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MT54W4MH8B,MT5491-YG,MT48LC2M32B2TG-7,
MT54W4MH8B
Vendor:Other Category:Other
The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM MT54W4MH8B employs high-speed, lowpower CMOS designs using an advanced 6T CMOS process.The QDR architecture of MT54W4MH8B consists of...MT5491-YG
Vendor:Other Category:Other
MT5491-URG
Vendor:Other Category:Other
MT5491-RG
Vendor:Other Category:Other
MT5491-HRG-A
Vendor:Other Category:Other
MT5491-HRG
Vendor:Other Category:Other
MT5491A-URG-A
Vendor:Other Category:Other
MT5470-UG
Vendor:Other Category:Other
MT5470B-UR
Vendor:Other Category:Other
MT5470B-OR
Vendor:Other Category:Other
MT5460G
Vendor:Other Category:Other
The MT5460G is designed as infrared LED photo thyristor. Typical applications include control 1A (RMS) of 120Vac line, motor controls, light controls, copier, temperature controls, SSR.MT5460G has six features. (1) Trigg...MT540-HR-A
Vendor:Other Category:Other
MT5351AG
Vendor:Other Category:Other
The MT5351AG is a high performance uncooled optical laser transmitter for CCITT SDH and ANSI SONET applications. It is designed with an ECL/PECL logic interface for 622 MBd transmission. It includes analog outputs which ...MT530-G-A
Vendor:Other Category:Other
MT5260NF−UG
Vendor:Other Category:Other
MT5202
Vendor:Other Category:Other
TV tuner module MT5202 for analog terrestrial TV standardsMT5
Vendor:Other Category:Other
MT4S34U
Mfg:ON Pack:05+ Vendor:Other Category:Other
MT4S32U
Mfg:TOSHIBA Vendor:Other Category:Other
MT4S101T
Vendor:Other Category:Other
MT4S100U
Vendor:Other Category:Other
MT4S100T
Mfg:TOSHIBA Pack:SOT-543 D/C:08+ Vendor:Other Category:Other
MT4S07
Mfg:TOSHIBA Pack:SOT-143 D/C:07+(ROHS) Vendor:Other Category:Other
MT4S06U
Vendor:Other Category:Other
The MT4S06U is a kind of TOSHIBA transistor(silicon NPN epitaxial planar type). MT4S06U has two unique features: (1) low noise figure which is 1.6 dB when VCE is 3 V , Ic is 3 mA and f is 2 GHz; (2) high gain which is 11...MT4S06
Vendor:Other Category:Other
Features of the MT4S06 are:(1)Jlow noise figure:NF=1.6dB(VCE=3V,IC=3mA,f=2GHz);(2)high gain :gain=11.5 dB(VCE=3V,IC=7mA,f=2GHz). The absolute maximum ratings of the MT4S06 can be summarized as:(1):the characteristic is...MT4S04AU
Vendor:Other Category:Other
The MT4S04AU is designed for UHF~VHF band low noise amplifier applications.TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless,semiconductor devices MT4S04AU in general...MT4S04A
Vendor:Other Category:Other
The MT4S04A is designed for UHF~VHF band low noise amplifier applications.TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless,semiconductor devices in general can malfu...MT4S03AU
Vendor:Other Category:Other
Features of the MT4S03AU are:(1)Jlow noise is figure:NF=1.4dB;(2)high gain :gain=9 dB(f=2GHz). The absolute maximum ratings of the MT4S03AU can be summarized as:(1):the characteristic is collector-base voltage,the symb...MT4S03A
Vendor:Other Category:Other
The MT4S03A is designed for UHF~VHF band low noise amplifier applications.TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless,semiconductor devices in general can malfu...MT4LSDT464
Vendor:Other Category:Other
The MT4LSDT464 is a high-speed CMOS,dynamic random-access,32MB,64MB and 128MB memories organized in a 64 configuration. Features of the MT4LSDT464 are:(1)JEDEC standard 144-pin,small-outline,dual in-line memory module;...MT4LDT832H (X)(S)
Vendor:Other Category:Other
MT4LDT464H
Vendor:Other Category:Other
MT4LC8M8P4
Mfg:MT Pack:SOJ Vendor:Other Category:Other
The 8 Meg x 8 DRAM MT4LC8M8P4 is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,3...MT4LC8M8E1
Vendor:Other Category:Other
The 8 Meg x 8 DRAMs MT4LC8M8E1 are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations c...MT4LC8M8C2
Mfg:MT Pack:SOP32 Vendor:Other Category:Other
The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 loca...MT4LC8M8B6
Vendor:Other Category:Other
The 8 Meg x 8 DRAMs MT4LC8M8B6 are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations c...MT4LC4M4E9
Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4LC4M4E9 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). ...MT4LC4M4E8
Mfg:MT D/C:09+ Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4LC4M4E8 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). ...MT4LC4M4B1
Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4LC4M4B1 is a randomly accessed, solid- state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K)....MT4LC4M4A1
Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4LC4M4A1 is a randomly accessed, solid- state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K)....MT4LC4M16R6
Mfg:MICRON Pack:SMT D/C:99+ Vendor:Other Category:Other
The 4 Meg x 16 DRAM MT4LC4M16R6 is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations co...MT4LC4M16N3
Vendor:Other Category:Other
The 4 Meg x 16 DRAM MT4LC4M16N3 is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations co...MT4LC4M16F5
Pack:PLCC Vendor:Other Category:Other
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits organized in a x16 configuration. The MT4LC4M16F5 is functionally organized as 4,194,304 locations containing 16 bi...MT4LC1M16E5
Mfg:MICRON Pack:TSSOP Vendor:Other Category:Other
The 1 Meg x 16 MT4LC1M16E5 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# ...MT4LC1M16C3
Pack:TSOP Vendor:Other Category:Other
The 1 Meg x 16 DRAM MT4LC1M16C3 is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pin...MT4LC16M4T8
Mfg:11000 Pack:MICRON Vendor:Other Category:Other
The 16 Meg x 4 DRAMs are high-speed CMOS,dynamic random-access memory devices contain-ing 67,108,864 bits organized in a x4 configuration. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777,216 location...MT4LC16M4H9
Mfg:MT Pack:TSOP D/C:52 Vendor:Other Category:Other
The 16 Meg x 4 DRAM MT4LC16M4H9 is a high-speed CMOS,dynamic random-access memory device containing67,108,864 bits and designed to operate from 3V to3.6V. The MT4LC16M4H9 and MT4LC16M4G3 arefunctionally organized as 16,7...MT4LC16M4G3
Vendor:Other Category:Other
The 16 Meg x 4 DRAM MT4LC16M4G3 is a high-speed CMOS,dynamic random-access memory device containing67,108,864 bits and designed to operate from 3V to3.6V. The MT4LC16M4H9 and MT4LC16M4G3 arefunctionally organized as 16,7...MT4LC16M4A7
Mfg:MT Pack:TSOP D/C:09+ Vendor:Other Category:Other
The 16 Meg x 4 DRAMs are high-speed CMOS,dynamic random-access memory devices contain-ing 67,108,864 bits organized in a x4 configuration. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777,216 location...MT4C4M4E9
Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4C4M4E9 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). O...MT4C4M4E8
Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4C4M4E8 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). O...MT4C4M4B1
Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4C4M4B1 is a randomly accessed, solid- state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). ...MT4C4M4A1
Vendor:Other Category:Other
The 4 Meg x 4 DRAM MT4C4M4A1 is a randomly accessed, solid- state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). ...MT4C4256883C
Vendor:Other Category:Other
The MT4C4256883C is a kind of randomly accessed solid-state memory. The device contains 1,048,576 bits organized in a 262,144*4 configuration. During READ or WRITE cycles each 4-bit word is uniquely addressed through the...MT4C4007J
Vendor:Other Category:Other
The MT4C4007J is a kind of randomly accessed solid-state memory. The device contains 4,194,304 bits organized in a *4 configuration with optional SELF REFRESH. During READ or WRITE cycles each of the 4 memory bits (1 bit...MT4C4005
Vendor:Other Category:Other
The MT4C4005 is a kind of randomly accessed solid-state memory. The device contains 4,194,304 bits organized in a *4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits, ...MT4C4004J
Vendor:Other Category:Other
The MT4C4004J is a kind of randomly accessed solid-state memory. The device contains 4,194,304 bits organized in a *4 configuration. The 1 Meg*4 DRAM MT4C4004J is unique because each CAS (CAS1 through CAS4) controls its ...MT4C4004
Vendor:Other Category:Other
