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Index I : IS61(64)LPS12836A,IS61(64)LPS12832A,IS41LV4100,
IS61(64)LPS12836A
Vendor:Other Category:Other
The ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applic...IS61(64)LPS12832A
Vendor:Other Category:Other
The ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applic...IS61(64)LF25618A
Vendor:Other Category:Other
The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networki...IS61(64)LF12836A
Vendor:Other Category:Other
The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networki...IS61(64)LF12832A
Vendor:Other Category:Other
The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networki...IS609
Vendor:Other Category:Other
The IS609 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a Microprocessor Compatible Schmitt trigger output mounted in a standard 6 pin dual in line package.IS608X
Vendor:Other Category:Other
The IS607, IS608X series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a light activated silicon bilateral switch performing the functions of a triac mounted in a s...IS608
Vendor:Other Category:Other
The IS607, IS608 series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a light activated silicon bilateral switch performing the functions of a triac mounted in a st...IS607X
Vendor:Other Category:Other
The IS607, IS608 series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a light activated silicon bilateral switch performing the functions of a triac mounted in a st...IS607
Vendor:Other Category:Other
The IS607, IS608 series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a light activated silicon bilateral switch performing the functions of a triac mounted in a st...IS6051
Vendor:Other Category:Other
The IS6051 is an optically coupled isolator consisting of infrared light emitting diode and a light activated silicon controlled rectifier in a standard 6pin dual in line plastic package.IS604X
Vendor:Other Category:Other
The IS604X optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package.IS604
Vendor:Other Category:Other
The IS604 optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package.IS6030
Vendor:Other Category:Other
IS6015
Vendor:Other Category:Other
IS6010
Mfg:ISCM Pack:DIP6 Vendor:Other Category:Other
IS6005
Vendor:Other Category:Other
IS6003
Vendor:Other Category:Other
The IS6003 series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a light activated silicon bilateral switch performing the functions of a triac mounted in a standard...IS-5114
Vendor:Other Category:Other
The IS-5114 is a highly integrated solution for dual-mode digital still-image and video cameras. It combines a number of functions that are required in such devices, including the following:• The IS-5114 is based o...IS5
Vendor:Other Category:Other
IS4N46
Vendor:Other Category:Other
The IS4N45, IS4N46 are optically coupled isolators consisting of an infrared light emitting diode and a NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated te...IS489
Mfg:SHARP Pack:. D/C:07+ Vendor:Other Category:Other
IS488
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
IS487
Mfg:SHARP Pack:DIP-3 D/C:2006 Vendor:Other Category:Other
IS486
Mfg:SHARP Pack:DIP-3 D/C:2006 Vendor:Other Category:Other
IS485
Mfg:SHARP Pack:DIP-3 D/C:2006 Vendor:Other Category:Other
IS482
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
IS481
Mfg:SHARP Pack:DIP-3 D/C:2006 Vendor:Other Category:Other
IS474
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
IS471F
Mfg:SHARP Pack:DIP-4 D/C:0 Vendor:Other Category:Other
IS45S81600B
Vendor:Other Category:Other
ISSI's 128Mb Synchronous DRAM IS45S81600B achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM IS45S81600B is organized...IS45S32400B
Vendor:Other Category:Other
IS45S32200C1
Vendor:Other Category:Other
ISSI's 64Mb Synchronous DRAM IS45S32200C1 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve highspeed data transfer using pipeline architecture. All inputs and outputs...IS45S16800B
Vendor:Other Category:Other
ISSI's 128Mb Synchronous DRAM IS45S16800B achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM IS45S16800B is organized...IS45S16400C1
Vendor:Other Category:Other
ISSI's 64Mb Synchronous DRAM IS45S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outp...IS45S16100C1
Vendor:Other Category:Other
ISSI's 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outp...IS45LV44002B
Vendor:Other Category:Other
The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a sin...IS457
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
IS456
Mfg:SHARP Vendor:Other Category:Other
IS455
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
IS452
Vendor:Other Category:Other
