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Index I : IRFB3206PbF,IRFB3206G,IRF9520N,
IRFB3206PbF
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 210A TO-220ABIRFB3206G
Vendor:Other Category:Other
IRFB31N20DPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 31A TO-220ABIRFB31N20D
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 31A TO-220ABIRFB30N20D
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
IRFB3077PbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CHAN 75V 210A TO-220AB IRFB3077PbFIRFB3004
Vendor:Other Category:Other
IRFB260NPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 56A TO-220ABIRFB260N
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 56A TO-220ABIRFB260
Vendor:Other Category:Other
The features of IRFB260 are: (1)low gate-to-drain charge to reduce switching losses; (2)fully characterized capacitance including effective COSS to simplify design; (3)fully characterized avalanche voltage and current. ...IRFB23N20DPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 24A TO-220ABIRFB23N20D
Mfg:IR Vendor:Other Category:Other
IRFB23N15DPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 23A TO-220ABIRFB23N15D
Mfg:IR Pack:4 D/C:220 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 23A TO-220ABIRFB23N15
Vendor:Other Category:Other
The features of IRFB23N15 are: (1)low gate-to-drain charge to reduce switching losses; (2)fully characterized capacitance including effective COSS to simplify design; (3)fully characterized avalanche voltage and current....IRFB20N50KPbF
Mfg:IR Vendor:Other Category:Other
IRFB20N50K
Mfg:IR Pack:03+ D/C:To-220 Vendor:Other Category:Other
IRFB18N50KPbF
Mfg:IR Pack:TO-220 D/C:07+ Vendor:Other Category:Other
IRFB18N50K
Vendor:Other Category:Other
The IRFB18N50K is a kind of rectifier whose VDSS:500V, RDS(ON): 0.26, ID:17A. The applications and benefits of IRFB18N50K can be summarized as (1)switch mode power supply (SMPS); (2)uninterruptible power supply; (3)high...IRFB17N60K
Mfg:IR Pack:TO220-3 D/C:04+ Vendor:Other Category:Other
IRFB17N50LPbF
Mfg:VISHAY D/C:07+ Vendor:Other Category:Other
IRFB17N50L
Vendor:Other Category:Other
IRFB17N20DPbF
Mfg:669 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 16A TO-220ABIRFB17N20D
Vendor:Other Category:Other
IRFB16N60L
Vendor:Other Category:Other
The features of IRFB16N60L are: (1)superfast body diode eliminateds the need for external diodes in ZVS applicantions; (2)lower gate charge results in simpler drive requirements; (3)enhanced dv/dt capabilities offer impr...IRFB16N50K
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
IRFB13N50A
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
IRFB11N50A
Mfg:IR Pack:TO-220 D/C:2009-4-5 Vendor:Other Category:Other
IRFAG50
Mfg:IR Pack:TO-3 D/C:N/A Vendor:Other Category:Other
The HEXFET® technology IRFAG50 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...IRFAG40
Mfg:IR Pack:TO-204AA D/C:05+ Vendor:Other Category:Other
The HEXFET® technology IRFAG40 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...IRFAG30
Mfg:IR Pack:TO-3 D/C:02+ Vendor:Other Category:Other
The HEXFET® technology IRFAG30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...IRFAF50
Mfg:IRF Vendor:Other Category:Other
The HEXFET® technology IRFAF50 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...IRFAF40
Mfg:IRF Vendor:Other Category:Other
IRFAF30
Mfg:IR Pack:TO-204AA D/C:05+ Vendor:Other Category:Other
The HEXFET(C) technology IRFAF30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very l...IRFAE50
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
IRFAE40
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
IRFAE30
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
The HEXFET(C) technology IRFAE30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very lo...IRFAC42
Mfg:IR Pack:N/A D/C:N/A Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m...IRFAC40
Mfg:IR Pack:TO-204AA D/C:05+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors IRFAC40. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava...IRFAC30
Mfg:IR Pack:TO-3 D/C:00+ Vendor:Other Category:Other
The HEXFET(C) technology IRFAC30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low o...IRF9Z34S
Mfg:IR Pack:TO-263 D/C:09+ Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z34S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9Z34NS
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 19A D2PAKFifth Generation HEXFETs IRF9Z34NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9Z34NL
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9Z34NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9Z34N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 19A TO-220ABFifth Generation HEXFETs IRF9Z34N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9Z34L
Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z34L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9Z34, SiHF9Z34
Vendor:Other Category:Other
Power MOSFET IRF9Z34, SiHF9Z34IRF9Z34
Vendor:Other Category:Other
The IRF9Z34 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The...IRF9Z30PbF
Mfg:IR Pack:07+ Vendor:Other Category:Other
The HEXFET® technology IRF9Z30PbF is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resiste...IRF9Z24S
Mfg:IR Pack:TO-263 D/C:09+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...IRF9Z24NS
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9Z24NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9Z24NPBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 12A TO-220ABThe IRF9Z24NPBF is a HEXFET power MOSFET.Fifth generation HEXFEfs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with th...IRF9Z24NL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9Z24NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9Z24N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 12A TO-220ABFifth Generation HEXFETs IRF9Z24N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9Z24L
