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Mfg:MT Vendor:Other Category:Other
The Mitel MT8815 is fabricated in MITEL's ISOCMOS technology providing low power dissipation and high reliability. The device contains a 8 x 12 array of crosspoint switches along with a 7 to 96 line decoder and latch cir...
Mfg:METEL D/C:1450
Vendor:Other Category:Other
The Mitel MT8814 is fabricated in MITEL's ISOCMOS technology providing low power dissipation and high reliability. The device contains a 8 x 12 array of crosspoint switches along with a 7 to 96 line decoder and latch cir...
Mfg:ZARLINK Pack:PLCC Vendor:Other Category:Other
The Mitel MT8812 is fabricated in MITEL's ISOCMOS technology providing low power dissipation and high reliability. The device contains a 8 x12 array of crosspoint switches along with a 7 to 96 line decoder and latch circ...
Mfg:MT Pack:PLCC28 D/C:07/08+ Vendor:Other Category:Other
The Mitel MT8809 is fabricated in MITEL's ISOCMOS technology providing low power dissipation and high reliability. The device contains a 8 x 8 array of crosspoint switches along with a 6 to 64 line decoder and latch circ...
Vendor:Other Category:Other
The Mitel MT8808 is fabricated in MITEL's ISOCMOS technology providing low power dissipation and high reliability. The device contains a 8 x 8 array of crosspoint switches along with a 6 to 64 line decoder and latch circ...
Pack:DIP20 Vendor:Other Category:Other
The Mitel MT8806 is fabricated in MITEL's ISOCMOS technology providing low power dissipation and high reliability. The device contains a 8 x 4 array of crosspoint switches along with a 5 to 32 line decoder and latch circ...
Vendor:Other Category:Other
The MT8804A is a CMOS/LSI 8 x 4 Analog Switch Array incorporating control memory (32 bits), decoder and digital logic level converters. This circuit has digitally controlled analog switches having very low "ON" resistanc...
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The MT8293AE is High Performance Infrared TOP IR LED. It consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 15mW typical of output power. It emits a spectral band of radiation at 820nm.
The...
Vendor:Other Category:Other
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Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
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TV tuner module MT7403 for hybrid (analog/digital) terrestrial TV standards
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
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Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
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Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
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Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
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Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
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The MT70014 consists of two independent channels each of which functions as a parallel to serial data converter.The parallel data of MT70014 is loaded via an 8-bit input highway and the serial output is generated in the ...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The MT6P07T is designed for VHF-UHF band low noise amplifier applications.When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic e...
Vendor:Other Category:Other
The MT6P07E is designed for VHF-UHF band low noise amplifier applications.When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic e...
Vendor:Other Category:Other
The MT6P06T is designed for VHF-UHF band low noise amplifier applications.When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic e...
Vendor:Other Category:Other
Features of the MT6P06E is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6P06E can be summarized as:(1):the characteristic is collector-base voltage...
Vendor:Other Category:Other
The MT6P04AT is designed for VHF-UHF band low noise amplifier applications.When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic ...
Vendor:Other Category:Other
Features of the MT6P04AE is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6P04AE can be summarized as:(1):the characteristic is collector-base volta...
Vendor:Other Category:Other
Features of the MT6P03AE is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6P03AE can be summarized as:(1):the characteristic is collector-base volta...
Vendor:Other Category:Other
Vendor:Other Category:Other
The maximum ratings of the MT6L62AE can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 10,the unit is V;(2):the characteristic is collector-emittre voltage,the symbol i...
Mfg:Toshiba Pack:SOT363 D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:toS Pack:SOT-23-5 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Features of the MT6L57AE is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6L57AE can be summarized as:(1):the characteristic is collector-base volta...
Vendor:Other Category:Other
Features of the MT6L52AE is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6L52AE can be summarized as:(1):the characteristic is collector-base volta...
Vendor:Other Category:Other
Features of the MT6L51AE is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6L51AE can be summarized as:(1):the characteristic is collector-base volta...
Vendor:Other Category:Other
Features of the MT6L50AE is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6L50AE can be summarized as:(1):the characteristic is collector-base volta...
Vendor:Other Category:Other
Features of the MT6C06E is two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6.
The maximum ratings of the MT6C06E can be summarized as:(1):the characteristic is collector-base voltage...
Vendor:Other Category:Other
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Mfg:SANKEN Pack:DIP D/C:02+ Vendor:Other Category:Other
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Mfg:N/A Pack:CDIP D/C:N/A Vendor:Other Category:Other
The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM's have equal access and cycle times. For flexibility in high-speed memory applications, ...
Mfg:MT Pack:DIP-22 D/C:9407+ Vendor:Other Category:Other
The Austin Semiconductor SRAM family MT5C6404 employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon t...
Vendor:Other Category:Other
The Austin Semiconductor SRAM family MT5C6401 employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon t...
Mfg:MT Pack:DIP Vendor:Other Category:Other
Vendor:Other Category:Other
The Austin Semiconductor SRAM family MT5C2565 employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon t...