The MT4C4004 is designed as a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. This 1Meg x4 DRAM is unique in that each CAS controls its corresponding data i/O port in conju...MT4C4003J
Vendor:Other Category:Other
The MT4C4003J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 onfiguration. During READ or WRITE cycles, each bit is uniquely addressed through the 20 address bits, which are entered...MT4C4001JL
Vendor:Other Category:Other
The MT4C4001JL is one member of the MT4C4001 family which is designed as the 2.7V to 5.5V single supply CMOS op amp that is appropriate for low-power battery operated circuits due to the low quiescent current, for A/D Co...MT4C4001J
Vendor:Other Category:Other
The MT4C4001J is designed as a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles, each bit is uniquely addressed through the 20 address bits, whic...MT4C1M16E5
Mfg:MICRON Pack:TSOP Vendor:Other Category:Other
The 1 Meg x 16 MT4C1M16E5 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# a...MT4C1M16C3
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The 1 Meg x 16 DRAM MT4C1M16C3 is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins...MT4C16270
Vendor:Other Category:Other
MT4C1024E
Vendor:Other Category:Other
Features of the MT4C1024E are:(1)industry standard X1 or X4 pin-out, functions and packages;(2)high performance CMOS silicon gate process;(3)single +5V +/-10% power supply;(4)low power, 5mW standby, 175 mW active, typica...MT4C1004J
Vendor:Other Category:Other
MT49H8M36
Vendor:Other Category:Other
The Micron® 288Mb reduced latency DRAM (RLDRAM®) II MT49H8M36 is a high-speed memory device designed for high bandwidth communication data storage-telecommunications, networking, and cache applications, etc. The ...MT49H8M32
Vendor:Other Category:Other
The Micron 256Mb Reduced Latency DRAM RLDRAM) MT49H8M32 contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format where the data is provided and synchronized with different...MT49H32M9FM-2.5
Vendor:Other Category:Other
The MT49H32M9FM-2.5 is designed as one kind of high-speed memory device that can be used in high bandwidth communication data storage, telecommun-ications, networking, and cache applications, etc. Features of the MT49H3...MT49H32M9C
Vendor:Other Category:Other
The Micron® 288Mb reduced latency DRAM (RLDRAM) II MT49H32M9C is a high-speed memory device designed for high bandwidth communication data storage. Applications of MT49H32M9C include, but are not limited to, transmit...MT49H32M9
Vendor:Other Category:Other
The Micron® 288Mb reduced latency DRAM (RLDRAM®) II MT49H32M9 is a high-speed memory device designed for high bandwidth communication data storage-telecommunications, networking, and cache applications, etc. The ...MT49H16M18C
Vendor:Other Category:Other
The Micron® 288Mb reduced latency DRAM (RLDRAM) II MT49H16M18C is a high-speed memory device designed for high bandwidth communication data storage. Applications include, but are not limited to, transmitting or recei...MT49H16M18
Vendor:Other Category:Other
The Micron® 288Mb reduced latency DRAM (RLDRAM®) II MT49H16M18 is a high-speed memory device designed for high bandwidth communication data storage-telecommunications, networking, and cache applications, etc. The...MT49H16M16
Vendor:Other Category:Other
The Micron 256Mb MT49H16M16 Reduced Latency DRAM RLDRAM) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format where the data is provided and synchronized with differen...MT48LC8M8A2
Mfg:11000 Pack:MICRON Vendor:Other Category:Other
The Micron® 64Mb SDRAM MT48LC8M8A2 is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad- bank DRAM with a synchronous interface (all signals are registe...MT48LC8M32B2P-6
Vendor:Other Category:Other
The MT48LC8M32B2P-6 is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits.It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive ...MT48LC8M32B2
Mfg:11000 Pack:MICRON Vendor:Other Category:Other
MT48LC8M16LFFF
Vendor:Other Category:Other
The Micron®128Mb SDRAM MT48LC8M16LFFF is a high-speed CMOS,dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are regis...MT48LC8M16A2TG-75
Vendor:Other Category:Other
