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Index K : K4F160411C,K4F151612D,K3012P,
K4F160411C
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160411C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F151612D
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs K4F151612D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Re...K4F151611D
Mfg:SAMSUNG Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs K4F151611D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Re...K4E661612C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E661612C. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E661612B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E661612B. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E661611D
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E661611D. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E660812E
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs K4E660812E. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...K4E660812C
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs K4E660812C. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...K4E660812B
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs K4E660812B. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...K4E660412E
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E660412E. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E660412D
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E660412D. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E660411D
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E660411D. Extended Data Out Mode offers highspeed randomaccess of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access tim...K4E641612C
Mfg:SAMSUNG Pack:EDO Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E641612C. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E641612B
Mfg:SAMSUNG Pack:EDO Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E641612B . Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ...K4E641611D
Mfg:SAMSUNG Pack:TSOP50 Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E641611D. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E640812E
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs K4E640812E. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...K4E640812C
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs K4E640812C. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...K4E640812B
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs K4E640812B. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access ti...K4E640412E
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E640412E. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E640412D
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E640412D. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access t...K4E640411D
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E640411D. Extended Data Out Mode offers highspeed randomaccess of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access tim...K4E171612D
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs K4E171612D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage ...K4E171611D
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs K4E171611D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage ...K4E170812D
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs K4E170812D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (...K4E170811D
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs K4E170811D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (...K4E170412D
Vendor:Other Category:Other
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs K4E170412D . Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage ...K4E170411D
Vendor:Other Category:Other
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs K4E170411D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (...K4E160812D
Mfg:SAMSUNG Pack:TSOP D/C:09+ Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs K4E160812D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (...K4E160811D-BC60
Vendor:Other Category:Other
The K4E160811D-BC60 is designed as one kind of 2,097,152 x 8 bit Extended Data Out CMOS DRAM device that offers high speed random access of memory cells within the same row. And this device is fabricated using Samsung's ...K4E160811D
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs K4E160811D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (...K4E160412D
Vendor:Other Category:Other
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs K4E160412D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (...K4E160411D
Vendor:Other Category:Other
This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs K4E160411D. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (...K4E151612D
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +...K4E151611D
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +...K4D64163HF
Vendor:Other Category:Other
The K4D64163H is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe al...K4D623238B-GC
Vendor:Other Category:Other
The K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG 's high performance CMOS technology. Synchronous features with Data Strobe a...K4D623238B
Vendor:Other Category:Other
The K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe al...K4D553238F-JC
Vendor:Other Category:Other
The K4D553238F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4D553238F-GC
Vendor:Other Category:Other
The K4D553238F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4D553235F-GC
Vendor:Other Category:Other
The K4D553235F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4D551638F-TC
Vendor:Other Category:Other
The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4D551638D-TC
Mfg:NA Pack:N/A D/C:9 Vendor:Other Category:Other
The K4D551638D is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4D28163HD
Vendor:Other Category:Other
The K4D28163HD is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2.097,152 wordsby 16 bits, fabricated with SAMSUNG 's high performance CMOS technology. Synchronous features with Data Strobe...K4D26323RA-GC
Vendor:Other Category:Other
The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe ...K4D26323QG-GC
Vendor:Other Category:Other
The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe ...K4D263238M
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K4D263238 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous features with Data St...K4D263238G-GC
Vendor:Other Category:Other
The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe ...K4D263238F
Mfg:SAMSUNG Vendor:Other Category:Other
