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HYB39S256160FT-7,HYB39S256160FF-7,HYB25L256160AC,
HYB39S256160FT-7
Vendor:Other Category:Other
HYB39S256160FF-7
Mfg:INF D/C:06+ Vendor:Other Category:Other
HYB39S256160FEL-7
Vendor:Other Category:Other
HYB39S256160FE-7
Mfg:Qimonda D/C:008+ Vendor:Qimonda (VA) Category:Integrated Circuits (ICs)
IC SDRAM 256MB 54-TSOPHYB39S256160FE-6
Mfg:INF D/C:06+ Vendor:Other Category:Other
HYB39S256160DT(L)
Vendor:Other Category:Other
The HYB39S256160DT(L) are four bank Synchronous DRAM's organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for C...HYB39S256160DC(L)
Vendor:Other Category:Other
The HYB39S256160DC(L) are four bank Synchronous DRAM's organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for C...HYB39S16800BT
Vendor:Other Category:Other
The HYB39S16800BTare dual bank Synchronous DRAM' s based on the die revisions "D", & "E" and organized as 2 banks x 2MBit x4, 2 banks x 1MBit x8 and 2 banks x 512kbit x16 respectively. These synchronous devices achie...HYB39S16800AT-8
Mfg:INF D/C:03+ Vendor:Other Category:Other
The HYB39S16800AT-8 are dual bank Synchronous DRAM's based on the die revisions "B" and "C" and organized as 2 banks ´ 2 MBit ´ 4, 2 banks ´ 1 MBit ´ 8 and 2 banks ´ 512 kBit ´ 16 resp...HYB39S16800
Vendor:Other Category:Other
The HYB39S16800 are dual bank Synchronous DRAM's based on the die revisions "B" and "C" and organized as 2 banks ´ 2 MBit ´ 4, 2 banks ´ 1 MBit ´ 8 and 2 banks ´ 512 kBit ´ 16 respecti...HYB39S16400BT
Vendor:Other Category:Other
The HYB39S16400BT are dual bank Synchronous DRAM' s based on the die revisions "D", & "E" and organized as 2 banks x 2MBit x4, 2 banks x 1MBit x8 and 2 banks x 512kbit x16 respectively. These synchronous devices achi...HYB39S16400AT-10
Mfg:SIEMENS Pack:SMD Vendor:Other Category:Other
The HYB39S16400AT-10 are dual bank Synchronous DRAM's based on the die revisions "B" and "C" and organized as 2 banks ´ 2 MBit ´ 4, 2 banks ´ 1 MBit ´ 8 and 2 banks ´ 512 kBit ´ 16 res...HYB39S16400
Vendor:Other Category:Other
The HYB39S16400/80x/16xAT are dual bank Synchronous DRAM's based on the die revisions "B" and "C" and organized as 2 banks ´ 2 MBit ´ 4, 2 banks ´ 1 MBit ´ 8 and 2 banks ´ 512 kBit ´ 1...HYB39S16160CT-7
Mfg:INFINEON Pack:TSOP-50 Vendor:Other Category:Other
The HYB39S16160CT-6/HYB39S16160CT-7 are high speed dual bank Synchronous DRAM's based on SIEMENS 0.25mm process and organized as 2 banks x 512kbit x 16. These synchronous devices achieve high speed data transfer rates up...HYB39S16160CT-6
Mfg:INFINEON Pack:TSOP-50 Vendor:Other Category:Other
The HYB39S16160CT-6/-7 are high speed dual bank Synchronous DRAM's based on SIEMENS 0.25mm process and organized as 2 banks x 512kbit x 16. These synchronous devices achieve high speed data transfer rates up to 166 MHz b...HYB39S16160BT
Vendor:Other Category:Other
The HYB39S16400/800/HYB39S16160BT are dual bank Synchronous DRAM' s based on the die revisions "D", & "E" and organized as 2 banks x 2MBit x4, 2 banks x 1MBit x8 and 2 banks x 512kbit x16 respectively. These synchron...HYB39S13620TQ-7
Vendor:Other Category:Other
The HYB39S13620TQ-7 are dual bank Synchronous Graphics DRAM's (SGRAM) organized as 2 banks x 256 Kbit x 32 with built-in graphics features. These synchronous devices achieve high speed data transfer rates up to 143 MHz ...HYB39S13620TQ-6
Vendor:Other Category:Other
The HYB HYB39S13620TQ-6 are dual bank Synchronous Graphics DRAM's (SGRAM) organized as 2 banks x 256 Kbit x 32 with built-in graphics features. These synchronous devices achieve high speed data transfer rates up to 143 ...HYB39S128800FT-7
Vendor:Other Category:Other
HYB39S128800FE-7
Mfg:INF D/C:06+ Vendor:Qimonda Category:Integrated Circuits (ICs)
IC SDRAM 128MB 54-TSOPHYB39S128407FE
Vendor:Other Category:Other
The HYB39S128407FE are four bank Synchronous DRAM's organized as 32 MBit x4, 16 MBit x8 and 8 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip ...HYB39S128400FL
Vendor:Other Category:Other
The HYB39S128400FL are four bank Synchronous DRAM's organized as 32 MBit x4, 16 MBit x8 and 8 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip ...HYB39S128400FE-7
Mfg:INF D/C:06+ Vendor:Other Category:Other
HYB39S128160FT-7
Vendor:Other Category:Other
HYB39S128160FE-7
Mfg:Qimonda D/C:08+ Vendor:Qimonda (VA) Category:Integrated Circuits (ICs)
IC SDRAM 128MB 54-TSOPHYB39L256160ACT
Vendor:Other Category:Other
The HYB39L256160ACT Mobile-RAM is a new generation of low power, four bank Synchronous DRAM's organized as 4 banks x 4Mbit x 16. These synchronous Mobile-RAMs achieve high speed data transfer rates by employing a chip ar...HYB39L256160AC
