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Index I : IRF644NPbF,IRF644NL,IRF5NJ9540,
IRF644NPbF
Mfg:IR Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF644NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF644NL
Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF644NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switc...IRF644N
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF644N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switch...IRF644B
Mfg:IR Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRF644B has been especially tailored to minimize on-stat...IRF644, SiHF644
Vendor:Other Category:Other
Power MOSFET IRF644, SiHF644IRF640T
Vendor:Other Category:Other
This Power MOSFET of the IRF640T is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sou...IRF640S
Mfg:IR Vendor:Other Category:Other
This power MOSFET of the IRF640S is designed using he company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sour...IRF640PBF
Vendor:Other Category:Other
The IRF640PBF is designed as one kind of HEXFET power MOSFET device that has some points of features such as (1)dynamic dv/dt rating;(2)repetitive avalanche rated;(3)fast switching;(4)ease of paralleling;(5)simple drive ...IRF640NSPbF
Mfg:INTERNATIONAL RECTIFIER CORP. Pack:SMD D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 18A D2PAKFifth Generation HEXFET® Power MOSFETs IRF640NSPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swi...IRF640NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 18A D2PAKFifth Generation HEXFET® Power MOSFETs IRF640NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF640NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 18A TO-220ABThe IRF640NPbF is one of the IRF640N series.Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben...IRF640NLPbF
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 18A TO-262Fifth Generation HEXFET® Power MOSFETs IRF640NLPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swi...IRF640NL
Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF640NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...IRF640N
Mfg:IR Pack:TO-220 D/C:2005 Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF640N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switc...IRF640L
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Third Generation HEXFETs IRF640L from International Rectifier provide the designer with the best combinations of fast switching ,ruggedized device design, low on-resistance and cost-effectiveness.The D2Pak IRF640L is...IRF640FP
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 200V 18A TO-220FPThis power MOSFET of the IRF640FP is designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from variou...IRF640B
Mfg:IR Pack:TO-220 D/C:538 Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRF640B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRF640B has been especially tailored to minimize on-sta...IRF640A
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
IRF640, SiHF640
Vendor:Other Category:Other
Power MOSFET IRF640, SiHF640IRF640
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 200V 18A TO-220These are N-Channel enhancement mode silicon gate power field effect transistors IRF640. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch...IRF634S, SiHF634S
Vendor:Other Category:Other
Power MOSFET IRF634S, SiHF634SIRF634NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRF634NPbF
Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF634NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF634NL
Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF634NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...IRF634N
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF634N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...IRF634FP
Mfg:ST Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY™ process IRF634FP, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company...IRF634B
Mfg:F Pack:TO-220 D/C:09+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRF634B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRF634B has been especially tailored to minimize on-sta...IRF634A
Pack:3 D/C:220 Vendor:Other Category:Other
IRF634, SiHF634
Vendor:Other Category:Other
Power MOSFET IRF634, SiHF634IRF634
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 250V 8A TO-220Using the latest high voltage MESH OVERLAY™ process IRF634, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's...IRF630SPbF
Vendor:Other Category:Other
The IRF630SPbF is designed as third generation HEXFET fro international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes...IRF630S, SiHF630S
Vendor:Other Category:Other
Power MOSFET IRF630S, SiHF630SIRF630S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
This power MOSFET of the IRF630S is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from variou...IRF630NSPbF
Mfg:IR Pack:TO-263 D/C:0636+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 9.3A D2PAKFifth Generation HEXFET® Power MOSFETs IRF630NSPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swi...IRF630NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 9.3A D2PAKFifth Generation HEXFET® Power MOSFETs IRF630NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...IRF630NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 9.3A TO-220ABFifth Generation HEXFET® Power MOSFETs IRF630NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF630NLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 9.3A TO-262Fifth Generation HEXFET® Power MOSFETs IRF630NLPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swi...IRF630NL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Fifth Generation HEXFET® Power MOSFETs IRF630NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...IRF630N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 9.3A TO-220ABFifth Generation HEXFET® Power MOSFETs IRF630N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...IRF630MFP
Mfg:ST Pack:03+ D/C:TO-220F Vendor:Other Category:Other
This power MOSFET IRF630MFP is designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various so...IRF630M
Mfg:ST Pack:TO220/3 Vendor:Other Category:Other
This power MOSFET IRF630M is designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sour...IRF630FP
Mfg:ST Pack:TO-220F D/C:09+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 200V 9A TO-220FPThis power MOSFET IRF630FP is designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sourc...IRF630F
Vendor:Other Category:Other
`With TO-220F package IRF630F`Low on-stateand thermal resistance`Fast switching`VDSS=200V; RDS(ON)0.4;ID=9A`1.gate 2.drain 3.sourceIRF630B
Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRF630B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRF630B has been especially tailored to minimize on-sta...IRF630A
Mfg:FSC Pack:TO220AB D/C:08+ Vendor:Other Category:Other
IRF630, SiHF630
Vendor:Other Category:Other
Power MOSFET IRF630, SiHF630IRF630
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 200V 9A TO-220These are N-Channel enhancement mode silicon gate power field effect transistors IRF630. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch...IRF624S, SiHF624S
Vendor:Other Category:Other
Power MOSFETIRF624S
Vendor:Other Category:Other
The IRF624S has seven features.The first one is surface mount.The second one is available in tape & reel.The third one is dynamic dv/dt rating.The fourth one is repetitive avalanche rated.The fifth one is fast switch...IRF624PbF
Vendor:Other Category:Other
The IRF624PbF has 6 features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is fast switching.The fourth one is ease of paralleting.The fifth one is simple drive re...IRF624B
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRF624B has been especially tailored to minimize on-stat...IRF624A
Mfg:IR Pack:TO-220 Vendor:Other Category:Other
IRF624, SiHF624
Vendor:Other Category:Other
Power MOSFET IRF624, SiHF624IRF6218S
Vendor:Other Category:Other
IRF6218PbF
Mfg:N/A Pack:N/A D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 150V 27A TO-220ABIRF6218
Vendor:Other Category:Other
IRF6217PBF
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 150V 700MA 8-SOICIRF6217
Vendor:Other Category:Other
IRF6216PbF
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 150V 2.2A 8-SOICIRF6216
Vendor:Other Category:Other
IRF6215SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 150V 13A D2PAKThe IRF6215SPbF is designed as the fifth generation HEXFET from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast ...IRF6215S
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF6215S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF6215PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 150V 13A TO-220ABFifth Generation HEXFETs IRF6215PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru...IRF6215L
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF6215L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF6215
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 150V 13A TO-220ABFifth Generation HEXFETs IRF6215 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRF620S, SiHF620S
Vendor:Other Category:Other
Power MOSFET IRF620S, SiHF620SIRF620S
Vendor:Other Category:Other
The IRF620S is a kind of International rectifier, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is available in SMD-220 package...IRF620PbF
Vendor:Other Category:Other
The IRF620PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. IRF620PbF has six features.The...IRF620FI
Mfg:IR Pack:N/A D/C:N/A Vendor:Other Category:Other
IRF620B
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRF620B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRF620B has been especially tailored to minimize on-stat...IRF620A
Mfg:SEC Pack:TO220-3 D/C:90+ Vendor:Other Category:Other
IRF620, SiHF620
Vendor:Other Category:Other
Power MOSFET IRF620, SiHF620IRF620
Mfg:IR Pack:TO-220 D/C:2006 Vendor:Other Category:Other
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operatio...IRF6156
Mfg:IR Pack:06+ D/C:805 Vendor:Other Category:Other
True chip-scale packaging is available from International Rectifier.Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the ind...IRF6150
Mfg:IR D/C:4000 Vendor:International Rectifier (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 20V 7.1A FLIP-FETTrue chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques of IRF6150 and a unique packaging concept, extremely low on-resistance and the highest power densitie...IRF614S, SiHF614S
Vendor:Other Category:Other
Power MOSFET IRF614S, SiHF614SIRF614S
Vendor:Other Category:Other
The IRF614S is a kind of International rectifier, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is available in SMD-220 package...IRF614B
Mfg:TO-220 Pack:100 D/C:FSC Vendor:Other Category:Other
These N-Channel IRF614B enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of IRF614B has been especially tailored to minimize on-s...IRF614, SiHF614
Vendor:Other Category:Other
Power MOSFET IRF614, SiHF614IRF614
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
This is an N-Channel enhancement mode silicon gate power field effect transistor. IRF614 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mo...IRF610S, SiHF610S
Vendor:Other Category:Other
Power MOSFET IRF610S, SiHF610SIRF610B
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of IRF610B has been especially tailored to minimize on-state res...IRF610A
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
IRF6100PbF
Mfg:IR D/C:704 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 20V 5.1A FLIPFETTrue chip-scale packaging is available from International Rectifier IRF6100PbF. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densiti...IRF6100
Vendor:International Rectifier (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 20V 5.1A FLIP-FETTrue chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques,and a unique packaging concept, extremely low on-resistance and the highest power densities in the in...IRF610, SiHF610
Vendor:Other Category:Other
Power MOSFET IRF610, SiHF610IRF610
Mfg:IR Pack:T0-220 D/C:09+ Vendor:Other Category:Other
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operatio...IRF5YZ48CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5YZ48CM, combined with...IRF5Y9540CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y9540CM, combined wit...IRF5Y6215CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast swit...IRF5Y540CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y540CM, combined with...IRF5Y5305CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs IRF5Y5305CM from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with t...IRF5Y3710CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y3710CM, combined wit...IRF5Y3315CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y3315CM, combined wit...IRF5Y3205CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y3205CM, combined wit...IRF5Y31N20
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y31N20, combined with...IRF5Y1310CM
Mfg:IR Pack:TO-257AA D/C:00+ Vendor:Other Category:Other
IRF5NJZ48
Mfg:IR Pack:SMD-0.5 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJZ48, combined with ...IRF5NJZ34
Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJZ34, combined with ...IRF5NJ9540
Mfg:IR Pack:SMD-0.5 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ9540, combined with...