The MT48LC8M16A2TG-75 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 134,217,728 bits. MT48LC8M16A2TG-75 is internally configured as a quad-bank DRAM with a synchronous interfac...MT48LC8M16A2P-75
Vendor:Other Category:Other
The MT48LC8M16A2P-75 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 134,217,728 bits. MT48LC8M16A2P-75 is internally configured as a quad-bank DRAM with a synchronous interface....MT48LC8M16A2
Mfg:MT Pack:QFP100 D/C:08+ Vendor:Other Category:Other
The Micron 128Mb SDRAM MT48LC8M16A2 is a high-speed CMOS,dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered ...MT48LC64M8A2
Mfg:NEW Pack:73 D/C:MT Vendor:Other Category:Other
The 512Mb SDRAM MT48LC64M8A2 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a syn- chronous interface (all signals are registered on t...MT48LC4M4A2S-2
Vendor:Other Category:Other
The Micron 16Mb SDRAM MT48LC4M4A2S-2 is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8...MT48LC4M4A1S-2
Vendor:Other Category:Other
The Micron 16Mb SDRAM MT48LC4M4A1S-2 is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8...MT48LC4M32LFFC
Vendor:Other Category:Other
MT48LC4M32B2TG-7
Vendor:Other Category:Other
The MT48LC4M32B2TG-7 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 134,217,728 bits. MT48LC4M32B2TG-7 is internally configured as a quad-bank DRAM with a synchronous interface....MT48LC4M32B2TG-6
Vendor:Other Category:Other
The MT48LC4M32B2TG-6 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 134,217,728 bits. MT48LC4M32B2TG-6 is internally configured as a quad-bank DRAM with a synchronous interface....MT48LC4M32B2P-7
Vendor:Other Category:Other
The MT48LC4M32B2P-7 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 134,217,728 bits. MT48LC4M32B2P-7 is internally configured as a quad-bank DRAM with a synchronous interface.It...MT48LC4M32B2P-6
Vendor:Other Category:Other
The MT48LC4M32B2P-6 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 134,217,728 bits. MT48LC4M32B2P-6 is internally configured as a quad-bank DRAM with a synchronous interface.It...MT48LC4M32B2
Mfg:MIC D/C:07+ Vendor:Other Category:Other
The 128Mb SDRAM MT48LC4M32B2 is a high-speed CMOS, dynamic random-access memory containing 134,217,728-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the...MT48LC4M16A2TG-75
Vendor:Other Category:Other
The MT48LC4M16A2TG-75 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 134,217,728 bits.It is internally configured as a quad-bank DRAM with a synchronous interface. MT48LC4M16A2T...MT48LC4M16A2P-75
Vendor:Other Category:Other
The MT48LC4M16A2P-75 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 67,108,864 bits. It is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along wi...MT48LC4M16A2
Mfg:MICRON Pack:TSSOP Vendor:Other Category:Other
The Micron® 64Mb SDRAM MT48LC4M16A2 is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registe...MT48LC32M4A2
Vendor:Other Category:Other
The Micron® 128Mb SDRAM MT48LC32M4A2 is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are regis...MT48LC32M16A2TG-75
Vendor:Other Category:Other
The MT48LC32M16A2TG-75 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 67,108,864 bits. It is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along ...MT48LC32M16A2P-75
Vendor:Other Category:Other
The MT48LC32M16A2P-75 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 67,108,864 bits. It is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along w...MT48LC32M16A2
Vendor:Other Category:Other
The 512Mb SDRAM MT48LC32M16A2 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a syn- chronous interface (all signals are registered on ...MT48LC2M8A2S-1
Vendor:Other Category:Other
The Micron 16Mb SDRAM MT48LC2M8A2S-1 is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8...MT48LC2M8A1S-1
Vendor:Other Category:Other
The Micron 16Mb SDRAM MT48LC2M8A1S-1 is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8...MT48LC2M32B2TG-7
Vendor:Other Category:Other
The MT48LC2M32B2TG-7 is designed as one kind of high-speed CMOS, dynamic random-access memory which containing 67,108,864 bits. It is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along wi...