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Position: Home > SiteMap > Index I > Page 376

Index I : IRF3415S,IRF3415PBF,IRF150SMD,

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  • IRF3415S

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...

  • IRF3415PBF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 150V 43A TO-220ABThe IRF3415PBF is one member of the IRF3415 family which is designed as the HEXFET Power MOSFET that has some points of features: (1)advanced process technology; (2)dynamic dv/dt rating; (3)175 operating temperature; (4)...

  • IRF3415L

    Mfg:INTERNATIONALRECTIFIER    Pack:DIP/SOP    D/C:08+    Vendor:Other    Category:Other    
    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3415L benefit, combined with the fast switching speed and ruggedi...

  • IRF3415

    Mfg:IR    Pack:TO-220    D/C:09+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 150V 43A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3415 benefit, combined with the fast switching speed and ruggedize...

  • IRF340

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest '' State of the Art!± design achieves: very low on-...

  • IRF3315S

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315S benefit, combined with the fast switching speed and ruggedi...

  • IRF3315PbF

    Mfg:IR    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 150V 21A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315PbF benefit, combined with the fast switching speed and ruggedi...

  • IRF3315L

    Mfg:IR    Pack:TO-262    D/C:08+    Vendor:Other    Category:Other    
    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315L benefit, combined with the fast switching speed and ruggedi...

  • IRF3315

    Mfg:IR    Pack:TO-220    D/C:09+    Vendor:Other    Category:Other    
    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315 benefit, combined with the fast switching speed and ruggedize...

  • IRF3305PbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 75A TO-220AB IRF3305PbF is a kind of automotive MOSFET.Here you can get some information about the features.First is that IRF3305PbF is designed to support linear Gate Drive Applications.The second is 175 operating temperature....

  • IRF330

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest ''State of the Art!± design achieves: very low on-s...

  • IRF323

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF323 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode ...

  • IRF322

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode ...

  • IRF321

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF321 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode ...

  • IRF3205ZSPbF

    Mfg:IR    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 75A D2PAKSpecifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF32...

  • IRF3205ZS

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF...

  • IRF3205ZPbF

    Mfg:IR    Pack:TO-220    D/C:05+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 75A TO-220ABSpecifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF32...

  • IRF3205ZLPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 75A TO-262Specifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF32...

  • IRF3205ZL

    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRF3205ZL utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this des...

  • IRF3205Z

    Mfg:TO-220AB    Pack:7850    D/C:IR    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRF3205Z utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this desi...

  • IRF3205SPbF

    Mfg:IR    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 110A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and rugg...

  • IRF3205S

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 110A D2PAKThe IRF3205S is a HEXFET power MOSFET.Advanced HEXFET Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with ...

  • IRF3205PbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 110A TO-220ABAdvanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and rugge...

  • IRF3205L

    Mfg:IR    Pack:TO-220    D/C:09+    Vendor:Other    Category:Other    
    Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. IRF3205L benefit, combined with the fast switching speed and rug...

  • IRF3205

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 110A TO-220ABPower MOSFETs of the IRF3205 from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe...

  • IRF320

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of ...

  • IRF30AS

    Vendor:Other    Category:Other    

  • IRF3007SPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 62A D2PAKSpecifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this H...

  • IRF3007PbF

    Mfg:IR    Pack:2007+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 75A TO-220ABSpecifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007PbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional...

  • IRF3007LPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 62A TO-262Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007LPbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional...

  • IRF3007L

    Mfg:IR    Pack:TO-262    D/C:5000    Vendor:Other    Category:Other    

  • IRF3007

    Mfg:TO-220AB    Pack:7850    D/C:IR    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications of the IRF3007, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fe...

  • IRF3000

    Mfg:IOR    Pack:SMD-8    D/C:04+    Vendor:Other    Category:Other    

  • IRF300

    Mfg:IR    Pack:SSOP8    D/C:2003    Vendor:Other    Category:Other    

  • IRF2907ZSPbF

    Mfg:IR    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET of the IRF2907ZSPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features ...

  • IRF2907ZS-7PPbF

    Mfg:IR    Pack:N/A    D/C:08+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 160A D2PAK7Specifically designed for high current, high reliabil- ity applications, this HEXFET® Power MOSFET of the IRF2907ZS-7PPbF utilizes the latest processing techniques and ad- vanced packaging technology to achieve extr...

  • IRF2907ZS

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications of the IRF2907ZS, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of ...

  • IRF2907ZPbF

    Mfg:IR    Pack:T0-20    D/C:07+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2907ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features f...

  • IRF2907ZLPbF

    Mfg:IR    Pack:N/A    D/C:08+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 170A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2907ZL

    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications of the IRF2907ZL, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of ...

  • IRF2907Z

    Mfg:IR    Pack:TO-220    D/C:08+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a...

  • IRF2903ZSPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 30V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2903ZS

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET of the IRF2903ZS utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of t...

  • IRF2903ZPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 30V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2903ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features o...

  • IRF2903ZLPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 30V 75A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2903ZL

    Mfg:TO-262    Pack:7850    D/C:IR    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications of the IRF2903ZL, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of t...

  • IRF2903Z

    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications of the IRF2903Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of th...