Vendor:Other Category:Other
The HYB39L256160AC Mobile-RAM is a new generation of low power, four bank Synchronous DRAM's organized as 4 banks x 4Mbit x 16. These synchronous Mobile-RAMs achieve high speed data transfer rates by employing a chip arc...HYB3166160AT(L)-60
Vendor:Other Category:Other
This device HYB3166160AT(L)-60 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3166160AT(L)-50
Vendor:Other Category:Other
This device HYB3166160AT(L)-50 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3166160AT(L)-40
Vendor:Other Category:Other
This device HYB3166160AT(L)-40 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3165800J
Vendor:Other Category:Other
HYB3165800AT
Vendor:Other Category:Other
This device HYB3165800AT is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process desi...HYB3165800AJ
Vendor:Other Category:Other
This device HYB3165800AJ is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process desi...HYB3165165T-50
Vendor:Other Category:Other
This HYB3165165T-50 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desi...HYB3165165T(L) -50
Vendor:Other Category:Other
HYB3165160T-60
Vendor:Other Category:Other
This device HYB3165160T-60 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and proc...HYB3165160T-50
Vendor:Other Category:Other
This device HYB3165160T-50 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and proc...HYB3165160AT(L)-60
Vendor:Other Category:Other
This device HYB3165160AT(L)-60 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3165160AT(L)-50
Vendor:Other Category:Other
This device HYB3165160AT(L)-50 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3165160AT(L)-40
Vendor:Other Category:Other
This device HYB3165160AT(L)-40 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3164805T
Vendor:Other Category:Other
This HYB3164805T is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design a...HYB3164805L
Vendor:Other Category:Other
This HYB3164805L is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design a...HYB3164805J-60
Vendor:Other Category:Other
This HYB3164805J-60 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desig...HYB3164805J-50
Vendor:Other Category:Other
This HYB3164805J-50 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desig...HYB3164805J
Vendor:Other Category:Other
This HYB3164805J is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design a...HYB3164805AT(L)-40
Vendor:Other Category:Other
HYB3164805AJ-60
Vendor:Other Category:Other
HYB3164805AJ-50
Vendor:Other Category:Other
HYB3164805AJ
Vendor:Other Category:Other
HYB3164800J
Vendor:Other Category:Other
HYB3164800ATL
Vendor:Other Category:Other
This device HYB3164800ATL is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process des...HYB3164800AT60
Vendor:Other Category:Other
This device HYB3164800AT60 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and proc...HYB3164800AT50
Vendor:Other Category:Other
This device HYB3164800AT50 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and proc...HYB3164800AT40
Vendor:Other Category:Other
This device HYB3164800AT40 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and proc...HYB3164800AT
Vendor:Other Category:Other
This HYB3164800AT device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process desi...HYB3164800AJ60
Vendor:Other Category:Other
This device HYB3164800AJ60 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and proc...HYB3164800AJ50
Vendor:Other Category:Other
This device HYB3164800AJ50 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and proc...HYB3164800AJ40
Vendor:Other Category:Other
This device HYB3164800AJ40 is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and proc...HYB3164800AJ
Vendor:Other Category:Other
This device HYB3164800AJ is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process desi...HYB3164405AJ-40
Vendor:Other Category:Other
This HYB3164405AJ-40 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35m-CMOS silicon gate process technology. The circuit and process design al...HYB3164400J
Vendor:Other Category:Other
This device HYB3164400J is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process...HYB3164400AT60
Vendor:Other Category:Other
This device HYB3164400AT60 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and pro...HYB3164400AT50
Vendor:Other Category:Other
This device HYB3164400AT50 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and pro...HYB3164400AT40
Vendor:Other Category:Other
This device HYB3164400AT40 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and pro...HYB3164400AJ60
Vendor:Other Category:Other
This device HYB3164400AJ60 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and pro...HYB3164400AJ50
