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Index I : IRF5NJ6215,IRF5NJ540,IRF4435,
IRF5NJ6215
Mfg:IR Pack:SMD-0.5 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ6215, combined with...IRF5NJ540
Mfg:IR Pack:SMD-0.5 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ540, combined with ...IRF5NJ5305
Mfg:IR Pack:SMD-0.5 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ5305, combined with...IRF5NJ3315
Mfg:IR Pack:SMD-0.5 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ3315, combined with...IRF5N5210
Vendor:Other Category:Other
IRF5N4905
Mfg:IR Pack:SMD-1 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5N4905, combined with ...IRF5N3710
Mfg:IR Pack:SMD-1 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5N3710, combined with ...IRF5N3415
Mfg:IR Pack:SMD-1 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5N3415, combined with ...IRF5N3205
Mfg:IR Pack:SMD-1 D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5N3205, combined with ...IRF5M5210
Mfg:IR Pack:TO-254AA D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5M5210, combined with ...IRF5M4905
Mfg:IR Pack:SOP D/C:240 Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5M4905, combined with ...IRF5M3710
Mfg:IR Pack:TO-254AA D/C:00+ Vendor:Other Category:Other
IRF5M3415
Mfg:IR Pack:TO-254AA D/C:00+ Vendor:Other Category:Other
IRF5M3205
Mfg:IR Pack:TO-254AA D/C:00+ Vendor:Other Category:Other
IRF5EA1310
Mfg:IR Pack:28-pin LCC D/C:00+ Vendor:Other Category:Other
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5EA1310, combined with...IRF5852
Mfg:IOR Pack:SOT23-6 D/C:06+ Vendor:Other Category:Other
These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5852 provides the designer with an extremely eff...IRF5851PbF
Vendor:Other Category:Other
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5851PbF provides the designer with an extr...IRF5851
Mfg:IOR Pack:SOT23-6 D/C:06+ Vendor:Other Category:Other
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5851 provides the designer with an extreme...IRF5850
Vendor:Other Category:Other
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5850 provides the designer with an extremely eff...IRF5810
Vendor:Other Category:Other
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5810 provides the designer wi...IRF5806
Vendor:Other Category:Other
New trench HEXFET® Power MOSFETs from International Rectifier IRF5806 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device ...IRF5805
Vendor:International Rectifier Category:Discrete Semiconductor Products
DIODE MOSFET PCH-30V -3.8A 6TSOPThese P-channel MOSFETs from International Rectifier 6 utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5805 provides the designer with an extremely e...IRF5804
Mfg:IR Pack:SOT-163 D/C:07+(ROHS) Vendor:Other Category:Other
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5804 provides the designer wit...IRF5803D2PbF
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 40V 3.4A 8-SOICThe FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing te...IRF5803D2
Vendor:Other Category:Other
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing te...IRF5803
Vendor:Other Category:Other
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5803 provides the designer wit...IRF5802PbF
Vendor:Other Category:Other
IRF5802
Mfg:IOR Pack:SOT23-6 D/C:06+ Vendor:Other Category:Other
IRF5801
Mfg:IR Pack:SOT-163 D/C:07+/08+ Vendor:Other Category:Other
IRF5800PbF
Vendor:Other Category:Other
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5800PbF provides the designer with an extremely ...IRF5800
Vendor:Other Category:Other
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5800 provides the designer with an extremely eff...IRF550A
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
IRF540ZSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 36A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRF540ZSPbF are a ...IRF540ZS
Mfg:IR Pack:D2-Pak D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications IRF540ZS, ID = 36A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of ...IRF540ZPbF
Mfg:N/A Pack:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 36A TO-220ABSpecifically designed for Automotive applications IRF540ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this de...IRF540ZLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 36A TO-262Specifically designed for Automotive applications IRF540ZLPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this d...IRF540ZL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Specifically designed for Automotive applications IRF540ZL, ID = 36A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of ...IRF540Z
Mfg:IR Pack:TO220 D/C:06+ Vendor:Other Category:Other
Specifically designed for Automotive applications, ID = 36A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this desi...IRF540S, SiHF540S
Vendor:Other Category:Other
Power MOSFET IRF540S, SiHF540SIRF540NST
Vendor:Other Category:Other
The IRF540NST is designed as one kind of advanced HEXFET® power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The device has some points of features: (1)...IRF540NSPbF
Mfg:IR Pack:SMD D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 33A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF540NSPbF, combined with the fast switchin...IRF540NS
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 33A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF540NS benefit, combined with the fast switching speed and...IRF540NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 33A TO-220ABThe IRF540NPBF is a HEXFET power MOSFET.Advanced HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with...IRF540NL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
IRF540N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 33A TO-220ABThe IRF540N 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET. The feature of the IRF540N are:(1)Ultra Low On-Resistance- rDS(ON)= 0.040, VGS = 10V; (2)Simulation Models- Temperature Compensated PSPICE and SABER Electrical M...IRF540A
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CH 100V 28A TO-220IRF540, SiHF540
Vendor:Other Category:Other
Power MOSFET IRF540, SiHF540IRF540
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 100V 22A TO-220This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. IRF540 new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low v...IRF530S, SiHF530S
Vendor:Other Category:Other
Power MOSFET IRF530S, SiHF530SIRF530NSPbF
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 17A D2PAKIRF530NS/L
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF530NS/L benefit, combined with the fast switching speed and ruggedi...IRF530NS
