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Mfg:IR Vendor:Other Category:Other
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 23A TO-220AB
Mfg:IR Pack:4 D/C:220 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 23A TO-220AB
Vendor:Other Category:Other
The features of IRFB23N15 are: (1)low gate-to-drain charge to reduce switching losses; (2)fully characterized capacitance including effective COSS to simplify design; (3)fully characterized avalanche voltage and current....
Mfg:IR Vendor:Other Category:Other
Mfg:IR Pack:03+ D/C:To-220 Vendor:Other Category:Other
Mfg:IR Pack:TO-220 D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The IRFB18N50K is a kind of rectifier whose VDSS:500V, RDS(ON): 0.26, ID:17A.
The applications and benefits of IRFB18N50K can be summarized as (1)switch mode power supply (SMPS); (2)uninterruptible power supply; (3)high...
Mfg:IR Pack:TO220-3 D/C:04+ Vendor:Other Category:Other
Mfg:VISHAY D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:669 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 16A TO-220AB
Vendor:Other Category:Other
Vendor:Other Category:Other
The features of IRFB16N60L are: (1)superfast body diode eliminateds the need for external diodes in ZVS applicantions; (2)lower gate charge results in simpler drive requirements; (3)enhanced dv/dt capabilities offer impr...
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
Mfg:IR Pack:TO-220 D/C:2009-4-5 Vendor:Other Category:Other
Mfg:IR Pack:TO-3 D/C:N/A Vendor:Other Category:Other
The HEXFET® technology IRFAG50 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...
Mfg:IR Pack:TO-204AA D/C:05+ Vendor:Other Category:Other
The HEXFET® technology IRFAG40 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...
Mfg:IR Pack:TO-3 D/C:02+ Vendor:Other Category:Other
The HEXFET® technology IRFAG30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...
Mfg:IRF Vendor:Other Category:Other
The HEXFET® technology IRFAF50 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very...
Mfg:IRF Vendor:Other Category:Other
Mfg:IR Pack:TO-204AA D/C:05+ Vendor:Other Category:Other
The HEXFET(C) technology IRFAF30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very l...
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
The HEXFET(C) technology IRFAE30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very lo...
Mfg:IR Pack:N/A D/C:N/A Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m...
Mfg:IR Pack:TO-204AA D/C:05+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors IRFAC40. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava...
Mfg:IR Pack:TO-3 D/C:00+ Vendor:Other Category:Other
The HEXFET(C) technology IRFAC30 is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low o...
Mfg:IR Pack:TO-263 D/C:09+ Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z34S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 19A D2PAKFifth Generation HEXFETs IRF9Z34NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9Z34NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 19A TO-220ABFifth Generation HEXFETs IRF9Z34N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z34L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRF9Z34, SiHF9Z34
Vendor:Other Category:Other
The IRF9Z34 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The...
Mfg:IR Pack:07+ Vendor:Other Category:Other
The HEXFET® technology IRF9Z30PbF is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resiste...
Mfg:IR Pack:TO-263 D/C:09+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9Z24NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 12A TO-220ABThe IRF9Z24NPBF is a HEXFET power MOSFET.Fifth generation HEXFEfs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with th...
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9Z24NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 12A TO-220ABFifth Generation HEXFETs IRF9Z24N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z24L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRF9Z24, SiHF9Z24
Vendor:Other Category:Other
The IRF9Z24 is a kind of power mosfets whose VDS=-60V, RDS(ON)=0.28, ID=-9.7A. If you want to know about this IC, please go to our website.
The features of IRF9Z24 can be summarized as (1)lower rosrom; (2)improved induc...
Vendor:Other Category:Other
Power MOSFET IRF9Z20, SiHF9Z20
Mfg:IR Pack:TO-263 D/C:09+ Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z14S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Third Generation HEXFETs IRF9Z14L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRF9Z14, SiHF9Z14
Vendor:Other Category:Other
Power MOSFET IRF9Z10, SiHF9Z10
Mfg:IR Pack:SMD Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9956 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Mfg:IR Pack:SMD Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9953 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Mfg:IR Pack:SMD Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9952 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET 2N-CH 20V 10A 8-SOIC
Mfg:IRF Pack:SOP8 D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
The IRF9640SPbF is designed as third generation HEXFET from international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effectiven...
Vendor:Other Category:Other
Power MOSFET
Vendor:Other Category:Other
Power MOSFET IRF9640, SiHF9640
Mfg:N/A D/C:TO-220 Vendor:Other Category:Other
These are P-Channel enhancement mode silicon-gate power field-effect transistors IRF9640. They are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche...
Vendor:Other Category:Other
Power MOSFET IRF9630S, SiHF9630S
Vendor:Other Category:Other
Power MOSFET IRF9630, SiHF9630
Mfg:IR Pack:TO-220 D/C:2006-4-5 0:00 Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors IRF9630. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc...
Vendor:Other Category:Other
Power MOSFET IRF9620S, SiHF9620S
Vendor:Other Category:Other
Power MOSFET IRF9620, SiHF9620
Vendor:Other Category:Other
Power MOSFET IRF9610S, SiHF9610S
Vendor:Other Category:Other
Power MOSFET IRF9610, SiHF9610
Vendor:Other Category:Other
Power MOSFET IRF9540S, SiHF9540S
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 23A D2PAKFeatures of this design are a 150 junction operating temperature IRF9540NSPbF, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliabl...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9540NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 23A TO-220ABThe IRF9540NPBF is a HEXFET power MOSFET.Fifth Generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with th...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9540NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 23A TO-220ABFifth Generation HEXFETs IRF9540N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRF9540, SiHF9540
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...
Vendor:Other Category:Other
The IRF9530SPbF is designed as the third generation HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti...
Vendor:Other Category:Other
Vendor:Other Category:Other
Power MOSFET IRF9530S, SiHF9530S
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9530NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9530NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 14A TO-220ABFifth Generation HEXFETs IRF9530N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Vendor:Other Category:Other
Power MOSFET IRF9530, SiHF9530
Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors IRF9530. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc...
Vendor:Other Category:Other
The IRF9520SPbF is deisgned as the third generational HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec...
Vendor:Other Category:Other
Power MOSFET IRF9520S, SiHF9520S
Vendor:Other Category:Other
The IRF9520S is one of the HEXFET power MOSFET series.Third generation HEXFETs from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and ...
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
Mfg:IR Pack:TO-262 D/C:5000 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 6.8A TO-262Fifth Generation HEXFETs IRF9520NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 100V 6.8A TO-220ABFifth Generation HEXFETs IRF9520N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRF9520, SiHF9520
Vendor:Other Category:Other
This advanced power MOSFET IRF9520 is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field ...
Vendor:Other Category:Other
Power MOSFET IRF9510S, SiHF9510S
Vendor:Other Category:Other
Power MOSFET IRF9510, SiHF9510
Mfg:IR Pack:TO-220 D/C:04+ Vendor:Other Category:Other
This P-Channel enhancement mode silicon gate power field effect transistor of the IRF9510 is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mo...
Mfg:IR Pack:SMD-8 Vendor:Other Category:Other
Fifth Generation HEXFETs IRF9410 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:Other Category:Other
Mfg:IR Pack:TO-3 D/C:04+ Vendor:Other Category:Other
The HEXFET technology IRF9240 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on...
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These devices IRF9233 are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown...
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These devices are P-Channel enhancement mode silicon gate power field effect transistors IRF9232. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown...
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These devices are P-Channel enhancement mode silicon gate power field effect transistors IRF9231. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown...
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