The K4D263238F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe ...K4D263238E-GC33
Vendor:Other Category:Other
The K4D263238E-GC33 is designed as one kind of 134,217,728 bits of hyper synchronous data rate Dynamic RAM device that is organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS techno...K4D263238E-GC
Vendor:Other Category:Other
The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe ...K4D263238A-GC33
Vendor:Other Category:Other
The K4D263238A-GC33 is a kind of 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. The maximum frequency i...K4D263238A-GC
Vendor:Other Category:Other
The K4D263238A is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe ...K4D261638F
Vendor:Other Category:Other
The K4D261638F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4D261638E
Vendor:Other Category:Other
The K4D261638E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4C89183AF
Vendor:Other Category:Other
K4C89183AF is a CMOS Double Data Rate Network-DRAM containing 301,989,888 memory cells. K4C89183AF is rganized as 4,194,304-words x 4 banks x18 bits. K4C89183AF feature a fully synchronous operation referenced to clock ...K4C5608/1638C
Vendor:Other Category:Other
K404
Vendor:Other Category:Other
The K401 has one channel in a 4-pin mini-flat SMD package.The K402 has two channels in a 8-pin mini-flat SMD package.The K404 has four channels in a 16-pin mini-flat SMD package.K402
Mfg:HIT Pack:TO-3P D/C:05+ Vendor:Other Category:Other
The K401 has one channel in a 4-pin mini-flat SMD package.The K402 has two channels in a 8-pin mini-flat SMD package.The K404 has four channels in a 16-pin mini-flat SMD package.K401
Mfg:ST Pack:SOT23-5 D/C:N/A Vendor:Other Category:Other
The K401 has one channel in a 4-pin mini-flat SMD package.The K402 has two channels in a 8-pin mini-flat SMD package.The K404 has four channels in a 16-pin mini-flat SMD package.K3S7V2000M-TC
Vendor:Other Category:Other
The K3S7V2000M-TC is a synchronous high bandwidth mask programmable ROM fabricated with SAMSUNG¢s high performance CMOS process technology and is organized either as 4,194,304 x16bit(word mode) or as 2,097,152 x32bi...K3P7V(U)1000B-YC
Vendor:Other Category:Other
The K3P7V(U)1000B-YC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304 x 16 bit(word mode) depending on...K3P6C2000B-SC
Vendor:Other Category:Other
The K3P6C2000B-SC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x16 bit(word mode) or as 1,048,576x32 bit(double word mode) depending o...K3NR
Vendor:Other Category:Other
High-speed, Intelligent Interface Modules with Seven Operating Modes Convert Single or Dual Input Pulses to Display Values K3NRK3958M
Mfg:EPCOS D/C:08+ Vendor:Other Category:Other
K3815
Vendor:Other Category:Other
K3810
Vendor:Other Category:Other
K3641
Vendor:Other Category:Other
These Photocouplers K3641 cosist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN PhotoDarlington transistor in a 6-pin package.K3640
Vendor:Other Category:Other
These Photocouplers K3640 cosist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN PhotoDarlington transistor in a 6-pin package.K3631
Vendor:Other Category:Other
These Photocouplers K3631 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K3630
Vendor:Other Category:Other
These Photocouplers K3630 consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.K3611
Vendor:Other Category:Other
These Photocouplers K3611 consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K3610
Mfg: Pack:89 D/C:DIP Vendor:Other Category:Other
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. K3610K3565M
Vendor:Other Category:Other
K3500G
Vendor:Other Category:Other
This product is not recommended for new designs. Please refer to the M3H product series.K3500G Series, 3.3V Crystal Clock Oscillators - 4-pin Package, Compatible with 8-pin DIL, Tight Symmetry (45/55%) Available, Tri-Sta...K3450K
Vendor:Other Category:Other
K3413-09
Vendor:Other Category:Other
K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25...K3413-08
Vendor:Other Category:Other
K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25...K3413-05
Vendor:Other Category:Other
K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25...K3413-02
Vendor:Other Category:Other
K3413-01,
Vendor:Other Category:Other
K3350K
Vendor:Other Category:Other
K3310
Vendor:Other Category:Other
K3100G
Vendor:Other Category:Other
This product is not recommended for new designs. Please refer to the MHO3 product series.K3100G Series, 3.3V, 14 pin DIP, CMOS, Crystal Clock OscillatorsK3050P series
Vendor:Other Category:Other
The K3050P series consist of a phototriac optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages. Features of the K3050P series are:(1)thickness through insulation; (2)i...K304
Mfg:16 Pack:FUJI D/C:QFN Vendor:Other Category:Other
The K301 has one channel in a 4-pin mini-flat SMD package.The K302 has two channels in a 8-pin mini-flat SMD package.The K304 has four channels in a 16-pin mini-flat SMD package.K3036PG
Mfg:VishaySemicond Pack:05+ Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3036PGK3036P
Mfg:VishaySemicond Pack:05+ Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3036PK303
Mfg:228 Pack:FUJI D/C:QFN Vendor:Other Category:Other
This instrument K303 is used to make accurate and reproducible prints and coatings of a wide range of products on many different subs trates. The heads illustrated are fully interchangeable in a matter of minutes providi...K3023PG
Mfg:TEMIC Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3023PGK3023P
Mfg:VishaySemicond Pack:05+ Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3023PK3022PG
Mfg:VishaySemicond Pack:05+ Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3022PGK3022P
Mfg:VISHAY D/C:08+ Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3022PK3021PG
Pack:DIP Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3021PGK3021P
Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3021PK3020PG
Pack:DIP-6 Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3020PGK3020P(G)
Vendor:Other Category:Other
The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar techn...K3020P
Mfg:VishaySemicond Pack:N/A D/C:03+ Vendor:Other Category:Other
Optocoupler, Phototriac Output, 400 V VDRM K3020PK302
Mfg:241 Pack:FUJI D/C:QFN Vendor:Other Category:Other
The K301 has one channel in a 4-pin mini-flat SMD package.The K302 has two channels in a 8-pin mini-flat SMD package.The K304 has four channels in a 16-pin mini-flat SMD package.K3012PG
Mfg:VISHAY Pack:05+ D/C:SOP-6 Vendor:Other Category:Other
Optocoupler, Phototriac Output, 250 V VDRM K3012PGK3012P
Mfg:VISHAY Pack:DIP-6P D/C:6+ Vendor:Other Category:Other
Optocoupler, Phototriac Output, 250 V VDRM K3012P