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Index K : K4N25G,K4N25,K4F160411D,
K4N25G
Vendor:Other Category:Other
These Photocouplers K4N25G cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.K4N25
Vendor:Other Category:Other
K4M64163PH-R(B)G/F
Vendor:Other Category:Other
The K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNGs high performance CMOS technology.Synchronous design allows precise cycle contr...K4M56323LE
Vendor:Other Category:Other
The K4M56323LE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...K4M563233D-M(E)E/N/I/P
Vendor:Other Category:Other
The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...K4M56163PE-R(B)G/F
Vendor:Other Category:Other
The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design make a device controlled...K4M51323LE-M(E)C/L/F
Vendor:Other Category:Other
The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...K4M513233E-M(E)C/L/F
Vendor:Other Category:Other
The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...K4M51163LE-Y(P)C/L/F
Vendor:Other Category:Other
The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...K4M511633E-Y(P)C/L/F
Vendor:Other Category:Other
The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...K4M511533E-Y(P)C/L/F
Vendor:Other Category:Other
The K4M511533E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...K4M28163PF-R(B)G/F
Vendor:Other Category:Other
The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...K4J55323QF-GC
Vendor:Other Category:Other
The 8Mx32 GDDR3 is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strob...K4J52324QC-B
Vendor:Other Category:Other
The K4J52324QC is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe...K4H561638H-UCCC
Vendor:Other Category:Other
The K4H561638H-UCCC is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchr...K4H561638H-UCA2
Vendor:Other Category:Other
The K4H561638H-UCA2 is designed as 256Mb H-die DDR SDRAM which would be 66 TSOP-II with Pb-free (RoHS compliant).The K4H561638H-UCA2 has many features. (1) Vdd : 2.5V ± 0.2V, Vddq : 2.5V ± 0.2V for DDR266, 333. (2) Vdd :...K4H561638F-UCCC
Vendor:Other Category:Other
The K4H561638F-UCCC is designed as 16M x 16 DDR SDRAM F-die (x16).The K4H561638F-UCCC has many features. (1) 200MHz Clock, 400Mbps data rate. (2) Vdd= +2.6V + 0.10V, Vddq= +2.6V + 0.10V. (3) Double-data-rate architecture...K4H561638F-UCC4
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
K4H561638F-LB3
Vendor:Other Category:Other
K4H561638F-LB0
Vendor:Other Category:Other
K4H561638F-LAA
Vendor:Other Category:Other
K4H561638F-LA2
Vendor:Other Category:Other
K4H561638F
Mfg:SAMSUNG D/C:05+ Vendor:Other Category:Other
The K4H560838F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous feat...K4H560838F-UCCC
Mfg:SAMSUNG Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
K4H560838F-UCC4
Mfg:SAMSUNG Pack:TSOP D/C:07+ Vendor:Other Category:Other
K4H560838F
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K4H560838F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous feat...K4H560838E-UCB0
Vendor:Other Category:Other
The K4H560838E-UCB0 is designed as DDR SDRAM 256Mb E-die (x8) which would be Pb-free.The K4H560838E-UCB0 has many features. (1) Double-data-rate architecture; two data transfers per clock cycle. (2) Bidirectional data st...K4H560838E-TC
Vendor:Other Category:Other
K4H560838E-LB3
Vendor:Other Category:Other
K4H560838E-LB0
Vendor:Other Category:Other
K4H560838E-LAA
Vendor:Other Category:Other
K4H560838E-LA2
Vendor:Other Category:Other
K4H560438H-UCB0
Vendor:Other Category:Other
The K4H560438H is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology.The K4H560438H-UCB0 belongs to K4H560438H seri...K4H560438E-ZC
Vendor:Other Category:Other
The K4H560438E / K4H560838E / is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,785,216 / 4x8,388,608 words by 4/ 8bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous f...K4H560438E-VC
Vendor:Other Category:Other
The K4H560438E / K4H560838E is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 words by 4/ 8/ bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous f...K4H560438E-UC
Vendor:Other Category:Other
K4H560438E-TC
Vendor:Other Category:Other
K4H560438E-NLB0
Vendor:Other Category:Other
K4H560438E-LB3
Vendor:Other Category:Other
K4H560438E-LB0
Vendor:Other Category:Other
K4H560438E-LAA
Vendor:Other Category:Other
K4H560438E-LA2
Vendor:Other Category:Other
K4H560438E-GCC4
Vendor:Other Category:Other
K4H560438D-NC
Vendor:Other Category:Other
K4H560438D
Mfg:12000 Pack:SAMSUNG Vendor:Other Category:Other
The K4H560438D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow...K4H56038D
Vendor:Other Category:Other
K4H511638D-UCCC
Vendor:Other Category:Other
The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 8,388,608 words by 16bits,fabricated with SAMSUNGs high performance CMOS technology.The K4H511638D-UCCC belongs to K4H511638D serie...K4H511638D-UC3
Vendor:Other Category:Other
The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 8,388,608 words by 16bits,fabricated with SAMSUNGs high performance CMOS technology.The K4H511638D-UC3 belongs to K4H511638D series...K4H510838B-NC_LA2
Vendor:Other Category:Other
The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 16,777,216 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow ex...K4H510838B-G(Z)C/LCC
Vendor:Other Category:Other
The K4H510438B / K4H510838B / K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance C...K4H510738E-TCLAA
Vendor:Other Category:Other
K4H510738E-TCLA2
Vendor:Other Category:Other
K4H510738E-TC
Vendor:Other Category:Other
K4H510738E-LB0
Vendor:Other Category:Other
K4H510638E-TC
Vendor:Other Category:Other
K4H510638E-LB0
Vendor:Other Category:Other
K4H510638E-LAA
Vendor:Other Category:Other
K4H510638E-LA2
Vendor:Other Category:Other
K4H510438C-UCA2
Vendor:Other Category:Other