  • IRF2807ZPbF

    Mfg:682    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2807ZPbF,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of...

  • IRF2807Z

    Mfg:TO-220AB    Pack:7850    D/C:IR    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2807SPbF

    Mfg:IR    Pack:2007+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 82A D2PAKAdvanced HEXFET® Power MOSFETs of the IRF2807SPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...

  • IRF2807S

    Vendor:Other    Category:Other    
    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...

  • IRF2807PbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 82A TO-220ABThe IRF2807PbF is designed as one kind of HEXFET Power MOSFET device that has some points of features:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175°C operating temperature; (...

  • IRF2807LPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 82A TO-262Advanced HEXFET® Power MOSFETs of the IRF2807LPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...

  • IRF2807L

    Mfg:IR    Pack:TO-262     D/C:04+    Vendor:Other    Category:Other    
    Advanced HEXFET® Power MOSFETs of the IRF2807L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...

  • IRF2807

    Mfg:IR    Pack:TO220AB    D/C:08+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 82A TO-220ABAdvanced HEXFET Power MOSFETs of the IRF2807 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...

  • IRF2805SPbF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 135A D2PAKSpecifically designed for Automotive applications of the IRF2805SPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. Additional features of...

  • IRF2805S

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques of the IRF2805S to achieve extremely low on-resistance per silicon area. Additional features of t...

  • IRF2805PbF

    Mfg:IR    Pack:TO-220    D/C:07+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 55V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2805PbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of...

  • IRF2805LPbF

    Mfg:IR    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. Additional features of this product of th...

  • IRF2805L

    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are ...

  • IRF2805

    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2804SPbF

    Mfg:N/A    Pack:NA/    D/C:09+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 40V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2804S-7PPbF

    Mfg:IR    Pack:D2-PAK 7PIN    D/C:0725+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 40V 160A D2PAK-7Specifically designed for Automotive applications,this HEXFETTM Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the ...

  • IRF2804S-7P

    Mfg:TO-263    Pack:150    D/C:IR    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2804S

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2804PbF

    Mfg:IR    Pack:TO-220    D/C:07+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 40V 75A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2804LPbF

    Mfg:3381    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 40V 75A TO-220-3Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2804L

    Mfg:IR    Pack:04+    D/C:262    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 40V 75A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...

  • IRF2804

    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a...

  • IRF250SMD

    Vendor:Other    Category:Other    

  • IRF250

    Vendor:Other    Category:Other    

  • IRF247

    Mfg:IR\MOT    Pack:.    D/C:03+    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of...

  • IRF246

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of o...

  • IRF245

    Mfg:IR    Pack:TO-3    D/C:03+    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of...

  • IRF244

    Mfg:IR    Pack:TO-3    D/C:03+    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of o...

  • IRF240SMD

    Vendor:Other    Category:Other    

  • IRF240

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    ThisN-Channelenhancementmodesilicongatepowereld effect transistor of the IRF240 is an advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energyinthebreakdownavalanchemodeofoperation....

  • IRF-24

    Vendor:Other    Category:Other    
    Inductors - Epoxy Conformal Coated, Axial Leaded IRF-24

  • IRF237

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...

  • IRF236

    Mfg:IR    Pack:TO-3    D/C:03+    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...

  • IRF235

    Mfg:IR    Pack:TO-3    D/C:03+    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...

  • IRF234

    Mfg:INTERNATIONALRECTIFIER    Pack:DIP/SOP    D/C:08+    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...

  • IRF233

    Mfg:IR/HAR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of o...

  • IRF232

    Mfg:IR/HAR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of op...

  • IRF231

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of op...

  • IRF230

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of op...

  • IRF223

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of ...

  • IRF222

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of ...

  • IRF221

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of...

  • IRF2204S

    Mfg:IR    Pack:D2-PAK    D/C:09+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design of t...

  • IRF2204

    Mfg:IR    Pack:TO-220    D/C:08+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications of the IRF2204, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t...

  • IRF220

    Mfg:IR    Pack:TO-3    Vendor:Other    Category:Other    
    These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of ...

  • IRF200

    Vendor:Other    Category:Other    

  • IRF1902TRPBF

    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 20V 4.2A 8-SOICThe IRF1902TRPBF is designed as one kind of N-channel HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area that provides the...

  • IRF1902PbF

    Mfg:IR    Pack:SOP-8    D/C:09+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 20V 4.2A 8-SOICThese N-Channel HEXFET® power MOSFETs of the IRF1902PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the desig...

  • IRF1902

    Mfg:IOR    Pack:SMD-8    Vendor:Other    Category:Other    
    These N-Channel HEXFET power MOSFETs of the IRF1902 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer wi...

  • IRF1704

    Mfg:IR/FSC    Pack:TO-220    D/C:05+    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this HEXFET power MOSFET of the IRF1704 has a 200 max operating temperature with a Stripe Plana design that utilizes the latest processing techniques to achieve ...

  • IRF1607PbF

    Mfg:IR    Pack:TO-220    D/C:07+    Vendor:International Rectifier    Category:Discrete Semiconductor Products    
    MOSFET N-CH 75V 142A TO-220ABSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea...

  • IRF1607

    Vendor:Other    Category:Other    
    Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features...

  • IRF150SMD

    Vendor:Other    Category:Other