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Index H : HYB 314100BJ-50,HYB 3118165BSJ,HY5PS121621F,
HYB 314100BJ-50
Vendor:Other Category:Other
The HYB 314100BJ-50 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins...HYB 3118165BSJ
Vendor:Other Category:Other
HYB 3118160BSJ-60
Vendor:Other Category:Other
HYB 3118160BSJ-50
Vendor:Other Category:Other
HYB 3117405BJ/BT-60
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 3117405BJ/BT-60 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon g...HYB 3117405BJ/BT-50
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 3117405BJ/BT-50 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon g...HYB 3116405BJ/BT(L)-60
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 3116405BJ/BT(L)-60 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silico...HYB 3116405BJ/BT(L)-50
Vendor:Other Category:Other
<FONT face=Verdana>The HYB 3116405BJ/BT(L)-50 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silico...HY92-12LF
Vendor:Other Category:Other
The HY92-12LF is a 90-degree hybrid tuned for the 0.880.96 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 sur...HY92-12
Mfg:ALPHA Vendor:Other Category:Other
The HY92-12 is a 90 degree hybrid tuned for the 0.880.96 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 leade...HY86-12LF
Vendor:Other Category:Other
90 Degree Hybrid The HY86-12LF is a 90 degree hybrid tuned for the 0.820.90 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available...HY86-12
Mfg:ALPHA Pack:SMD-8 Vendor:Other Category:Other
The HY86-12 is a 90 degree hybrid tuned for the 0.820.90 GHz band. The monolithic circuitry is 100% passive and offers low loss, high isolation and exceptional phase/amplitude balance. It is available in the SOIC-8 leade...HY7-P
Vendor:Other Category:Other
HY-7110
Vendor:Other Category:Other
The HY-7110 is a miniature proportionally controlled heater whose temperature can be programmed with a single external resistor. This device is ideally suited for regulating the temperature of sensitive electronic compon...HY64UD16322M
Vendor:Other Category:Other
The HY64UD16322M is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The operates in the extended ...HY64UD16322A
Vendor:Other Category:Other
The HY64UD16322A is a 32Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 2,097,152 words by 16bits. The operates in the extended ...HY64UD16162M
Vendor:Other Category:Other
The HY64UD16162M is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended ...HY64UD16162B
Vendor:Other Category:Other
The HY64UD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended ...HY64SD16162B
Vendor:Other Category:Other
The HY64SD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended ...HY64LD16162M
Vendor:Other Category:Other
The HY64LD16162M is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The operates in the extended ...HY6410
Vendor:Other Category:Other
The HY6410 Laser Diode Driver is a high speed, high current solid-state hybrid laser diode driver. It incorporates a patented technique of "backmatching" which allows remote drive of the laser diode through a 50 coaxial ...HY63V8400
Vendor:Other Category:Other
The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than...HY6340
Vendor:Other Category:Other
The HY6340 Laser Diode Driver is designed for applications requiring high constant current drive for the operation of laser diodes such as pump sources for EDFA's and diode pumped semiconductors. It provides selectable d...HY6330
Vendor:Other Category:Other
The HY6330 Laser Diode Driver is a programmable voltage controlled constant current transconductance amplifier with optical feedback.The HY6330 is used in applications that require a stable, selectable current source to ...HY62WT08081E
Mfg:HYUNDAI Pack:SMD D/C:N/A Vendor:Other Category:Other
The HY62WT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and batt...HY62V8200B
Vendor:Other Category:Other
The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. It uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particul...HY62UF16804B
Vendor:Other Category:Other
The HY62UF16804B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62UF16201A
Vendor:Other Category:Other
The HY62UF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit ...HY62UF16101C
Vendor:Other Category:Other
The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. It uses high performance full CMOS process technology and designed for high speed low power circuit technolo...HY62UF08401C
Vendor:Other Category:Other
The HY62UF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tech...HY62U8400A
Vendor:Other Category:Other
The HY62U8400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. It uses Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit t...HY62U8200B
Vendor:Other Category:Other
The HY62U8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. It uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particul...HY62U8100B
Mfg:HY Pack:TSSOP D/C:04+ Vendor:Other Category:Other
The HY62U8100B is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. It uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particul...HY62SF16806B
Vendor:Other Category:Other
The HY62SF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 6bits. The HY62SF16806B uses high performance full CMOS process technology and is designed for high speed and low ...HY62SF16806A
Vendor:Other Category:Other
The HY62SF16806A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit ...HY62SF16804B
Vendor:Other Category:Other
The HY62SF16804B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits. The HY62SF16804B uses high performance full CMOS process technology and is designed for high speed and low pow...HY62SF16804A
Vendor:Other Category:Other
The HY62SF16804A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. It uses high performance full CMOS processtechnology and is designed for high speed and low power circuit t...HY62SF16406E
Vendor:Other Category:Other
The HY62SF16406E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62SF16406D
Vendor:Other Category:Other
The HY62SF16406D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62SF16406C
Vendor:Other Category:Other
The HY62SF16406C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62SF16404E
Vendor:Other Category:Other
The HY62SF16404E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62SF16404D
Vendor:Other Category:Other
The HY62SF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62SF16404C
Vendor:Other Category:Other
The HY62SF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16404C uses high performance full CMOS process technology and is designed for high speed and low pow...HY62SF16403A
Vendor:Other Category:Other
The HY62SF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16403A uses high performance full CMOS process technology and is designed for high speed and low pow...HY62SF16201A
Vendor:Other Category:Other
The HY62SF16201A is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62SF16201A uses high performance full CMOS process technology and designed for high speed low power circuit...HY62SF16101C
Vendor:Other Category:Other
The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16101C uses high performance full CMOS process technology and designed for high speed low power ci...HY62LF16806A
Vendor:Other Category:Other
The HY62LF16806A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62LF16806A uses high performance full CMOS process technology and is designed for high speed and low ...HY62LF16804B
Vendor:Other Category:Other
The HY62LF16804B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits. The HY62LF16804B uses high performance full CMOS process technology and is designed for high speed and low pow...HY62LF16804A
Vendor:Other Category:Other
The HY62LF16804A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62LF16804A uses high performance full CMOS process technology and is designed for high speed and low ...HY62LF16406D
Vendor:Other Category:Other
The HY62LF16406D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62LF16406D uses high performance full CMOS process technology and is designed for high speed and low pow...HY62LF16406C
Vendor:Other Category:Other
The HY62LF16406C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62LF16404D
Vendor:Other Category:Other
The HY62LF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62LF16404C
Vendor:Other Category:Other
The HY62LF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit tec...HY62LF16206B-DT12C
Vendor:Other Category:Other
The HY62LF16206B-DT12C is a high speed, super low power and 2Mbit full CMOS SRAM organized as 128K words by 16bits. The HY62LF16206B uses high performance full CMOS process technology and is designed for high speed and l...HY62LF16206A-LT12C
Vendor:Other Category:Other
The HY62LF16206A-LT12C is a high speed, super low power and 2Mbit full CMOS SRAM organized as 128K words by 16bits. The HY62LF16206A uses high performance full CMOS process technology and is designed for high speed and l...HY62KVT08081E
Vendor:Other Category:Other
The HY62KVT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and bat...HY62KUT08081E
Vendor:Other Category:Other
The HY62KUT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and bat...HY62KF16403E
Vendor:Other Category:Other
The HY62KF16403E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62KF16403E uses high performance full CMOS process technology and is designed for high speed and low pow...HY62KF08802B
Vendor:Other Category:Other
The HY62KF08802B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 1M words by 8bits. The HY62KF08802B uses high performance full CMOS process technology and is designed for high speed and low power ...HY62KF08401C
Vendor:Other Category:Other
The HY62KF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62KF08401C uses high performance full CMOS process technology and is designed for high speed and low powe...HY62CT08081E
Mfg:HY Vendor:Other Category:Other
The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and batt...HY628400A
Mfg:HYUNDAI Pack:TSOP Vendor:Other Category:Other
The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power...HY628400
Vendor:Other Category:Other
The HY628400 has the following features including High speed-55R01851100ns (max.);Fully static operation;No clock or refresh required;TTL compatible inputs and outputs;Tri-state output. The HY628400 is a high-speed, low...HY628100BLLT1-70
Vendor:Other Category:Other
The HY628100BLLT1-70 is one member of the HY628100B family which designed as the high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8 bit. With the help of high performance CM...HY628100BLLG-55
