vendor:Other Category:Other
HYB18T1G160C2C-3S
Vendor:Other Category:Other
HYB18T1G160C2C-3.7
Vendor:Other Category:Other
HYB18T1G160C2C-2.5
Vendor:Other Category:Other
HYB18T1G160BFL
Vendor:Other Category:Other
The 1-Gbit DDR2 DRAM HYB18T1G160BFL is a high-speed Double-Data-Rate- Two CMOS Synchronous DRAM device, containing 1,073,741,824 bits and internally configured as anoctal quadbank DRAM. The 1-Gbit device is organized as ...HYB18T1G160BF-5
Vendor:Qimonda Category:Integrated Circuits (ICs)
IC DDR2 SDRAM 1GB 84-TFBGAHYB18T1G160BF-3S
Vendor:Other Category:Other
HYB18T1G160BF-3.7
Vendor:Other Category:Other
HYB18T1G160BF-3
Vendor:Other Category:Other
HYB18T1G160BF-2.5
Vendor:Other Category:Other
HYB18T1G160BC-3S
Vendor:Other Category:Other
HYB18T1G160BC-3.7
Vendor:Other Category:Other
HYB18T1G160AF
Vendor:Other Category:Other
The 1Gb Double-Data-Rate-2 (DDR2) DRAMs HYB18T1G160AF are high-speed CMOS Double Data Rate 2 Synchronous DRAM devices con-taining 1,073,741,824 bits and is internally configured as a octal bank DRAM. The 1Gb chip is org...HYB18RL25632AC
Vendor:Other Category:Other
The Infineon 256M Reduced Latency DRAM (RLDRAM) HYB18RL25632AC contains 8 banks x 32 Mb of memory accessible with 32bit or 16bit I/O's in a double data rate (DDR) format where the data is provided and synchronized with a...HYB18RL25616AC
Vendor:Other Category:Other
The Infineon 256M Reduced Latency DRAM (RLDRAM) HYB18RL25616AC contains 8 banks x 32 Mb of memory accessible with 32bit or 16bit I/O's in a double data rate (DDR) format where the data is provided and synchronized with a...HYB18M512160BF-7.5
Mfg:QIMONDA Vendor:Other Category:Other
The HYB18M512160BF-7.5 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM.The HYB18M512160BF-7.5 uses a double-data-rate architecture to achiev...HYB18M512160BF-6
Vendor:Other Category:Other
The HYB18M512160BF-6 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM.The HYB18M512160BF-6 uses a double-data-rate architecture to achieve hi...HYB18M1G320BF7.5
Vendor:Other Category:Other
The HYB18M1G320BF7.5 is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. It isinternally configured as a quad-bank DRAM.The HYB18M1G320BF7.5 uses a double-data-rate architecture to achieve h...HYB18M1G16[0/1]BF6
Vendor:Other Category:Other
The HYB18M1G16[0/1]BF6 is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. It is internally configured as a quad-bank DRAM.The HYB18M1G16[0/1]BF6 uses a double-data-rate architecture to achi...HYB18L512320BF-7.5
Vendor:Other Category:Other
HYB18L512160BF-7.5
Vendor:Other Category:Other
The HYB18L512160BF-7.5 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The HY[B/E]18L512160BF achieves high speed data transfer rates by em...HYB18L256169BF-7.5
D/C:0822+ Vendor:Other Category:Other
The HYB18L256169BF-7.5 is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The HYB18L256169BF-7.5 achieves high speed data transfer rates by emp...HYB18H512321BF-14
Mfg:QIMONDA Pack:BGA D/C:743+ Vendor:Other Category:Other
HYB18H512321BF-12
Mfg:BGA PB Pack:QIMONDA D/C:07+ Vendor:Other Category:Other
HYB18H512321BF-10
Vendor:Other Category:Other
HYB18H512321BF
Vendor:Other Category:Other
The Qimonda 512-Mbit GDDR3 Graphics RAM is a high speed memory device HYB18H512321BF, designed for high bandwidth intensiveapplications like PC graphics systems. The chip's 8 bank architecture is optimized for high speed...HYB18H512321B2F-14
Mfg:FBGA Pack:Infineon D/C:07+ Vendor:Other Category:Other
HYB18H512321B2F-12
Mfg:FBGA Pack:Infineon D/C:07+ Vendor:Other Category:Other
HYB18H256321BF-14
Mfg:Qimonda Pack:BGA D/C:0728+ Vendor:Other Category:Other
HYB18H256321BF-12
Vendor:Other Category:Other
HYB18H256321BF-10
Mfg:QIMONDE Pack:BGA D/C:0742+ Vendor:Other Category:Other
HYB18H1G321AF-14
Vendor:Other Category:Other
HYB18H1G321AF-11
Mfg:Micron D/C:08+ Vendor:Other Category:Other
HYB18H1G321AF-10
D/C:0748+ Vendor:Other Category:Other
HYB18H1G321A2F-10
Vendor:Other Category:Other
HYB18H1G321A2F-08
Vendor:Other Category:Other
HYB-16
Vendor:Other Category:Other
HYB15T2G402C2F-3S
Vendor:Other Category:Other
HYB15T2G402C2F-25F
Vendor:Other Category:Other
HYB15T1G800C2F-3S
Vendor:Other Category:Other
HYB15T1G800C2F-3.7
Vendor:Other Category:Other
HYB15T1G800C2F-25F
Vendor:Other Category:Other
HYB15T1G800C2F-2.5
Vendor:Other Category:Other
HYB15T1G400C2F-3S
Vendor:Other Category:Other
HYB15T1G400C2F-3.7
Vendor:Other Category:Other
HYB15T1G400C2F-25F
Vendor:Other Category:Other
HYB15T1G400C2F-2.5
Vendor:Other Category:Other
HYB15T1G160C2F-3S
Vendor:Other Category:Other
HYB15T1G160C2F-25F
Vendor:Other Category:Other
HYB15T1G160C2F-2.5
Vendor:Other Category:Other
HYB-11
Vendor:Other Category:Other
HYB-1
Mfg:SIRENZA Pack:17 D/C:97+ Vendor:Other Category:Other
HYB 9S13620TQ-8
Vendor:Other Category:Other
The HYB 9S13620TQ-8 are dual bank Synchronous Graphics DRAM's (SGRAM) organized as 2 banks x 256 Kbit x 32 with built-in graphics features. These synchronous devices achieve high speed data transfer rates up to 143 MHz ...HYB 514405BJ
Vendor:Other Category:Other
The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both ...HYB 514400BJ-60
Vendor:Other Category:Other
The HYB 514400BJ-60 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514400BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margin...HYB 514400BJ-50
Vendor:Other Category:Other
The HYB 514400BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514400BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margi...HYB 514265BJ-50
Vendor:Other Category:Other
HYB 514265BJ-45
Vendor:Other Category:Other
HYB 514265BJ-400
Vendor:Other Category:Other
HYB 514265BJ-40
Vendor:Other Category:Other
HYB 514175BJ-60
Vendor:Other Category:Other
The HYB 514175BJ-60 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 514175BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, bo...HYB 514175BJ-55
Vendor:Other Category:Other
The HYB 514175BJ-55 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 514175BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, bo...