The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 words by 4bits, fabricated with SAMSUNGs high performance CMOS technology.The K4H510438C-UCA2 belongs to K4H510438C serie...K4H510438B-G(Z)C/LCC
Vendor:Other Category:Other
The K4H510438B / K4H510838B / K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance C...K4H510438B-G(Z)C/LB3
Vendor:Other Category:Other
The K4H510438B / K4H510838B / K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance C...K4H510438B-G(Z)C/LB0
Vendor:Other Category:Other
The K4H510438B / K4H510838B / K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance C...K4H510438B-G(Z)C/LA2
Vendor:Other Category:Other
The K4H510438B / K4H510838B / K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance C...K4H280838F
Vendor:Other Category:Other
The K4H280438F / K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous feat...K4H280438F-UC
Vendor:Other Category:Other
K4H280438F-LB0
Vendor:Other Category:Other
K4H280438F-LA2
Vendor:Other Category:Other
K4H280438F-LA0
Vendor:Other Category:Other
K4H280438F
Vendor:Other Category:Other
The K4H280438F / K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous feat...K4H1G0738C-UCB0
Vendor:Other Category:Other
The K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 33,554,432 words by 8bits,fabricated with SAMSUNGs high performance CMOS technology.The K4H1G0738C-UCB0 belongs to K4H1G0738C seri...K4H1G0738C-UC/LB0
Vendor:Other Category:Other
The K4H1G0638C / K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864 / 4x 33,554,432 / 4x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technolog...K4H1G0738C-UC/LA2
Vendor:Other Category:Other
The K4H1G0638C / K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864 / 4x 33,554,432 / 4x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technolog...K4H1G0638C-UC/LB0
Vendor:Other Category:Other
The K4H1G0638C / K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864 / 4x 33,554,432 / 4x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technolog...K4H1G0638C-UC/LA2
Vendor:Other Category:Other
The K4H1G0638C / K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864 / 4x 33,554,432 / 4x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technolog...K4H1G0438M-TC/LB3
Vendor:Other Category:Other
The K4H1G0438M / K4H1G0838M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864/ 4x 33,554,432 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous f...K4H1G0438M-TC/LA2
Vendor:Other Category:Other
The K4H1G0438M / K4H1G0838M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 67,108,864/ 4x 33,554,432 words by 4/ 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous f...K4H1G0438M-LA2
Vendor:Other Category:Other
K4G323222A
Mfg:SAMSUNG Pack:QFP D/C:02+ Vendor:Other Category:Other
The K4G323222A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle c...K4F661612C
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs K4F661612C. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or...K4F661612B
Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs K4F661612B. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or...K4F660812D
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs K4F660812D. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or ...K4F660412D
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs K4F660412D. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or...K4F641612C
Mfg:SAMSUNG Pack:FAST Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs K4F641612C. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or...K4F641612B
Mfg:SAMSUNG Pack:FAST Vendor:Other Category:Other
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs K4F641612B. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or...K4F640812D
Vendor:Other Category:Other
This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs K4F640812D. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or ...K4F640412D
Vendor:Other Category:Other
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs K4F640412D. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or...K4F171612D
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs K4F171612D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Re...K4F171611D
Vendor:Other Category:Other
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Re...K4F170812D
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs K4F170812D . Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Re...K4F170811D
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs K4F170811D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F170412D
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170412D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F170412C
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170412C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F170411D
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170411D . Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Re...K4F170411C
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170411C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F160812D-BC60
Vendor:Other Category:Other
The K4F160812D-BC60 is one member of the K4F160812D series.This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply...K4F160812D
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs K4F160812D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F160811D
Vendor:Other Category:Other
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs K4F160811D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F160412D
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160412D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F160412C
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160412C. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...K4F160411D
Vendor:Other Category:Other
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F160411D. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref...