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Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CHAN 600V 16A D2PAK The IRG4BC20K-SPbF has 4 features.The first one is high short circuit rating optimized for motor control,tsc = 10s,@360V VCE(start),TJ = 125,VGE = 15V. The second one is combines low conduction losses with high swi...
Mfg:IR Pack:TO Vendor:Other Category:Other
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 16A D2PAK
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 16A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIODE 600V 16A D2PAK
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 16A D2PAK
Vendor:Other Category:Other
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 16A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A D2PAK The IRG4BC15UD-SPbF has the following features including UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching;IGBT Co-packaged with ultra-soft-recovery antiparallel diode;Industry standard D...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A TO220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A TO262 The IRG4BC15UD-LPbF has the following features including UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching;IGBT Co-packaged with ultra-soft-recovery antiparallel diode;Industry standard D...
Vendor:Other Category:Other
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 8.5A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CHAN 600V 14.0A TO220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A D2PAK
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A TO220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14.0A TO262
Vendor:Other Category:Other
Mfg:IR Pack:N/A D/C:6000 Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 14.0A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 14.0A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 9A TO220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 9.0A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 9.0A TO-220AB
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZS utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...
Mfg:1971 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 61A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this d...
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZL utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this desi...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 72A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ48VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 72A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ48V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ48S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RSPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching s...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RS utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed...
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RLPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching sp...
Mfg:IR Pack:TO-263 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RL utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed...
Vendor:Other Category:Other
Power MOSFET IRFZ48R, SiHFZ48R
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48R utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 64A D2PAK The IRFZ48NSPbF and IRFZ48NLPbF has 7 features.The first one is advanced process technology.The second one is surface mount (IRFZ48NS) .The third one is low-profile through-hole(IRFZ48NL) .The fourth one is 175 op...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 64A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 64A TO-220ABN-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The IRFZ48N features very low on-state resistance and has integral zener diodes giving ESD protect...
Mfg:IR Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ48L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRFZ48, SiHFZ48
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZSPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this ...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZS utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...
Mfg:IR Pack:TO-220 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this d...
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZL utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this desi...
Mfg:26521 Pack: I R Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ46S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 53A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...
Vendor:Other Category:Other
The IRFZ46NS is HEXFET power MOSFET.Advanced HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the...
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 53A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NPbF utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching s...
Mfg:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 53A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ46N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ46L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:Other Category:Other
Power MOSFET IRFZ46, SiHFZ46
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZSPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this ...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZS utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...
Mfg:IR Pack:TO-220 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this ...
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZL utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this desi...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 57A D2PAKSpecifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZSPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZS utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this des...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 57A TO-220ABSpecifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this ...
Vendor:Other Category:Other
Specifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZLPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this...
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZL utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this des...
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZ utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this desi...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 55A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching sp...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 55A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 55A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ44S/L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44RPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...
Vendor:Other Category:Other
Power MOSFET IRFZ44R, SiHFZ44R
Mfg:IR Pack:TO-220 D/C:04+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44R utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Vendor:Other Category:Other
The IRFZ44PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The IRFZ44PbF has six features...
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 49A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 49A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 48A D2PAKFifth Generation HEXFETs from International Rectifier IRFZ44ESPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ44ES utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Mfg:10000 Pack:IR D/C:TO-220 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 48A TO-220ABFifth Generation HEXFETs from International Rectifier IRFZ44EPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 48A TO-262Fifth Generation HEXFETs from International Rectifier IRFZ44ELPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...
Mfg:IR Pack:TO-262 D/C:06+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ44EL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ44E utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...
Vendor:Other Category:Other
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices IRFZ44CN are particularly well suited for bridge circuits where diode speed and commutatin...
Vendor:Other Category:Other
Power MOSFET IRFZ44, SiHFZ44
Mfg:ST Pack:TO-220F D/C:08+ Vendor:Other Category:Other
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