The IS452 is an optically coupled isolator consisting of an infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevat...IS445
Vendor:Other Category:Other
The IS445 is designed as one kind of linear output type OPIC light detectors. Typical applications is copiers.The IS445 has three features. (1)Linear output. (2)Two packages according to mounting method, side view type. ...IS440
Vendor:Other Category:Other
The IS440 is designed as one kind of OPIC light detectors with built-in signal processing circuit for light modulation system. Typical applications include optoelectronic switches and copoers, printers and facsimiles.The...IS43R32400A
Vendor:Other Category:Other
ISSI's 128-Mbit DDR SDRAM IS43R32400A achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory array is internally organized as four banks of 32...IS43R16800A
Vendor:Other Category:Other
IS43R16320A
Vendor:Other Category:Other
ISSI's 512-Mbit DDR SDRAM IS43R16320A achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 12...IS43R16160A
Vendor:Other Category:Other
The following sequence is required for POWER UP of IS43R16160A.1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.)- Apply VDD before or at the same time as VDDQ.- Apply VDDQ bef...IS437
Vendor:Other Category:Other
The IS437 is a kind of built-in Amp.type opic light detector. Features of the IS437 are:(1)built-in Schmidt trigger circuit; (2)high sensitivity ; (3)LSTTL and TTL compatible output; (4)open collector output; (5)low lev...IS435
Vendor:Other Category:Other
The IS435 is a kind of OPIC light detector. The typical applications include floppy disk drives, copiers, printers, facsimiles, VCRs, cassette decks, automatic vending machines. There are some features of IS435 as follo...IS42VS16400C1
Vendor:Other Category:Other
ISSI's 64Mb Synchronous DRAM IS42VS16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and out...IS42VS16100C1
Vendor:Other Category:Other
ISSI's 16Mb Synchronous DRAM IS42VS16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and out...IS42S83200B
Mfg:10000 Pack:ISSI D/C:05+ Vendor:Other Category:Other
ISSI's 256Mb Synchronous DRAM IS42S83200B achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM IS42S83200B is organize...IS42S83200A1
Vendor:Other Category:Other
IS42S83200A1 is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A1 is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge o...IS42S83200A
Mfg:10000 Pack:ISSI D/C:05+ Vendor:Other Category:Other
IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of ...IS42S81600B
Vendor:Other Category:Other
The 128Mb SDRAM IS42S81600B is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V VDD and 3.3V VDDQ memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a sy...IS42S81600A
Vendor:Other Category:Other
IS42S3800D-6TL
Vendor:Other Category:Other
The IS42S3800D-6TL is designed as one kind of 4M words x 32 bits x 4 banks (512-mbit) synchronous dynamic RAM device that ism organized as 8192 rows by 512 columns by 32 bits. And this device provides for programmable Re...IS42S32800B-7TLI
Vendor:ISSI, Integrated Silicon Solution Inc Category:Integrated Circuits (ICs)
IC SDRAM 256MB 143MHZ 86-TSOPIIThe IS42S32800B-7TLI is designed as one kind of 2M words x 32 bits x 4 banks (256-Mbit) synchronous dynamic RAM device that ism organized as 8192 rows by 512 columns by 32 bits. And this device provides for programmable ...IS42S32400B
Vendor:Other Category:Other
The READ command IS42S32400B selects the bank from BA0, BA1 inputs and starts a burst read access to an active row.Inputs A0-A7 provides the starting column location. When A10 is HIGH, this command functions as an AUTO ...IS42S32400A
Vendor:Other Category:Other
IS42S32200E-6TL
Vendor:ISSI, Integrated Silicon Solution Inc Category:Integrated Circuits (ICs)
IC SDRAM 64MB 166MHZ 86-TSOPIIThe IS42S32200E-6TL is designed as one kind of 512K bits x 32 bits x 4 banks (64-Mbit) synchronous dynamic RAM device that is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs ac...IS42S32200C1
Vendor:Other Category:Other
The 64Mb SDRAM IS42S32200C1 is a high speed CMOS, dynamic random-access memory designed to operate in 3.3Vmemory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface...IS42S32200B
Mfg:ISSI Vendor:Other Category:Other
The 64Mb SDRAM IS42S32200B is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface....IS42S32200
Vendor:Other Category:Other
The 64Mb SDRAM IS42S32200 is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface....IS42S16800B
Vendor:Other Category:Other
The 128Mb SDRAM IS42S16800B is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V VDD and 3.3V VDDQ memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a sy...IS42S16800A1
Vendor:Other Category:Other
IS42S16800A