Vendor:Other Category:Other
This device HYB3164400AJ50 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and pro...HYB3164400AJ40
Vendor:Other Category:Other
This device HYB3164400AJ40 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and pro...HYB3164165T-50
Vendor:Other Category:Other
This HYB3164165T-50 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process desi...HYB3164165T(L) -60
Vendor:Other Category:Other
HYB3164165T(L) -50
Vendor:Other Category:Other
HYB3164165AT-40
Vendor:Other Category:Other
This device is a 64 MBit dynamic RAM HYB3164165AT-40 organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process de...HYB3164160T-60
Vendor:Other Category:Other
This device HYB3164160T-60 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and proc...HYB3164160T-50
Vendor:Other Category:Other
This device HYB3164160T-50 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and proc...HYB3164160AT(L)-60
Vendor:Other Category:Other
This device HYB3164160AT(L)-60 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3164160AT(L)-50
Vendor:Other Category:Other
This device HYB3164160AT(L)-50 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB3164160AT(L)-40
Vendor:Other Category:Other
This device HYB3164160AT(L)-40 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and proces...HYB314405BJL
Vendor:Other Category:Other
The HYB314405BJL is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, ...HYB314405BJ
Vendor:Other Category:Other
The HYB314405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, b...HYB3118160BST-70
Vendor:Other Category:Other
The HYB3118160BST-70 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid...HYB3118160BST-50
Mfg:INF D/C:03+ Vendor:Other Category:Other
The HYB3118160BST-50 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid...HYB3118160BSJ-50
Mfg:INF D/C:03+ Vendor:Other Category:Other
The HYB3118160BSJ-50 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid...HYB3117805BSJ -70
Vendor:Other Category:Other
The HYB3117805BSJ -70 is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ...HYB3117805BSJ -60
Vendor:Other Category:Other
The HYB3117805BSJ -60 is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ...HYB3117805BSJ -50
Vendor:Other Category:Other
The HYB3117805BSJ -50 is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ...HYB3117800BSJ-70
Vendor:Other Category:Other
The HYB3117800BSJ-70 is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ope...HYB3117800BSJ-60
Vendor:Other Category:Other
The HYB3117800BSJ-60 is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ope...HYB3117800BSJ-50
Vendor:Other Category:Other
The HYB3117800BSJ-50 is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ope...HYB3117405BJ/BT(L)-70
Vendor:Other Category:Other
The HYB3117405BJ/BT(L)-70 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...HYB3117405BJ/BT(L)-60
Vendor:Other Category:Other
The HYB3117405BJ/BT(L)-60 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...HYB3117405BJ/BT(L)-50
Vendor:Other Category:Other
The HYB3117405BJ/BT(L)-50 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...HYB3116405BJ/BT(L)-70
Vendor:Other Category:Other
The HYB3116405BJ/BT(L)-70 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...HYB3116405BJ/BT(L)-60
Vendor:Other Category:Other
The HYB3116405BJ/BT(L)-60 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...HYB3116405BJ/BT(L)-50
Vendor:Other Category:Other
The HYB3116405BJ/BT(L)-50 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...HYB3116165BST-60
Vendor:Other Category:Other
The HYB3116165BST-60 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. It utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margin...HYB3116160BSJ-70
Vendor:Other Category:Other
The HYB3116160BSJ-70 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid...HYB3116160BSJ-60
Vendor:Other Category:Other
The HYB3116160BSJ-60 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid...HYB3116160BSJ-50
Vendor:Other Category:Other
The HYB3116160BSJ-50/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to pr...HYB-3
Mfg:SIRENZA Pack:17 D/C:98+ Vendor:Other Category:Other
HYB25L256160AF
Vendor:Other Category:Other
The 256MBit Mobile-RAM HYB25L256160AF is a new generation of low power, four bank synchronous DRAM organized as 4 banks x 4 Mbit x 16 with additional features for mobile applications. The synchronous Mobile-RAM achieve...HYB25L256160AC
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
The 256-Mbit Mobile-RAM HYB25L256160AC is a new generation of low power, four bank synchronous DRAM organized as 4 banks x 4 Mbit x 16 with additional features for mobile applications. The synchronous Mobile-RAM achieves...