Polyfet RF Devices [polyfet]

Polyfet has a proud history of providing excellence in service, delivering quality products on time and full technical support to assist customer engineers in selecting and designing our transistors into their amplifiers. Polyfet has been shipping in volume High Power RF Mosfet Transistors employing both State of the Art LDMOS (Lateral) and VDMOS (Vertical) silicon gate technologies since 1988. Polyfet is located about an hour's drive North West of Los Angeles, California.

Polyfet’s products have long life time cycles of over fifteen years making them suitable for Military applications. Polyfet manufactures products in a World Class Wafer Facility. Advanced techniques of dry etching and mask steppers are used to improve uniformity of the transistor from production batch to production batch. Sub-micron process technology is used to achieve high performance. The transistors are manufactured by ion implant diffusion techniques. Polyfet RF Devices manufactures High Power Mosfet RF Transistors. The technology base is Silicon Gate Vertical and Lateral DMOSFETs. Polyfet specializes in MOS devices and have been in production since 1985. Polyfet’s products are well established in the industry and Polyfet has a long history supporting both military and commercial applications.

Polyfet continues to make product improvements in both her Vdmos and Ldmos lines. The higher input impedance of the Vdmos makes input matching simpler, especially for broadband frequencies. The lower gain of the Vdmos facilitates simpler stabilizing circuitry at lower frequencies. The low parasitic capacitances of the Ldmos make it suitable for high frequency operations at high efficiencies.