Mfg:IR Pack:D2PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit of IRF530NS, combined with the fast switching sp...IRF530NPbF
Mfg:IR Pack:TO-220 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 17A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF530NPbF, combined with the fast switchin...IRF530NLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 17A TO-262IRF530NL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit of IRF530NL, combined with the fast switching sp...IRF530N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 17A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF530N, combined with the fast switching ...IRF530FP
Vendor:Other Category:Other
IRF530A
Mfg:FAICHILD Pack:TO-220 D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CH 100V 14A TO-220IRF5305S/L
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF5305S/L, combined with the fast switching speed and...IRF5305S
Mfg:IR Pack:TO-263 D/C:09+ Vendor:Other Category:Other
IRF5305PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 31A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF5305PbF, combined with the fast switching speed and...IRF5305L
Mfg:IR Pack:TO-262 D/C:06+ Vendor:Other Category:Other
IRF5305
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 31A TO-220ABThe IRF5305 is a HEXFET power MOSFET.Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fas...IRF530, SiHF530
Vendor:Other Category:Other
Power MOSFET IRF530, SiHF530IRF530
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 100V 14A TO-220This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design of IRF530 also offers a draintosource diode with a fast recovery time. Designed f...IRF5210S
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 40A D2PAKIRF5210L
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF5210L, combined with the fast switching speed and r...IRF5210
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 40A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF5210,combined with the fast switching speed and rug...IRF520VSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 9.6A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit of IRF520VSPbF, combined with the fast switching ...IRF520VS
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VS, combined with the fast switching s...IRF520VPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 9.6A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VPbF, combined with the fast switching...IRF520VL
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VL, combined with the fast switching...IRF520V
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520V, combined with the fast switching ...IRF520S, SiHF520S
Vendor:Other Category:Other
Power MOSFET IRF520S, SiHF520SIRF520NPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 9.7A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520NPbF, combined with the fast switching speed and...IRF520NLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 9.7A TO-262 The IRF520NSPbF and IRF520NLPbF has 6 features.The first one is advanced process technology.The second one is surface mount (IRF520NS).The third one is low-profit through-hole(IRF520NL).The fourth one is 175 operat...IRF520N
Mfg:IR Pack:TO-220 D/C:06+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520N, combined with the fast switching speed and ...IRF520L
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520L, combined with the fast switching speed and r...IRF520FI
Mfg:ST Pack:2500 D/C:IC Vendor:Other Category:Other
IRF520F
Vendor:Other Category:Other
The IRF520F is a kind of International rectifier, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is available in SMD-220 package...IRF520A
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
IRF520, SiHF520
Vendor:Other Category:Other
Power MOSFET IRF520, SiHF520IRF520
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
IRF510S, SiHF510S
Vendor:Other Category:Other
Power MOSFET IRF510S, SiHF510SIRF510A
Mfg:IR Pack:TO-220 Vendor:Other Category:Other
IRF510, SiHF510
Vendor:Other Category:Other
Power MOSFET IRF510, SiHF510IRF500
Pack:TO-220 Vendor:Other Category:Other
IRF4905STRLPBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 42A D2PAKThe IRF4905STRLPBF is a kind of fifth generation HEXFETs from international rectifier which utilize advanced processing techniques to achieve extremly low on-resistance per silicon area. The features of IRF4905STRLPBF in...IRF4905SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 42A D2PAKFeatures of this design are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF4905SPbF combine to make this design an extremely efficient and r...IRF4905S
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 74A D2PAKIRF4905PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 74A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF4905PbF, combined with the fast switching speed and...IRF4905LPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 42A TO-262Features of IRF4905LPbF are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for ...IRF4905L
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 74A TO-262The IRF4905L is a kind of fifth generation HEXFETs from international rectifier which utilize advanced processing techniques to achieve extremly low on-resistance per silicon area. The features of IRF4905L include: (1)ad...IRF4905
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 74A TO-220ABThe IRF4905 is a kind of fifth generation HEXFETs from international rectifier which utilize advanced processing techniques to achieve extremly low on-resistance per silicon area.This benefit, combined with the fast swit...IRF460A
Vendor:Other Category:Other
The IRF460A is the key to International Rectifier's advanced line of power MOSFET transistors. The features of IRF460A are: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Driv...IRF460
Mfg:IR Pack:TO-3 D/C:09+ Vendor:Other Category:Other
The HEXFET® technology of the IRF460 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: ...IRF-46
Vendor:Other Category:Other
Inductors - Epoxy Conformal Coated, Axial Leaded IRF-46IRF453
Vendor:Other Category:Other
The IRF453 is the key to International Rectifier's advanced line of power MOSFET transistors. The features of IRF453 are: (1)low RDS(ON) at high voltage; (2)improved inductive ruggedness; (3)excellent high voltage stabil...IRF450
Mfg:IR Pack:TO-3 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 500V 12A TO-3-3IRF4435
Mfg:IOR Pack:SMD-8 Vendor:Other Category:Other
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer of IRF4435 wit...