Vendor:Other Category:Other
The HY628100BLLG-55 is one member of the HY628100B family which designed as one kind of high speed, low power and 1M bit CMOS Static Random Access Memory that organized as 131,072 words by 8bit.It uses high performance C...HY628100B
Mfg:HY Pack:SOP Vendor:Other Category:Other
The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power c...HY628100A
Mfg:HY Pack:SMD D/C:130 Vendor:Other Category:Other
The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power c...HY62256A-I
Vendor:Other Category:Other
The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. It has a data retention mode that guarantees da...HY62256A
Mfg:HY Pack:96 D/C:DIP-28 Vendor:Other Category:Other
The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. It has a data retention mode that guarantees da...HY-61
Vendor:Other Category:Other
PerkinElmer thyratrons HY-61 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typica...HY-60
Vendor:Other Category:Other
PerkinElmer thyratrons are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typically us...HY-6
Vendor:Other Category:Other
PerkinElmer thyratrons HY-6 are high energy switches capable of operation up to 20 kA and 75 kV. A wide range of standard thyratrons are offered, all constructed of rugged ceramic and metal parts. These tubes are typical...HY5W6B6DLF(P)-xE
Vendor:Other Category:Other
The Hynix Low Power SDRAM HY5W6B6DLF(P)-xE is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs....HY5V66LF6P
Vendor:Other Category:Other
The HY5V66LF6P series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V66E(L)F6(P) is organized as 4banks of 1,048,576 x 16.HY5V66LF...HY5V66EF6
Vendor:Other Category:Other
The Hynix HY5V66EF6 series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V66E(L)F6(P) is organized as 4banks of 1,048,576 x 16.HY5...HY5V62CF
Vendor:Other Category:Other
The Hynix HY5V62CF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V62C is organized as 4banks of 524,288x32.HY5V62CF is offering f...HY5V52LF
Vendor:Other Category:Other
The Hynix HY5V52LF series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52(L)F(P) is organized as 4banks of 2,097,152x32.HY5V52L...HY5V26CF
Vendor:Other Category:Other
The Hynix HY5V26CF is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5V26C(L/S)F is organized as 4banks of 2,097,152x16 HY...HY5V22LFP
Vendor:Other Category:Other
The Hynix HY57V283220(L)T(P) / HY5V22LFP is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220(L)T(P) / HY5V22(L)F(P) is organ...HY5V22GF
Mfg:HYNIX Pack:2001 D/C:BGA Vendor:Other Category:Other
The Hynix HY5V22GF is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32.HY5V22GF is offerin...HY5V22(L)F(P)
Vendor:Other Category:Other
The Hynix HY57V283220(L)T(P) / HY5V22(L)F(P) is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. It is organized as 4banks of 1,048,576x3...HY5S6B6S
Vendor:Other Category:Other
The Hynix Low Power SDRAM HY5S6B6S is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.The Hyni...HY5S6B6L
Vendor:Other Category:Other
The Hynix Low Power SDRAM HY5S6B6L is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.The Hyni...HY5S6B6D
Vendor:Other Category:Other
The Hynix Low Power SDRAM HY5S6B6D is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.The Hyni...HY5PS1G431CFP
Vendor:Other Category:Other
HY5PS1G431(L)F
Vendor:Other Category:Other
HY5PS1G421M
Vendor:Other Category:Other
HY5PS12821L
Vendor:Other Category:Other
HY5PS12821FP
Vendor:Other Category:Other
The features of HY5PS12821FP: 1.1 Device Features and Ordering Information1.1.1 Key Feaures1.1.2 Ordering Information1.1.3 Ordering Frequency1.2 Pin configuration1.3 Pin DescriptionHY5PS12821F
Vendor:Other Category:Other
HY5PS12421L
Vendor:Other Category:Other
HY5PS12421FP
Vendor:Other Category:Other
The features of HY5PS12421FP: 1.1 Device Features and Ordering Information1.1.1 Key Feaures1.1.2 Ordering Information1.1.3 Ordering Frequency1.2 Pin configuration1.3 Pin DescriptionHY5PS12421F
Vendor:Other Category:Other
HY5PS12421(L)F
Vendor:Other Category:Other
HY5PS121621LFP-C4
Vendor:Other Category:Other
The HY5PS121621LFP-C4 is a kind of 512Mb DDR2 SDRAM. It is organized as a 32Mbit*16 device. It is available in 84ball FBGAs(*16) package. Then is some information about the operating frequency: tCK=3.75 ns; CL=4 Clk; tRC...HY5PS121621L
Vendor:Other Category:Other
HY5PS121621FP-Y5
Vendor:Other Category:Other
The HY5PS121621FP-Y5 is a kind of 512Mb DDR2 SDRAM. It is organized as a 32Mbit*16 device. It is available in 84ball FBGAs(*16) package. Then is some information about the operating frequency: tCK=3 ns; CL=5 Clk; tRCD=4 ...HY5PS121621FP-E3
Vendor:Other Category:Other
The HY5PS121621FP-E3 is a kind of 512Mb DDR2 SDRAM. It is organized as a 32Mbit*16 device. It is available in 84ball FBGAs(*16) package. Then is some information about the operating frequency: tCK=5 ns; CL=3 Clk; tRCD=3 ...HY5PS121621FP-C4
Vendor:Other Category:Other
The HY5PS121621FP-C4 has many unique features: (1) VDD is 1.8V; (2) VDDQ is 1.8V +/- 0.1V; (3) all inputs and outputs are compatible with SSTL_18 interface; (4) fully differential clock inputs (CK, /CK) operation; (5) so...HY5PS121621F
Vendor:Other Category:Other