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Index I : IRF150-IRF500,IRF1503SPbF,IRDCIP1203-A,
IRF150-IRF500
Vendor:Other Category:Other
IRF1503SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 75A D2PAKSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional feat...IRF1503S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea...IRF1503PbF
Vendor:Other Category:Other
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this H...IRF1503LPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 75A TO-262Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional feat...IRF1503L
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea...IRF1503
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this H...IRF150
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
IRF14229
Vendor:Other Category:Other
IRF140SMD
Vendor:Other Category:Other
IRF1407S
Vendor:Other Category:Other
Power MOSFETs of the IRF1407S from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRF1407PbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 130A TO-220ABSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea...IRF1407L
Vendor:Other Category:Other
Power MOSFETs of the IRF1407L from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRF1407
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 130A TO-220ABSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features...IRF1405ZSPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF1405ZS-7P
Vendor:Other Category:Other
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a ...IRF1405ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF1405ZPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF1405ZLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a...IRF1405ZL-7P
Vendor:Other Category:Other
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of t...IRF1405ZL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF1405Z
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF1405SPbF
Mfg:IR Pack:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 131A D2PAKStripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1405SPbF ...IRF1405S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1405S are...IRF1405PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 169A TO-220ABSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional feat...IRF1405LPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 131A TO-262Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1405LPbF ...IRF1405L
Mfg:TO-262 Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 131A TO-262Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF1405L are...IRF1405
Mfg:IR Pack:TO-220 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 169A TO-220ABSpecifically designed for Automotive applications of the IRF1405, this ? Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Ad...IRF1404ZPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 75A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of the...IRF1404Z
Mfg:IR D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 75A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF1404S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 162A D2PAKSeventh Generation HEXFET Power MOSFETs of the IRF1404S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast...IRF1404PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 202A TO-220ABSeventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe...IRF1404L
Vendor:Other Category:Other
Seventh Generation HEXFET Power MOSFETs of the IRF1404L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast sw...IRF1404
Mfg:IR Pack:TO-220 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 202A TO-220ABSeventh Generation HEXFET® Power MOSFETs of the IRF1404 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ...IRF140
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
ThisN-Channelenhancementmodesilicongatepower?eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci?ed level of energyinthebreakdownavalanchemodeofoperation.Allof these po...IRF1324S-7PPbF
Mfg:N/A Pack:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CHAN 24V 429A D2PAK-7IRF1324
Vendor:Other Category:Other
IRF1312SPbF
Vendor:Other Category:Other
IRF1312S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
IRF1312PbF
Mfg:IR Pack:2007+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 80V 95A TO-220ABIRF1312LPbF
Vendor:Other Category:Other
IRF1312L
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
IRF1312
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
IRF1310S
Mfg:52852 Pack: I R Vendor:Other Category:Other
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRF1310NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 42A D2PAKFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...IRF1310NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 42A TO-220ABIRF1310NPbF is a kind of power MOSFET which utilize advanced processing technology to achieve extremely low on-resistance per silicon area.Another notabe benefits is the fast switching speed and ruggedized device design....IRF1310NL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Fifth Generation HEXFETs of the IRF1310NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRF1310N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 42A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...IRF130SMD
Vendor:Other Category:Other
IRF1302S
Mfg:IR Pack:TO-263 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 20V 174A D2PAKSpecifically designed for Automotive applications of the IRF1302S, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Add...IRF1302PbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 20V 180A TO-220ABSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional feat...IRF1302L
Mfg:IR Pack:04+ D/C:262 Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF1302L, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Add...IRF1302
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
Specifically designed for Automotive applications IRF1302, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional f...IRF130
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest "State of the Art"± design achieves: very low on-st...IRF123
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF123 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode ...IRF122
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of ...IRF121
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of ...IRF1205
D/C:05+ Vendor:Other Category:Other
Fifth Generation MOSFETs of the IRF1205 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed an...IRF120
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of ...IRF1104SPbF
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 100A D2PAKFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...IRF1104S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFETs of the IRF1104S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a...IRF1104PbF
Mfg:IR Pack:2007+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 100A TO-220ABFifth Generation HEXFETs of the IRF1104PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchin...IRF1104LPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 100A TO-262Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...IRF1104L
Mfg:IR Pack:04+ D/C:262 Vendor:Other Category:Other
Fifth Generation HEXFETs of the IRF1104L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a...IRF1104
Mfg:N/A Pack:NA/ D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 100A TO-220ABFifth Generation HEXFETs of the IRF1104 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a...IRF1018EPbF
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 79A TO-220ABIRF1010ZSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a ...IRF1010ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a ...IRF1010ZPbF
Mfg:IR D/C:645 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a ...IRF1010ZLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a ...IRF1010ZL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of the...IRF1010Z
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of the...IRF1010NSPbF
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 85A D2PAKAdvanced HEXFET® Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRF1010NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET Power MOSFETs of the IRF1010NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...IRF1010NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 85A TO-220ABAdvanced HEXFET® Power MOSFETs of the IRF1010NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF1010NL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Advanced HEXFET Power MOSFETs of the IRF1010NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...IRF1010N
Mfg:IR Pack:TO-220 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 85A TO-220ABPower MOSFETs of the IRF1010N from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRF1010EZSPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF1010EZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
IRF1010EZPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 75A TO-220ABSpecifically designed for Automotive applications of the IRF1010EZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features ...IRF1010EZLPbF
Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF1010EZLPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features...IRF1010ESPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 84A D2PAKAdvanced HEXFET® Power MOSFETs of the IRF1010ESPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast swit...IRF1010ES
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 84A D2PAKAdvanced HEXFET Power MOSFETs of the IRF1010ES from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching ...IRF1010EPbF
Mfg:IR Pack:TO-220 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 84A TO-220ABAdvanced HEXFET® Power MOSFETs of the IRF1010EPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF1010EL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET Power MOSFETs of the IRF1010EL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching ...IRF1010E
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 84A TO-220ABAdvanced HEXFET Power MOSFETs of the IRF1010E from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRF054SMD
Vendor:Other Category:Other
IRF054
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
The HEXFET technology of the IRF054 is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest '' State of the Art!± design achieves: ver...IRF044SMD
Vendor:Other Category:Other
IRF044
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
IRF034
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
The HEXFET technology of the IRF034 is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest ''State of the Art!± design achieves: very...IRF
Vendor:Other Category:Other
Inductors - Epoxy Conformal Coated, Uniform Roll Coated IRFIRDCIP2005A-A
Vendor:Other Category:Other
IRDCiP2003A-C
Vendor:Other Category:Other
This reference design of the IRDCiP2003A-C is capable of delivering up to a current of 160A with the enclosed heatsink attached at an ambient temperature of 60oC with 400LFM or an ambient temperature of 45oC with 200LFM ...IRDCIP2002-C
Mfg:IR Pack:07+ Vendor:Other Category:Other
IRDCiP2001-C
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Programmers, Development Systems
IC CONVRTR 4PH BUCK 80A W/IP2001In this document, table 1 and figure 1 of the IRDCiP2001-C are provided to enable engineers to easily evaluate the iP2001 in a 4-phase configuration that is capable of providing up to 80A in a lab environment without air...IRDCiP2001-A
Vendor:International Rectifier Category:Programmers, Development Systems
IC CONVRTR 2PH BUCK 40A W/IP2001IRDCIP1206-B
Vendor:Other Category:Other
IRDCIP1206-A
Vendor:Other Category:Other
IRDCIP1203-A
Mfg:IR Pack:07+ Vendor:International Rectifier Category:Programmers, Development Systems
IP1203 REFERENCE DESIGN KIT