Vendor:Other Category:Other
The Austin Semiconductor SRAM family MT5C2564 employs high-speed, low-power CMOS and are fabricated using double-layer metal, double-layer polysilicon technology.For flexibility in high-speed memory applications,Austin S...
Vendor:Other Category:Other
The MT5C1009 is a 1,048,576-bit high-speed CMOS static RAM organized as 131,072 words by 8 bits. This device uses 8 common input and output lines and has an output enable pin which operate faster than address access time...
Vendor:Other Category:Other
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.For design flexibility in high-speed memo...
Vendor:Other Category:Other
The MT5C1001 employs low power, high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for great...
Vendor:Other Category:Other
The MT5C1008 SRAM MT5C 1008 employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.For design flexibility in high-...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58V512V36D employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 16Mb SyncBurst SRAMs MT58V512V36D integrate a 1 Meg x 18, 51...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58V512V32D employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 16Mb SyncBurst SRAMs MT58V512V32D integrate a 1 Meg x 18, 51...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58V1MV18D employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 16Mb SyncBurst SRAMs MT58V1MV18D integrate a 1 Meg x 18, 512K...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L64L36D employs high- speed, low-power CMOS designs that are fabri-cated using an advanced CMOS process.Micron's 2Mb SyncBurst SRAMs MT58L64L36D integrate a 128K x 18, 64K...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L64L32F employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 2Mb SyncBurst SRAMs MT58L64L32F integrate a 128K x 18, 64K x...
Mfg:MICRON Pack:N/A D/C:09+ Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L64L32D employs high- speed, low-power CMOS designs that are fabri-cated using an advanced CMOS process.Micron's 2Mb SyncBurst SRAMs MT58L64L32D integrate a 128K x 18, 64K...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L512Y36D employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 16Mb SyncBurst SRAMs MT58L512Y36D integrate a 1 Meg x 18, 51...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L512Y32D employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 16Mb SyncBurst SRAMs MT58L512Y32D integrate a 1 Meg x 18, 51...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L256L18D1 employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 4Mb SyncBurst SRAMs MT58L256L18D1 integrate a 256K x 18, 1...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L1MY18D employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 16Mb SyncBurst SRAMs MT58L1MY18D integrate a 1 Meg x 18, 512K...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L128L36D1 employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 4Mb SyncBurst SRAMs MT58L128L36D1 integrate a 256K x 18, 1...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L128L32D1 employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 4Mb SyncBurst SRAMs MT58L128L32D1 integrate a 256K x 18, 1...
Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L128L18F employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.Micron's 2Mb SyncBurst SRAMs MT58L128L18F integrate a 128K x 18, 64K...
Mfg:MICRONAS Pack:QFP D/C:99+ Vendor:Other Category:Other
The Micron® SyncBurst™ SRAM family MT58L128L18D employs high- speed, low-power CMOS designs that are fabri-cated using an advanced CMOS process.Micron's 2Mb SyncBurst SRAMs MT58L128L18D integrate a 128K x 18, 6...
Vendor:Other Category:Other
The MT5750 consists of a gallium arsenide infrared emitting diode coupled with a slllcon photo darlingtan in a dual in-line package. It can be used in AC lineidigital logic isolator, digital logic/digital logic isolator,...
Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L512V18P employs high-speed, low-power CMOS designs using an advanced CMOS process.Micron's 8Mb ZBT SRAMs MT55L512V18P integrate a 512K x 18,256K x 32...
Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L512L36P employs high-speed, low-power CMOS designs using an advanced CMOS process. Micron's 8Mb ZBT SRAMs MT55L512L36P integrate a 512K x 18, 256K x ...
Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L512L32P employs high-speed, low-power CMOS designs using an advanced CMOS process. Micron's 8Mb ZBT SRAMs MT55L512L32P integrate a 512K x 18, 256K x ...
Mfg:N/A Pack:. D/C:08+ Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L512L18P employs high-speed, low-power CMOS designs using an advanced CMOS process. Micron's 8Mb ZBT SRAMs MT55L512L18P integrate a 512K x 18, 256K x ...
Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L256V36P employs high-speed, low-power CMOS designs using an advanced CMOS process.Micron's 8Mb ZBT SRAMs MT55L256V36P integrate a 512K x 18,256K x 32...
Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L256V32P employs high-speed, low-power CMOS designs using an advanced CMOS process.Micron's 8Mb ZBT SRAMs MT55L256V32P integrate a 512K x 18,256K x 32...
Mfg:N/A Pack:TQFP D/C:00+ Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L256L36P employs high-speed, low-power CMOS designs using an advanced CMOS process.Micron's 8Mb ZBT SRAMs MT55L256L36P integrate a 512K x 18,256K x 32...
Vendor:Other Category:Other
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM family MT55L256L32P employs high-speed, low-power CMOS designs using an advanced CMOS process.Micron's 8Mb ZBT SRAMs MT55L256L32P integrate a 512K x 18,256K x 32...
Vendor:Other Category:Other
The MT550-AUR is designed as 20chip T-1 3/4 LED lamps. It has two pins and the longth one has he function of anode and the other is cathode.MT550-AUR has four features. (1) It would have 2-chip series connection. (2) Its...
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