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z24L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9Z24, SiHF9Z24
Vendor:Other Category:Other
Power MOSFET IRF9Z24, SiHF9Z24IRF9Z24
Vendor:Other Category:Other
The IRF9Z24 is a kind of power mosfets whose VDS=-60V, RDS(ON)=0.28, ID=-9.7A. If you want to know about this IC, please go to our website. The features of IRF9Z24 can be summarized as (1)lower rosrom; (2)improved induc...IRF9Z20, SiHF9Z20
Vendor:Other Category:Other
Power MOSFET IRF9Z20, SiHF9Z20IRF9Z14S
Mfg:IR Pack:TO-263 D/C:09+ Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z14S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9Z14L
Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z14L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9Z14, SiHF9Z14
Vendor:Other Category:Other
Power MOSFET IRF9Z14, SiHF9Z14IRF9Z10, SiHF9Z10
Vendor:Other Category:Other
Power MOSFET IRF9Z10, SiHF9Z10IRF9956
Mfg:IR Pack:SMD Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9956 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9953
Mfg:IR Pack:SMD Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9953 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRF9952
Mfg:IR Pack:SMD Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9952 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRF9910PbF
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2N-CH 20V 10A 8-SOICIRF9910
Mfg:IRF Pack:SOP8 D/C:09+ Vendor:Other Category:Other
IRF9640SPbF
Vendor:Other Category:Other
The IRF9640SPbF is designed as third generation HEXFET from international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effectiven...IRF9640S, SiHF9640S
Vendor:Other Category:Other
Power MOSFETIRF9640, SiHF9640
Vendor:Other Category:Other
Power MOSFET IRF9640, SiHF9640IRF9640
Mfg:N/A D/C:TO-220 Vendor:Other Category:Other
These are P-Channel enhancement mode silicon-gate power field-effect transistors IRF9640. They are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche...IRF9630S, SiHF9630S
Vendor:Other Category:Other
Power MOSFET IRF9630S, SiHF9630SIRF9630, SiHF9630
Vendor:Other Category:Other
Power MOSFET IRF9630, SiHF9630IRF9630
Mfg:IR Pack:TO-220 D/C:2006-4-5 0:00 Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors IRF9630. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc...IRF9620S, SiHF9620S
Vendor:Other Category:Other
Power MOSFET IRF9620S, SiHF9620SIRF9620, SiHF9620
Vendor:Other Category:Other
Power MOSFET IRF9620, SiHF9620IRF9610S, SiHF9610S
Vendor:Other Category:Other
Power MOSFET IRF9610S, SiHF9610SIRF9610, SiHF9610
Vendor:Other Category:Other
Power MOSFET IRF9610, SiHF9610IRF9540S, SiHF9540S
Vendor:Other Category:Other
Power MOSFET IRF9540S, SiHF9540SIRF9540NSPbF
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 23A D2PAKFeatures of this design are a 150 junction operating temperature IRF9540NSPbF, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliabl...IRF9540NS
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9540NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9540NPBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 23A TO-220ABThe IRF9540NPBF is a HEXFET power MOSFET.Fifth Generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with th...IRF9540NL
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9540NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9540N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 23A TO-220ABFifth Generation HEXFETs IRF9540N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9540, SiHF9540
Vendor:Other Category:Other
Power MOSFET IRF9540, SiHF9540IRF9540
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...IRF9530SPbF
Vendor:Other Category:Other
The IRF9530SPbF is designed as the third generation HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti...IRF9530SMD
Vendor:Other Category:Other
IRF9530S, SiHF9530S
Vendor:Other Category:Other
Power MOSFET IRF9530S, SiHF9530SIRF9530NS
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9530NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9530NL
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9530NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9530N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 14A TO-220ABFifth Generation HEXFETs IRF9530N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF9530-220M
Vendor:Other Category:Other
IRF9530, SiHF9530
Vendor:Other Category:Other
Power MOSFET IRF9530, SiHF9530IRF9530
Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors IRF9530. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc...IRF9520SPbF
Vendor:Other Category:Other
The IRF9520SPbF is deisgned as the third generational HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec...IRF9520S, SiHF9520S
Vendor:Other Category:Other
Power MOSFET IRF9520S, SiHF9520SIRF9520S
Vendor:Other Category:Other
The IRF9520S is one of the HEXFET power MOSFET series.Third generation HEXFETs from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and ...IRF9520NS
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...IRF9520NL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 6.8A TO-262Fifth Generation HEXFETs IRF9520NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF9520N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 6.8A TO-220ABFifth Generation HEXFETs IRF9520N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...