Vendor:Other Category:Other
IS42S16400F-6BL
Vendor:ISSI, Integrated Silicon Solution Inc Category:Integrated Circuits (ICs)
IC SDRAM 64MB 166MHZ 54-BGAThe IS42S16400F-6BL is designed as one kind of 1 Meg bits x 16 bits x 4 banks (64-Mbit) synchronous dynamic RAM device that is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. And the inputs and ou...IS42S16400D
Vendor:Other Category:Other
The 64Mb SDRAM IS42S16400D is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface....IS42S16400C1
Vendor:Other Category:Other
The 64Mb SDRAM IS42S16400C1 is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface...IS42S16400B1
Vendor:Other Category:Other
The 64Mb SDRAM IS42S16400B1 is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internallyconfigured as a quad-bank DRAM with a synchronous interface....IS42S16400B
Vendor:Other Category:Other
The 64Mb SDRAM IS42S16400B is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface....IS42S16400A
Vendor:Other Category:Other
The 64Mb SDRAM IS42S16400A is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface...IS42S16400
Mfg:ISSI Pack:ORG PACKING D/C:08+ Vendor:Other Category:Other
The 64Mb SDRAM IS42S16400 is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. ...IS42S16160C-7TLI
Vendor:Other Category:Other
The IS42S16160C-7TLI is one member of the IS42S16160C family which is designed as the 256 Mb Single Data Rate Synchronous DRAM device that achieves very high speed data rates up to 166MHz, and are suitable for main memor...IS42S16160C-7TL
Vendor:Other Category:Other
The IS42S16160C-7TL is one member of the IS42S16160C family which is designed as the 256 Mb Single Data Rate Synchronous DRAM device that achieves very high speed data rates up to 166MHz, and are suitable for main memori...IS42S16160B
Vendor:Other Category:Other
ISSI's 256Mb Synchronous DRAM IS42S16160B achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM IS42S16160B is organize...IS42S16160A1
Vendor:Other Category:Other
IS42S83200A1 is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A1 is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge o...IS42S16160A
Vendor:Other Category:Other
IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of ...IS42S16128
Vendor:Other Category:Other
ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs ...IS42S16100C1
Vendor:Other Category:Other
ISSI's 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outp...IS42S16100A1
Mfg:12000 Pack:ISSI Vendor:Other Category:Other
ISSI's 16Mb Synchronous DRAM IS42S16100A1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outp...IS42S16100
Mfg:ISSI D/C:05+ Vendor:Other Category:Other
ISSI's 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and output...IS42LS81600A
Vendor:Other Category:Other
IS42LS32400A
Vendor:Other Category:Other
IS42LS16800A
Vendor:Other Category:Other
IS42G32256
Mfg:ISSI Pack:N/A D/C:99+ Vendor:Other Category:Other
The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. P...IS422
Vendor:Other Category:Other
The IS422 Series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a monolithic silicon detector performing the functions of a zero crossing bilateral triac mounted in ...IS421
Vendor:Other Category:Other
The IS421 Series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode coupled with a monolithic silicon detector performing the functions of a zero crossing bilateral triac mounted in ...IS41LV85125A
Vendor:Other Category:Other
The ISSI IS41C85125A and IS41LV85125A are 512,288 x 8- bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns pe...IS41LV85125
Vendor:Other Category:Other
The ISSI IS41C85125 and IS41LV85125 are 512,288 x 8-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns per 8-...IS41LV85120A
Vendor:Other Category:Other
The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8- bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a...IS41LV85120
Vendor:Other Category:Other
The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a si...IS41LV8205A
Vendor:Other Category:Other
The ISSI IS41LV8205A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4- bit word.T...IS41LV8205
Vendor:Other Category:Other
The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per ...IS41LV8200A
Vendor:Other Category:Other
The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a sing...IS41LV8200
Vendor:Other Category:Other
The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses ...IS41LV4405X
Vendor:Other Category:Other
The ISSI 4405x Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-...IS41LV4400X
Vendor:Other Category:Other
The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses wit...IS41LV4100
Vendor:Other Category:Other
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a si...