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Index H : HY51VS65163HG,HY51VS18163HGL,HY 25-P ,
HY51VS65163HG
Vendor:Other Category:Other
This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced ci...HY51VS18163HGL
Vendor:Other Category:Other
The HY51VS18163HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technol...HY51VS18163HG
Vendor:Other Category:Other
The HY51VS18163HG is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technolo...HY51V65163HGL
Vendor:Other Category:Other
This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced ci...HY51V65163HG
Vendor:Other Category:Other
This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced ci...HY51V18163HGL
Vendor:Other Category:Other
The HY51V18163HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technolo...HY51V18163HG
Vendor:Other Category:Other
The HY51V18163HG is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technolog...HY51V17403HGL
Vendor:Other Category:Other
The HY51V17403HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technolog...HY51V17403HG
Vendor:Other Category:Other
The HY51V17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process techno...HY51C4256
Vendor:Other Category:Other
The HY51C4256 is a high speed,low power 2262,144 x 4 CMOS dynamic random access memory. Fabricated with HYUNDAI CMOS technology,HY51C4256 offers a fast page mode for high data bandwidth, fast usable speed, CMOS standby c...HY5118164B
Vendor:Other Category:Other
The HY5118164B has the following features including Extended data out operation;Read-modify-write Capability;TTL compatible inputs and outputs;/CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability;JEDEC standar...HY5117404B
Mfg:HY D/C:09+ Vendor:Other Category:Other
This family is a 16M bit dynamic RAM HY5117404B organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The ...HY5116404B
Vendor:Other Category:Other
This family is a 16M bit dynamic RAM HY5116404B organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The ...HY510N
Mfg:HY D/C:DIP-8 Vendor:Other Category:Other
The HY510N provides protection circuits, power good output (PGO), fault protection latch (FPL_N),and a protection detector function (PDON_N) control. It can minimize external components of switching power supply systems ...HY50-P/SP21
Vendor:Other Category:Other
The HY50-P/SP21 is designed as one kind of current transducer device that has some points of features:(1)Hall effect measuring principle; (2)Galvanic isolation between primary and secondary circuit; (3)Isolation voltage ...HY-5
Vendor:Other Category:Other
PerkinElmer thyratrons HY-5 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typical...HY39S256
Vendor:Other Category:Other
The HY39S256 are four bank Synchronous DRAMs organized as 4 banks x 16 MBit x4, 4 banks x 8 MBit x8 and 4 banks x 4 Mbit x16 respectively. These synchronous devices achieve high speed data ransfer rates for CAS latencie...HY39S128800FL
Vendor:Other Category:Other
The HY39S128800FL are four bank Synchronous DRAM's organized as 32 MBit x4, 16 MBit x8 and 8 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip a...HY39S128160FL
Vendor:Other Category:Other
The HY39S128160FL are four bank Synchronous DRAM's organized as 32 MBit x4, 16 MBit x8 and 8 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip a...HY330
Vendor:Other Category:Other
This HY330 revolutionary package design allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions.This package LEDs HY33...HY-3202
Vendor:Other Category:Other
PerkinElmer thyratrons HY-3202 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typi...HY-32
Vendor:Other Category:Other
PerkinElmer thyratrons HY-32 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typica...HY310
Vendor:Other Category:Other
This HY310 revolutionary package design allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions.This package LEDs HY31...HY-3025
Vendor:Other Category:Other
PerkinElmer thyratrons HY-3025 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typi...HY-3005
Vendor:Other Category:Other
PerkinElmer thyratrons HY-3005 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typi...HY-3003
Vendor:Other Category:Other
PerkinElmer thyratrons HY-3003 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typi...HY-3002
Vendor:Other Category:Other
PerkinElmer thyratrons are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typically us...HY29LV800
Vendor:Other Category:Other
The HY29LV800 is an 8 Mbit, 3 volt-only, CMOS Flash memory organized as 1,048,576 (1M) bytes or 524,288 (512K) words that is available in 44pin PSOP, 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears o...HY29LV320
Vendor:Other Category:Other
The HY29LV320 is a 32 Mbit, 3 volt-only CMOS Flash memory organized as 2,097,152 (2M) words.The device is available in 48-pin TSOP and 63-ball FBGA packages. Word-wide data (x16) ap-pears on DQ[15:0]. The HY29LV320 can...HY29F800A
Vendor:Other Category:Other
The HY29F800A is an 8 Megabit, 5 volt only CMOS Flash memory organized as 1,048,576 (1M) bytes or 524,288 (512K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages.The HY29F800A can be...HY29F800
Vendor:Other Category:Other
The HY29F800 is an 8 Megabit, 5 volt only CMOS Flash memory organized as 1,048,576 (1M) bytes or 524,288 (512K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages.The HY29F800 can be p...HY29F400A
Vendor:Other Category:Other
The HY29F400A is a 4 Megabit, 5 volt only CMOS Flash memory organized as 524,288 (512K) bytes or 262,144 (256K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages.The HY29F400A can be ...HY29F080
Vendor:Other Category:Other
The HY29F080 is an 8 Megabit, 5 volt-only CMOS Flash memory organized as 1,048,576 (1M) bytes of eight-bits each. The device is offered in industry- standard 44-pin PSOP and 40-pin TSOP packages. The HY29F080 can be prog...HY29F040A
Vendor:Other Category:Other
The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS Flash memory device organized as a 512K bytes of 8 bits each. The device is offered in standard 32-pin PDIP, 32-pin PLCC and 32-pin TSOP packages.It is designed to be prog...HY29F002T
Vendor:Other Category:Other
The HY29F002T is an 2 Megabit, 5 volt-only CMOS Flash memory organized as 262,144 (256K) bytes. The device is offered in industrystandard 32-pin TSOP and PLCC packages.The HY29F002T can be programmed and erased in-system...HY29DS323
Vendor:Other Category:Other
The HY29DS322/HY29DS323 (HY29DS32x) is a 32 Mbit, 2.0 volt-only CMOS Flash memory organized as 4,194,304 (4M) bytes or 2,097,152 (2M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-wide dat...HY29DS322
Vendor:Other Category:Other
The HY29DS322/HY29DS323 (HY29DS32x) is a 32 Mbit, 2.0 volt-only CMOS Flash memory organized as 4,194,304 (4M) bytes or 2,097,152 (2M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-wide dat...HY29DS162
Vendor:Other Category:Other
The HY29DS162/HY29DS163 (HY29DS16x) is a 16 Mbit, 1.8 volt-only CMOS Flash memory organized s 2,097,152 (2M) bytes or 1,048,576 (1M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-...HY29DL162
Vendor:Other Category:Other
The HY29DL162/HY29DL163 (HY29DL16x) is a 16 Mbit, 3 volt-only CMOS Flash memory organi zed as 2,097,152 (2M) bytes or 1,048,576 (1M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-wide data...HY27UT08G2A-TPCB
Vendor:Other Category:Other
The HY27UT08G2A-TPCB is largely the same as the HY27UF081G2M series in many characters. The HY27UF081G2M is a kind of 128 M x 8 bits high density NAND flash memory. It is offered in 1.8 V VCC power supply and in 3.3 V VC...HY27US16561M
Vendor:Other Category:Other
The HYNIX HY27US16561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wo...HY27US16121M
Vendor:Other Category:Other
The HYNIX HY27US16121M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY27US08561M-TPCB
Vendor:Other Category:Other
The HY27US08561M-TPCB belongs to the HY27US08561M series. It is a kind of 32 M x 8 bit high density NAND flash memory. It is offered in 3.3 V VCC power supply and in 1.8 V VCC power supply. It is available in the 48TSOP1...HY27US08561M
Mfg:HYNIX Pack:TSOP Vendor:Other Category:Other
The HY27US08561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (2...HY27US08281A-TPCB
Vendor:Other Category:Other
The HY27US08281A-TPCB belongs to the HY27US08281A series. It is a kind of 16 M x 8 bit high density NAND flash memory. It is offered in 3.3 V VCC power supply and in 1.8 V VCC power supply and it provides the most cost-e...HY27US08121M
Mfg:HYNIX Pack:TSOP Vendor:Other Category:Other
The HYNIX HY27US08121M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY27US(16)281A
Vendor:Other Category:Other
The HYNIX HY27US(16)281A series is a 16Mx8bit with spare 4G bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27US(16)281A's NAND cell provides the most cost-effective solution f...HY27US(08)281A
Vendor:Other Category:Other
The HYNIX HY27US(08)281A series is a 16Mx8bit with spare 4G bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27US(08)281A's NAND cell provides the most cost-effective solution f...HY27UH088GDM
Vendor:Other Category:Other
The HYNIX HY27UH088GDM series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UH088GDM's NAND cell provides the most cost-effective solution for the solid state mass storage...HY27UH088G2M
Mfg:HYNIX Pack:SLC D/C:07+ Vendor:Other Category:Other
The HYNIX HY27UH088G2M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UH088G2M's NAND cell provides the most cost-effective solution for the solid state mass storage...HY27UG164GDM
Vendor:Other Category:Other
The HYNIX HY27UG164GDM series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UG164GDM's NAND cell provides the most cost-effective solution for the solid state mass stora...HY27UG162G2M
Vendor:Other Category:Other
The HYNIX HY27UG162G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27UG162G2M's NAND cell provides the most cost-effective solution fo...HY27UG16
Vendor:Other Category:Other
The HYNIX HY27UG16 series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UG16's NAND cell provides the most cost-effective solution for the solid state mass storage marke...HY27UG084G2M
Mfg:HY D/C:06+ Vendor:Other Category:Other
The HYNIX HY27UG084G2M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UG084G2M's NAND cell provides the most cost-effective solution for the solid state mass stora...HY27UG082G2M
Mfg:HY Pack:TSOP48 Vendor:Other Category:Other
The HYNIX HY27UG082G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27UG082G2M's NAND cell provides the most cost-effective solution fo...HY27UG08
Vendor:Other Category:Other
The HYNIX HY27UG08 series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UG08's NAND cell provides the most cost-effective solution for the solid state mass storage marke...HY27UF162G2M
Vendor:Other Category:Other
The HYNIX HY27UF162G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UF162G2M's NAND cell provides the most cost-effective solution for the solid state mass storag...HY27UF161G2M
Vendor:Other Category:Other
The HYNIX HY27UF161G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27UF161G2M's NAND cell provides the most cost-effective solution fo...HY27UF084G2M
Mfg:HYNIX Pack:TSOP D/C:2006+ Vendor:Other Category:Other
The HYNIX HY27UF084G2M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UF084G2M's NAND cell provides the most cost-effective solution for the solid state mass stora...HY27UF082G2M
Mfg:HY D/C:05+ Vendor:Other Category:Other
The HYNIX HY27UF082G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.HY27UF082G2M's NAND cell provides the most cost-effective solution for the solid state mass storag...HY27UF081G2M
Mfg:HYNIX Pack:TSOP Vendor:Other Category:Other
The HYNIX HY27UF081G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27UF081G2M's NAND cell provides the most cost-effective solution fo...HY27UF
Vendor:Other Category:Other
The HYNIX HY27UF series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid stat...HY27UA161G1M
Vendor:Other Category:Other
The HYNIX HY27UA161G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY27UA081G1M
Mfg:HYNIX Pack:SLC D/C:07+ Vendor:Other Category:Other
The HYNIX HY27UA081G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY27SS16561M
Vendor:Other Category:Other
The HYNIX HY27SS16561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wo...HY27SS16121M
Vendor:Other Category:Other
The HYNIX HY27SS16121M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY27SS08561M
Vendor:Other Category:Other
The HYNIX HY27SS08561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wo...HY27SS08121M
Vendor:Other Category:Other
The HYNIX HY27SS08121M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY27SG162G2M
Vendor:Other Category:Other
The HYNIX HY27SG162G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27SG162G2M's NAND cell provides the most cost-effective solution fo...HY27SG082G2M
Vendor:Other Category:Other
The HYNIX HY27SG082G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27SG082G2M's NAND cell provides the most cost-effective solution fo...HY27SF161G2M
Vendor:Other Category:Other
The HYNIX HY27SF161G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27SF161G2M's NAND cell provides the most cost-effective solution fo...HY27SF081G2M
Vendor:Other Category:Other
The HYNIX HY27SF081G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.HY27SF081G2M's NAND cell provides the most cost-effective solution fo...HY27SA161G1M
Vendor:Other Category:Other
The HYNIX HY27SA161G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY27SA081G1M
Vendor:Other Category:Other
The HYNIX HY27SA081G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Wor...HY25-P
Mfg:LEM Pack:module D/C:N/A Vendor:Other Category:Other
HY23V16202
Vendor:Other Category:Other
The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit (byte mode) oras 1,048,576 x 16 bit(word mode) followed by BHE mode select.Thelowpowerfeature allows the batteryoperation. ...HY22-73LF
Vendor:Other Category:Other
The HY22-73 is a 50 Ω, 90-degree hybrid tuned for the 2.12.3 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/ amplitude balance. It is available in the S...HY22-73
Mfg:SKYWORKSSOLUTIONS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HY22-73 is a 50 , 90 degree hybrid tuned for the 2.12.3 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOT-6 lea...HY2262
Mfg:HY Pack:SOP D/C:07+ Vendor:Other Category:Other
HY20-P
Vendor:Other Category:Other
The HY20-P is designed as one kind of current transducer device that has some points of features:(1)Hall effect measuring principle; (2)Galvanic isolation between primary and secondary circuit; (3)Isolation voltage 2500 ...HY2004
Vendor:Other Category:Other
The ILP HY2004 Power Amplifier is a fully encapsulated high quality power amplifier with Integral heatsink.By selecting the appropiate mains transformer and programming link the amplifier can be used with 4 or 8 loads wi...HY2002
Vendor:Other Category:Other
The ILP HY2002 Power Amplifier is a fully encapsulated high quality power amplifier with Integral heatsink. By selecting the appropiate mains transformer and the programming link on the PCB the amplifier can be used with...HY-2
Vendor:Other Category:Other
PerkinElmer thyratrons HY-2 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typical...HY-1A
Vendor:Other Category:Other
PerkinElmer thyratrons HY-1A are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typica...HY19-12LF
Vendor:Other Category:Other
The HY19-12LF is a 90-degree hybrid tuned for the 1.851.99 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 sur...HY19-12
Mfg:SKYWORKS Pack:SOP-8P D/C:2005 Vendor:Other Category:Other
The HY19-12 is a 90 degree hybrid tuned for the 1.851.99 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 leade...HY17-12LF
Vendor:Other Category:Other
The HY17-12LF is a 90-degree hybrid tuned for the 1.711.88 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 sur...HY17-12
Mfg:ALPHA Pack:SMD-8 Vendor:Other Category:Other
The HY17-12 is a 90 degree hybrid tuned for the 1.711.88 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 leade...HY15-P
Vendor:Other Category:Other
HY12-P
Mfg:LEM Pack:module D/C:N/A Vendor:Other Category:Other
HY-1102
Vendor:Other Category:Other
PerkinElmer thyratrons HY-1102 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typi...HY-11
Vendor:Other Category:Other
PerkinElmer thyratrons HY-11 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typica...HY10-P
Mfg:CE Pack:RELAY D/C:N/A Vendor:Other Category:Other
HY-10
Vendor:Other Category:Other
PerkinElmer thyratrons HY-10 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typica...HY 7-P/SP1
Vendor:Other Category:Other
HY 5-P
Vendor:Other Category:Other
HY 50-P/SP1
Vendor:Other Category:Other
HY 50-P
Vendor:Other Category:Other
HY 25-P/SP1
Vendor:Other Category:Other
HY 25-P
Vendor:Other Category:Other